3B7255 Search Results

r04c

Abstract: 1N3909 1N3910 1N3911 1N3912 1N3913 1N4723 MR1396 1N4Q01 43fl
Contextual Info: MOTOROLA SC DIODES/OPTO bHE L,3b7255 00flt,23L, 75*1 D 1N3909 thru 1N3913 MR1396 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N3911 and M R1396 are Motorola Preferred Devices Designers Data Sheet FAST R E C O V E R Y POWER R E C T IF IE R S S TU D M O U N T E D

MCR202

Abstract: mcr204 MCR203 MCR206
Contextual Info: MOTOROLA SC DIODÉS/ÔPTO 25E D t.3b7255 OOÖ1137 2 • •r-^ s'-// MCR202 thru MCR206 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Annular PNPN devices designed for industrial/military applications such as relay and lamp drivers, small motor controllers and drivers for larger thyristors, and in

MRF8003

Contextual Info: ^34 MOTOROLA SC -CDIODES/OPTO} 6 3 6 7 2 5 5 M O T O R O L A SC DE |t.3b7255 00300=17 <D I O D E S / O P T O 34C 38 0 9 7 D T~3t~i2 SILICON RF TRANSISTOR DICE continued) MRFC8003 DIE NO. — NPN LINE SOURCE — RF502.147 lü This die provides performance equal to or better than that of

ur420

Abstract: MUR430 MUR405 MUR410 MUR415 MUR420 MUR440 MUR450 MUR460 JVR 0.7
Contextual Info: MOTOROLA SC D I O D E S / O P T O t>3b7255 QOfibHb? Ib4 L.4E D MUR405 MUR410 MUR415 MUR420 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MUR430 MUR440 MUR450 MUR460 MUR420, MUR440 and MUR460 are Motorola Preferred Devices •— w -ULTRAFAST RECTIFIERS

2N3640

Abstract: MPS4258 2N5228 2n3639 MPS3640 2n4208 2N4209 2N36 2N4209 die transistor 2N3640
Contextual Info: MOTORO LA SC {D IO DES/ OPT O} 6367255 MOTOROLA 34 SC DE | L.3b7255 0Q3Ô QD7 5 | ~ CDIODES/OPTO 34C 3800 7 D T~ 3 7 “/ST SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) MMC4209 DIE NO. — PNP LINE SOURCE — DSL345 f4 This die provides performance similar to that of the following device types:

Contextual Info: M O TO RO LA SC D I O D E S / O P T O I M0T7 L.3b7255 0 0 0 7 3^ 5 G3S bflE » Order this data sheet by BAV199LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information D ual S e rie s S w itc h in g D iode BAV199LT1 Motorola Preferred Device This switching diode has the following features:

2N6094

Contextual Info: MOTOROLA ! SC {DIODES/OPTO} 6367255 MOTOROLA SC 3M D ET|t.3b7255 DIODES/OPTO 34C 0030073 38073 SILICON RF TRANSISTOR DICE (continued) 7 T *- ? ? - W 2C6094 DIE NO. — PNP LINE SOURCE — RF605.323 This die provides performance equal to or better than that of

Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5211DW1T1 SERIES Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a

MCR264-12

Abstract: photo thyristor MCR264-2 MCR264-10 MCR264-3 MCR264-4 MCR264-6 MCR264-8 MCR264 motorola opto scr
Contextual Info: "□1 MOTOROLA SC iD IO DES/OPTO} ÏF|h3h7ESS 0071174 T T - * - s r - t 7 M C R 264-2 thru T h y risto rs M C R 26 4-12 Silico n Controlled Rectifiers . . . designed for back-to-back SCR output devices for solid state relays or applica­ tions requiring high surge operation.

T6411M

Abstract: T6411D
Contextual Info: HÌ M O T O R O L A SC -CDIODES/OPTOJ 6367255 MOT OR OL A SC DIODES/OPTO t.3L,7E5S OGT^aSS T | ~ OtE 79255 T riacs Silico n Bidirectional Triode Thyristors . . . designed prim arily fo r industrial and m ilitary applications fo r full w ave control o f ac loads in applications such as light dim m ers, pow er supplies, heating controls,

Contextual Info: MOTOROLA Order this document by MMBV3102LT1/D SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 S ilic o n Tuning D iode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical

MAC3060-4

Abstract: MAC3060/D
Contextual Info: MOTOROLA SC DIODES/OPTO 0 e! D • TRIACs (□3b7255 007723b b ■ t - 25-/5 - Chipscrete Subassemblies Optically Isolated Triac Driver/Triac Combinations This series of Triac Drivers consists of infrared LEDs op­ tically coupled to photodetectors with Triac output. 7500 V

MV2107

Abstract: MV2105* equivalent MMBV2109LT1 equivalent 4j diode MV2113 diode mv2105 MMBV2101LT1 MMBV2104 MV2103 MMBV2103LT1
Contextual Info: SILICON EPICAP DIODES . designed in the popular PLASTIC PA C KAG E for high volum e require­ ments of F M Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods.

MR818 diode

Abstract: Diode MR810 MR818 diodes IN4723 MR818 equivalent MR814 MR810 MR816 MR812 MRB17
Contextual Info: MOTOROLA SC -CDIODES/ÔPTO} 1 EE D I b 3 b ? 2 SS O t m T C ia T | - — ÎT-03-/3 MR810 thru MR814 MR816 thru MR818 MOTOROLA SEMICONDUCTOR TECHNICAL DATA l osi«Ti M‘s I)n(n Sheol FAST RECOVERY POWER RECTIFIERS SUBMINIATURE SIZE, A XIA L LEAD MOUNTED

BT4401LT1

Abstract: bt4401
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Sw itching Transistor MMBT4401LT1 NPN Silicon COLLECTOR Motorola Preferred Device 3 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit v CEO 40 Vdc C ollector-Base Voltage VCBO 60 Vdc E m itter-Base Voltage vebo 6.0 Vdc

DD201

Abstract: 74HC374 Logic Package Information
Contextual Info: MOTOROLA SC LOGIC SEE MOTOROLA J> fc»3b7255 0 0 0 0 3 ^ 3 wm SEMICONDUCTOR 40fl IH0T4 'T -q t-o 7-11 TECHNICAL DATA MC54/74HC374 Octal 3-S tate Noninverting D Flip-Flop J SUFFIX CERAMIC CASE 732-03 |f High-Performance Silicon-Gate CMOS The MC54/74HC374 is identical in pinout to the LS374. The device inputs are

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA B ias R esistor Transistor M UN 2211T1 S E R IE S NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network M otorola Preferred D e vices This new series of digital transistors is designed to replace a single device and its

T6411D

Abstract: T6411M T6421N T6421 T6421M T6421B T6411B T6421D T6401B WT6401
Contextual Info: ~ol MOTOROLA SC iDIODES/OPTO} 6367255 MOTOROLA SC DIODES/OPTO DE | b3t75SS 007^255 T (~~ 0 tE 79255 T ria c s Silico n Bidirectional Triode Thyristors . designed primarily for industrial and military applications for full wave control of ac loads in applications such as light dimmers, power supplies, heating controls,

74HC03

Contextual Info: MOTOROLA SC LOGIC MOTOROLA • I SEE D b3b?SSS DOfiflOTi »nom SEMICONDUCTOR TECHNICAL DATA MC54/74HC03 Quad 2 -In p u t N A N D G ate w ith O pen-Drain O utputs J SUFFIX CERAMIC CASE 632-08 High-Performance Silicon-Gate C M O S The MC54/74HC03 is identical in pinout to the LS03. The device inputs are com­

b2535

Abstract: b2545 b2535 diode U4T DIODE Motorola b2545 2535c B2545 M BR2545CT
Contextual Info: MOTOROLA Order this document by MBR2535CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Pow er R ectifiers MBR2535CT MBR2545CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:

M 14606

Abstract: BZV55C6V1 MLL5221B mlu714 BZV55C4V3
Contextual Info: MOTOROLA sc DIODES/OPTO b4E » • b3L7ESS 00 8 54 37 S3T SECTION 4.2.4 DATA SHEETS ZËNER VOLTAGE REGULATOR DIODES — continued Section 4 .2 A 2 Surface Mounted — continued SECTION 4.2A 2.2 500 mW LEADLESS (DO-34 BODY SIZE) MULTIPLE PACKAGE QUANTITY (MPQ)

Contextual Info: M O TO RO LA Order this document by MBR20200CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Dual Schottky Rectifier MBR20200CT . . . using Schottky Barrier technology with a platinum barrier metal. This state-of-the-art device is designed for use in high frequency switching power

2N6169

Abstract: 2n6168 2N6170 2N6167 MOTOROLA 2N6170
Contextual Info: MOTOROLA SC D IO D E S / O P T O 3 TE D ES b 3 b 7 S S S □0 fl2 bcm b H IM O T 7 T '- IG 'i g 2 N 6167 thru S ilic o n C o n tro lle d R e ctifiers 2 N 6170 Reverse B l o c k i n g Triode T h yr is to r s . . . designed for industrial and consumer applications such as power supplies;