3F SOT Search Results

857-B

Abstract: BC857A BC857B BC857C
Contextual Info: BC857A / BC857B / BC857C BC857A BC857B BC857C C E B SOT-23 Mark: 3E / 3F / 3G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings*

3D smd marking

Abstract: SMD Transistors 3f SMD IC ts 4141 BC856BW SOT SMD IC BC856W-BC858W BC856AW BC856W BC857AW BC857BW
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G

BC856BW

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G

BC847B

Abstract: BC857B BC857B 3F
Contextual Info: BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking BC857B 3F SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847B • ■ ■ ■

pnp 3223

Abstract: BC857A
Contextual Info: BC857A / BC857B / BC857C BC857A BC857B BC857C C E SOT-23 B Mark: 3E / 3F / 3G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings*

BC857B

Abstract: BC847B BC857C
Contextual Info: BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BC857B 3F SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847B

BC857B

Abstract: MARKING 3F BC847B
Contextual Info: BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BC857B 3F SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847B

BC857BT

Contextual Info: BC857AT/BT/CT SOT-523 Transistor PNP SOT-523 1. BASE 2. EMITTER 3. COLLECTOR Features — — Ideally suited for automatic insertion For Switching and AF Amplifier Applications MARKING: BC857AT=3E; BC857BT=3F; BC857CT=3G Dimensions in inches and (millimeters)

BC857C

Abstract: BC857A BC857B BC857B PNP
Contextual Info: BC857A / BC857B / BC857C BC857A BC857B BC857C C E B SOT-23 Mark: 3E / 3F / 3G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings*

Contextual Info: BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • Type Marking BC857B 3F SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847B s t c u

BC857C

Abstract: BC857A BC857B 3GPNP BC857B sot23
Contextual Info: BC857A BC857B BC857C C E SOT-23 B Mark: 3E / 3F / 3G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

vh marking sc70

Abstract: surface mount diode 3F MARKING 3F
Contextual Info: RB450F Diode, Schottky barrier, surface mount These mold-type diodes are suitable for high density surface mounting on printed circuit boards. Dimensions Units : mm 2 0±0 2 Ö +l CO Features • available in UMD3 (UMD, SC-70, SOT-323) package • part marking, 3F

bc860

Abstract: bc858 BC857 BC857A BC857B BC858A BC858B BC859A BC859B BC860A
Contextual Info: BC857/BC858 BC859/BC860 SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857A 3E BC857B 3F BC858A 3J BC858B 3K BC859A 4A BC859B 4B BC860A 4E BC860B 4F SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING

bc857b

Abstract: BC857C BC857C sot23
Contextual Info: BC857B BC857C SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857B 3F BC857C 3G SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS LOW CURRENT SWITCHING AND GENERAL PURPOSE APPLICATIONS THE NPN COMPLEMENTARY TYPES ARE

MMBT3960

Abstract: MMBT3960A MMBT4260 MMBT6543 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 MMBC1321Q2
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued SOT-23 Transistors, VHF/UHF Amplifiers, Mixers, Oscillators P inout: 1-Base, 2 -E m itte r, 3 -C o lle c to r NPN 'T Device c ob Max (pF) Marking Min (GHz @ 'c (mA) v BR(CEO) 1T 15 3F 3E Q2 Q3 Q4 Q5 3B 3A F1 F2

BC857A

Contextual Info: SOT23 PNP SILICON PLANAR GENERAL PURPOSE T R A N SIST O R S BC856 BC858 BC860 IS S U E 6 - APRIL 1997 PARTM ARKING DETAILS C O M PLEM EN TAR Y TYPES BC856A-3A BC858C-3L BC856 BC846 BC856B-Z3B BC859A-Z4A BC857 BC847 BC857A-Z3E BC859B-4B BC858 BC848 BC857B-3F

RB450F

Contextual Info: RB450F Diodes Schottky barrier diode RB450F !External dimensions Units : mm 2.0±0.2 0.9±0.1 1.3±0.1 2.1±0.1 0.65 1.25±0.1 0.65 !Features 1) Small surface mounting type. (UMD3) 2) Low IR. (IR=80nA Typ.) 3) High reliability. 0.3 0~0.1 0.15±0.05 3F 0.3±0.1

BC857B UNI

Abstract: BC847 BC857 BC857A BC857B BC858 BC858A BC858B
Contextual Info: BC857 BC858 SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857A 3E BC857B 3F BC858A 3J BC858B 3K 2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS VERY LOW NOISE AF AMPLIFIER NPN COMPLEMENTS FOR BC857 IS BC847

RB450F

Contextual Info: RB450F Diodes Schottky barrier diode RB450F !External dimensions Units : mm 2.0±0.2 0.9±0.1 1.3±0.1 2.1±0.1 0.65 1.25±0.1 0.65 !Features 1) Small surface mounting type. (UMD3) 2) Low IR. (IR=80nA Typ.) 3) High reliability. 0.3 0~0.1 0.15±0.05 3F 0.3±0.1

EZ5Z3-S3.3

Contextual Info: g ßny/i hri =3f^fì=n 1A 5V to 3.0, 3.3, ADJ EZ DROPPER EZ5Z3 SERIES TEL: 805-498-2111 ABSOLUTE MAXIMUM RATINGS FEATURES • • • • • • • FAX : 805-498-3804 External components not required Heatsink not required 2 simple connections 1A output current

c857

Abstract: TRA BC857 KH SOT23
Contextual Info: r Z 7 SGS-THOMSON Ä T # Kffloeœiniera «® BC857 BC858 SMALL SIGNAL PNP TRANSISTORS Type M a rk in g B C 8 57 A 3E B C 857B 3F B C 8 58 A 3J B C 858B 3K . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING

Contextual Info: r r z SGS-THOM SON Ä T f M liœ m s e îli» !» BC857/BC858 BC859/BC860 SMALL SIGNAL PNP TRANSISTORS Type M arking BC857A 3E BC857B 3F BC858A 3J BC858B 3K BC859A 4A BC859B 4B BC860A 4E BC860B 4F • SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR

Contextual Info: rz7 Ä T# SGS-m0MS0N bcs57 r a o e œ iiL iie r a * ® BC858 SMALL SIGNAL PNP TRANSISTORS Type M a rk in g B C 8 57 A 3E B C 857B 3F B C 8 58 A 3J B C 858B 3K . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING

BFT92

Abstract: BFR92 BFR92A 727 Transistor power values BFT92V
Contextual Info: 11 N AMER P H IL IP S /D IS C R E T E 2SE D b b S B ^ l O O lö lb ? S BFT92 T-3f-J7 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistor in a microminiature plastic envelope. It is primarily intended for use in u.h.f. and microwave amplifiers in thick and thin-film circuits, such as in aerial amplifiers, radar systems,