MTPSP25
Contextual Info: MOTOROLA SC ÎXSTRS/R F> bôE • b3b?2SM 0 m a b 7 e1 S 4 3 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP5P25 Advance Information P o w er Field E ffe c t T ran sisto r P-Channel Enhancement-Mode Silicon Gate If This TMOS Power FET is designed for medium voltage,
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mtp5p25y145mand-02314b03+1mtpsp25
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MTP 5P25
Abstract: 221A-06 AN569 MTP5P25 TMOS Power FET AN569 in Motorola Power Applications
Contextual Info: MOTOROLA SC Î X S T R S / R F> bôE • b 3b ?2SM a m a b ? ei 543 MOTOROLA ■ SEM IC O N D U C T O R TECHNICAL DATA MTP5P25 Advance Information P o w e r Field E ffe c t T ra n sisto r P-Channel Enhancement-Mode Silicon Gate T M O S POWER FET 5 AM PERES
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mtp5p25b3b7s54mtp 5p25221a-06+3an569tmos power fetan569 in motorola power applications
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X 25 UMI 2.5A 150
Abstract: N and P MOSFET
Contextual Info: b ÔE T> MOTOROLA SC XSTRS/R F • b3b?E54 OOSflSlT llfl ■ MOTb MOTOROLA mm SEMICONDUCTOR TECHNICAL DATA MTD6N15 Designer's Data Sheet P o w er Field E ffe c t T ransistor N-Channel Enhancement-Mode Silicon Gate DPAK for Surface Mount or Insertion Mount
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mtd6n15b3b7254x 25 umi 2.5a 150n and p mosfet |
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mps3904
Abstract: MPS3903 MPS3904 transistor To92 transistor
Contextual Info: MOTOROLA SC 1EE D XSTRS/R F I ti3ti7aSM Symbol Rating Unit Value VCEO - 40 Vdc Collector-Base Voltage VcBO 60 ' Vdc Emitter-Base Voltage Vebo 6.0 Vdc Collector Current — Continuous ic 100 mAdc Total Device Dissipation @ T a = 25°C Derate above 25°C Pd
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mps3903mps3904o-226aamps3904 transistor+1to92 transistor
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MRF2010
Abstract: MRF2005 MRF201 RF2005 Z623 MRF2003
Contextual Info: 12E D I b3fc,?2S4 0000044 S | T M O T OR O LA SC ' 3 3 - l l XSTRS/R F MOTOROLA SEMICONDUCTOR MRF2010 MRF2010B TECHNICAL DATA The R F Line 10W 2 GHz MICROWAVE POWER TRANSISTORS NPN SILICON MICROWAVE POWER TRANSISTORS NPN S IL IC O N % , . designed fo r Class B and C am p lifie r o r oscillator applications
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mrf2010mrf2010b3b75smt-33-j/+5mrf2005mrf201rf2005z623mrf2003
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