3FF40 Search Results

3FF40

Abstract: diode 600v 3FF30 3FF50 3FF60
Contextual Info: RECTIFIER, up to 600V, 3.4A, 50ns January 7, 1998 1997 SEMTECH CORP. 3FF30 3FF50 3FF40 3FF60 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com 652 MITCHELL ROAD NEWBURY PARK CA 91320 RECTIFIER, up to 600V, 3.4A, 50ns 3FF30 3FF50 3FF40 3FF60 January 7, 1998

Contextual Info: RECTIFIER, up to 600V, 3.4A, 50ns January 7, 1998 3FF30 3FF50 3FF40 3FF60 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com A X IA L LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE Q UICK REFERENCE DATA • Very low reverse recovery time

Contextual Info: RECTIFIER, up to 600V, 3.4A, 50ns January 7, 1998 3FF30 3FF50 3FF40 3FF60 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com A X IA L LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE Q UICK REFERENCE DATA • Very low reverse recovery time

AT26DF321

Abstract: 16-SOIC
Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 66 MHz Maximum Clock Frequency • Flexible, Uniform Erase Architecture • • • • • • • • • – 4-Kbyte Blocks – 32-Kbyte Blocks

AT25DF321

Abstract: AT26DF321 16-SOIC AT25DF321A
Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 66 MHz Maximum Clock Frequency • Flexible, Uniform Erase Architecture • • • • • • • • • • – 4-Kbyte Blocks – 32-Kbyte Blocks

pc28f00ap33

Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
Contextual Info: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: „ TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer

AT26DF321

Abstract: AT25DF321 DATASHEET AT25DF321 26df 16-SOIC
Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 66 MHz Maximum Clock Frequency • Flexible, Uniform Erase Architecture • • • • • • • • • • – 4-Kbyte Blocks – 32-Kbyte Blocks

5d 3kv

Abstract: equivalent components of diode 1N4249 Semtech alpac alpac scba2 SCPA2 single phase half controlled full wave bridge rec semtech kv-pac SI96-01 2PFT2 SCBAR4F
Contextual Info: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage

j001 1003

Abstract: 74LS00 TTL Signetics 2650 VCU 2136 j001 1003 ic signetics hand book signetics 2650 8k ram ic j001 1003 strz 2026 pss 3056
Contextual Info: > l b l IC I I V » 2650 flllCROPROCEftOR CONTENTS I IN T R O D U C T IO N IN T R O D U C IN G T H E 26 50 F A M I L Y . 3 F E A T U R E S OF T H E 26 50 F A M IL Y 4 4 Microprocessor F e a tu re s .

Contextual Info: 512Mb, 1Gb, 2Gb: P33-65nm Features Micron Parallel NOR Flash Embedded Memory P33-65nm JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA, JS28F00AP33TFA, JS28F00AP33EFA PC28F00AP33BFA, PC28F00AP33TFA, PC28F00AP33EFA,

pc28f00ap30

Abstract: JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF
Contextual Info: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode

TSOP 48 pin flash gbit

Abstract: JS28F00AP33BF 1FFC000
Contextual Info: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features  High performance:  TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer

AT25DF321A

Abstract: AT25DF321a DATASHEET AT25DF321 spi In Circuit Serial Programming at25df321 16-SOIC atmel at25
Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 70 MHz Maximum Clock Frequency • Flexible, Uniform Erase Architecture • • • • • • • • • • – 4-Kbyte Blocks – 32-Kbyte Blocks

pc28f00ap30

Abstract: JS28F512P30 PC28F00AP30TF PC28F00AP30EF PC28F512P30 JS28F512 PC28F512P30TF JS28F512P30BF pc28f00ap30bf PC28F00BP30
Contextual Info: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode

3eb000h

Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 66 MHz Maximum Clock Frequency • Flexible, Uniform Erase Architecture • • • • • • • • • • – 4-Kbyte Blocks – 32-Kbyte Blocks

PC28F00AP33BF

Abstract: L 1123 1FF4000
Contextual Info: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit, 1-Gbit Monolithic Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read

Contextual Info: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read

as15f

Abstract: L-12-OV-5 LAS1605 pac010 AS-15f LAS14AU F25KS 2PFT05 E82A LAS6321P
Contextual Info: TEL: 805-498-2111 FAX : 805-498-3804 Part Num ber V rw m I f a v » Trr Q u a lifie d To EZ1082 . EZ1083 . P age . 4 . . P a rt Num ber V rw m L A S -1505 . I f (a v Trr Q u a lifie d To P age P art N u m be r U S -6 3 2 0 P VflW M

Contextual Info: AT25DQ321 32-Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual-I/O and Quad-I/O Support DATASHEET Features Not Recommended for New Designs  Single 2.7V - 3.6V supply  Serial Peripheral Interface (SPI) compatible     Supports SPI Modes 0 and 3

AT25DQ321

Abstract: AT25DQ
Contextual Info: Atmel AT25DQ321 32Mb, 2.7V Minimum SPI Serial Flash Memory with Dual-I/O and Quad-I/O Support PRELIMINARY DATASHEET Features  Single 2.7V - 3.6V supply  Serial Peripheral Interface SPI compatible     Supports SPI Modes 0 and 3 Supports Atmel RapidS operation

JS28F512P33BF

Abstract: JS28F512 pc28f00ap33 PC28F00AP33BF truth table NOT gate 74 JS28F512P33TF PC28F00AP33TF JS28F512P33EF PC28F00BP33EF JS28F00AP33BF
Contextual Info: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read

ST2202

Abstract: STN LCD controller 160x160 grayscale transistor Bc 82 160X160 display st2202a
Contextual Info: ST ST2202A 8 BIT Integrated Microcontroller with 256K Bytes ROM Notice: Sitronix Technology Corp. reserves the right to change the contents in this document without prior notice. This is not a final specification. Some parameters are subject to change. 1. FEATURES

Contextual Info: 512Mb, 1Gb, 2Gb: P33-65nm Features Micron Parallel NOR Flash Embedded Memory P33-65nm JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA, JS28F00AP33TFA, JS28F00AP33EFA PC28F00AP33BFA, PC28F00AP33TFA, PC28F00AP33EFA,

2PFT2

Abstract: 2PFT15 2PFT05 1N6073 1N6079 1N6081 5FF05 5FF10 5FF15 FF05
Contextual Info: SEP1TECH CORP 3HE D 013^13^ 0 0 0 22 8 ^ QSb « S E T AXIAL LEADED DISCRETE RECTIFIERS T-O V JS A B S O L U T E MAXIMUM RATINGS @25°C U N LES S OTHERW ISE SPECIFIED Device Type Reverse Voltage V rwm Forward Current @55°C VRAM Reverse Rec­ overy Time Trr