3DXXX Search Results

W39L020

Contextual Info: W39L020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide × 8 data appears on DQ7 − DQ0.

2Axxx

Contextual Info: W39L020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide × 8 data appears on DQ7−DQ0.

AT49BV004

Abstract: AT49BV004T AT49BV4096A AT49BV4096AT ut000 4096A
Contextual Info: Features • • • • • • • • • • 2.7V to 3.6V Read/Write Operation Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks

AT49F4096A

Abstract: AT49F4096AT AT49F004 AT49F004T 4096A
Contextual Info: Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Programming Fast Read Access Time - 55 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks

AT49F004

Abstract: AT49F004T AT49F4096A AT49F4096AT 4096A
Contextual Info: Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Programming Fast Read Access Time - 55 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks

1690H

Abstract: 79XXX 4096A 3DXXX
Contextual Info: Features * * * * * * * * * * 2.7V to 3.6V Read/Write Operation Fast Read Access Time -120 ns Internal Erase/Program Control Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks - One 240K Words (480K bytes) Main Memory Array Block

49F004

Abstract: 49f004t 4096A
Contextual Info: Features * Single Voltage Operation - 5V Read - 5V Programming * Fast Read Access Time - 55 ns * Internal Erase/Program Control * Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks

tpec

Abstract: XX555 W49L401 W49L401T
Contextual Info: W49L401 T 256K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49L401(T) is a 4-megabit, 3.3-volt only CMOS flash memory organized as 256K × 16 bits. The device can be programmed and erased in-system with a standard 3.3-volt power supply. A 12-volt VPP

18XXXh

Contextual Info: W39L020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide × 8 data appears on DQ7 − DQ0.

W39L020

Contextual Info: W39L020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide × 8 data appears on DQ7 − DQ0.

W49L401

Abstract: W49L401T
Contextual Info: W49L401 T 256K x 16 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W49L401(T) is a 4-megabit, 3.3-volt only CMOS flash memory organized as 256K × 16 bits. The device can be programmed and erased in-system with a standard 3.3-volt power supply. A 12-volt VPP

18xx

Abstract: Ortec 20XXXh 39xx W39L020-90 3axxx
Contextual Info: W39L020 Data Sheet 256K x 8 CMOS FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3

Contextual Info: Features • • • • • • • • • • ¿lmËL 2.7V to 3.6V Read/Write Operation Fast Read Access Time -120 ns Internal Erase/Program Control Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks

Contextual Info: Features ¿lmËL • Single Voltage Operation - 5V Read - 5V Programming • Fast Read Access Time - 55 ns • Internal Erase/Program Control • Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks