TO213AA
Abstract: Silicon Controlled Rectifiers S2700 S2700D S2700M S2700N TO-213AA ss270a
Contextual Info: G E SOLID STATE "5Ì 3875081 G E SOLID STATE D e J 3fl75Qfll 0017721 ? 01E 17721 D T-7S-I3 _ Silicon controlled Rectifiers File Number S2700D, S2700M, S2700N 1627 High Voltage, Medium Current Silicon Controlled Rectifiers TERMINAL DESIGNATIONS For Power Switching, Power Control
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dg177e1s2700ds2700ms2700n+892cs-277o-213aas2700ss270as1to213aasilicon controlled rectifiersto-213aass270a
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2N4991
Abstract: 2N4992 GE 2N4992 low voltage scr TRIAC 18007 unijunction application note silicon bilateral switch 2n4992
Contextual Info: G E SOLID STATE Dl 3875081 G E SOLID STATE DE|3fl75Qfll DDlflOD? 1 | ~ 01E 18007 D I - ^ 5 - 6 ? -Unijunction Transistors and Switches 2N4991, 2N4992 Silicon Bilateral Switch
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2n49912n4992120fia2cs-4235c+62cs-423sge 2n4992low voltage scrtriac 18007unijunction application notesilicon bilateral switch 2n4992
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RCA 815
Abstract: RUR820 RUR815 RUR-810 RUR-815 RUR-820 TA9223A TA9223B TA9223C 8A 820
Contextual Info: G E SOLID STATE 01 3875081 G E SOLID STATE Ultra-Fast-Recovery Rectifiers - DE I 3fl75Qfll □D17b4S 01E 1764 5 . , •- ■ RUR-810, RUR-815, RUR-820 | D T ~ 0*3-17 . . . . File Number 1355 8-A , H ig h Sp e e d , H ig h E fficie n cy Epitaxial Silicon Rectifiers
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rur-810rur-815rur-820cs-39566+9o-220actci-1411rca 815rur820rur815ta9223ata9223bta9223c8a 820
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RCA-2N6050
Abstract: n6050 2N60S
Contextual Info: 3875081 6 E SOLID STATE Ql DE | 3fl?SDfil □□17E3Q □ 1~ T~ 3 3 - ?3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic
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17e3q2n60502n60512n6052+72n60572n60582n605912-ampererca-2n6050n60502n60s
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74hc08
Contextual Info: D E | 3Û7SDÛ1 0011451 7 | E SOLI» STATE Gl G Technical Data CD54/74HC08 CD54/74HCT08 F ile N u m b e r 1549 High-Speed CMOS Logic Quad 2-Input AND Gate Type Features: • Buffered inputs ■ Typical CD54/74HC08 propagation delay= 7 ns @ Vcc=5 V, C l= 15 pF, Ta= 2 5 °C
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cd54/74hc08cd54/74hct08rca-cd54/74hc0854hct/74hct+554ls/74lscd54hc08cd54hct0854/74hc74hc08
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IS-953
Abstract: GEPS2001
Contextual Info: E SOLI» STATE 01 Optoelectronic Specifications DE § 3 0 7 5 0 0 1 DOnflSfl 0 T ^ J -S3 K' Photon Coupled Isolator GEPS2001 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State GEPS2001 is a gallium arsenide, infrared emit ting diode coupled with a silicon phototransistor in a dual-in-line
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geps200133mw/e518683fl75d+2fll-100is-953
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