3B SOT 23 Search Results

sot-23 Marking 3D

Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
Contextual Info: PNP General Purpose Transistor: BC856/857/858 Features: t
Low current max.100mA t
Low voltage (max.65v) Applications: t
SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L

Marking Code 2X

Contextual Info: MMBT4401 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT4403 • ESD Capability: Machine Model, C (> 400 V) Human Body Model, 3B ( > 8 kV ) MECHANICAL DATA • Case: SOT-23 Plastic

MMBT3960

Abstract: MMBT3960A MMBT4260 MMBT6543 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 MMBC1321Q2
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued SOT-23 Transistors, VHF/UHF Amplifiers, Mixers, Oscillators P inout: 1-Base, 2 -E m itte r, 3 -C o lle c to r NPN 'T Device c ob Max (pF) Marking Min (GHz @ 'c (mA) v BR(CEO) 1T 15 3F 3E Q2 Q3 Q4 Q5 3B 3A F1 F2

SMD TRANSISTOR MARKING 3B

Abstract: cmbt918
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER

SMD TRANSISTOR MARKING 3B

Abstract: cmbt918 transistor smd marking JT
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE

BC856

Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E

ts 4141 TRANSISTOR smd

Abstract: CMBT918 transistor marking SA p sot-23 c120 equivalent SMD TRANSISTOR MARKING 3B
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/ UHF TRANSISTOR N–P–N transisto r Marking CMBT918 = 3B Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS

Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

PN918

Abstract: MMBT918 mark 3b RF TRANSISTOR SOT23 5 P431 PN918 transistor
Contextual Info: MMBT918 PN918 C E C B TO-92 SOT-23 E B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings* Symbol

y 331 Transistor

Contextual Info: PN918 / MMBT918 MMBT918 PN918 C C B E TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

mmbt918

Abstract: PN918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch
Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

Contextual Info: Discrete POWER & Signal Technologies S iM IC D N P U C T O B MMBT918 PN918 C < \' TO-92 SOT-23 BE B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.

MMBT918

Contextual Info: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PN918 MMBT918 TO-92 SOT-23 Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.

DG40B

Abstract: DY TRANSISTOR PN918
Contextual Info: u c t or" PN918 C MMBT918 TO-92 SOT-23 B M ark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. A b s o lu t e M a x im u m R

MMBD501

Abstract: MMBD201 marking a2x sot23 MMBD201 4s MBAV70 5c 70 marking A7x marking 5AX a1x sot23 MBAW56
Contextual Info: MOTOROLA SC DIODES/OPTO 1â D SOT-23 DIODES • -W — STYLE 12 t.3b?aSS G G 7 A b E b — STYLE 9 STYLE 11 2 0 - \4— 3 0 - 3I 02 2 y- |4~-00 1 P | -3 0 -H - O0 22 01 SINGLE COMMON CATHODE A 3 SERIES

AC 187 npn transistor TO 1

Abstract: MMBT918 PN918
Contextual Info: u c t o r " PN918 C MMBT918 TO-92 SOT-23 B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. A b s o lu t e M a x im u m R

TO-236AB

Abstract: SC-7 TRANSISTOR Outlines transistor sot to236ab LH 036
Contextual Info: PACKAGE OUTLINES PLASTIC SOT PACKAGE DESIGNATOR LH Dimensions in Millimeters 3.10 2.90 0.50 0.30 2.10 1.85 0.20 0.127 3 1 2 3.00 2.70 0.25 MIN 0.55 0° TO 8° REF 0.95 BSC 1.10 0.90 1.25 0.90 0.15 0.00 Dwg. MA-010-3B mm 0.70 3 1.00 fits SC-59A solder-pad layout

BC557 sot package sot-23

Abstract: BC557 sot-23 BC558 SOT-23 BC556 sot package sot-23 MARKING 3B SOT23-6 bc557 package sot23 SOT-23 MARKING 50k BC557 sot package PK pnp transistor sot 23 transistor BC559
Contextual Info: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO

BC557 sot-23

Abstract: 3f SOT-23 BC557 sot package sot-23 transistor BC559 3F SOT23-3 BC856 BC856A BC856ALT1 BC857 BC857B
Contextual Info: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO

Contextual Info: BZM55C Series Zener diode Features 1. Saving space 2. Fits onto SOD 323/SOT 23 footprints 3. Micro Melf package Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol