3A900 Search Results

Contextual Info: 3A900FS Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)50 V(RRM)(V) Rep.Pk.Rev. Voltage900 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)25

Contextual Info: VI Tif PCB l a y o u t , component s i de AM hol es 3 & _ V i fi fiJ fi fi i (i fi fiJ fi fi $U— A ¥ i— ;1 • ~> i _ _ ,_ \mi \s LT 03 X a m A ' 1_ / 7, 4 1st contact Mi n. 4,1 1) So l d e r p i n s f o r PCB c o n n e c t i o n s 01 ±0.1 a c c o r d i n g to IEC 60 326-3

Contextual Info: 12,45 Max. 10,5 + 0,9 Max. 10,5 [ ] nr LT> ao PCB l a y o u t , component s i d e pf _ 1_ A l I hol es - 1-Max. 5,2 2,6 M wr y CO CO 18 506 X o 1 4, — in 1st 1 1 So l d e r p i ns f o r PCB c o n n e c t i o n s 01 ±0,1 a c c o r d i n g to IEC 60 326-3

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

7be0

Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

M29EWL

Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F00am29

Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F512M29EWL

Abstract: JS28F00AM29EWH JS28F256M29EWL JS28F512m29ewh JS28F00am29 pc28f512m29ewh JS28F256M29EWH JESD-47 PC28F00AM29EWH 28F256M29EW
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

Contextual Info: nr PCB l a y o u t , component si d e Al I hol es 1 So l d e r p i n s f o r PCB c o n n e c t i o n s 01 ±0,1 a c c o r d i n g to IEC 60 326-3 Dot. 09 19 510 7922 3 A ,5 09 19 510 6922 2 A ,5 Detail. 2 5 / 0 A / 0 2 09 19 510 5922 A ,5 Insp. 09 19 510

transistor a950

Abstract: A950 a970 transistor a950 o transistor a950 transistor datasheet AM51A C176 CXD3029R KA2 DIODE
Contextual Info: CXD3029R CD Digital Signal Processor with Built-in Digital Servo + Shock-proof Memory Controller + Digital High & Bass Boost Description The CXD3029R is a digital signal processor LSI for CD players. This LSI incorporates a digital servo, high & bass boost, shock-proof memory controller, 1-bit DAC and

JS28F512

Abstract: JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F512M29

Abstract: M29AWH PC28F512M29AWHB pc28f00am29 Micron 512MB NOR FLASH 8bit data PC28F00AM29AWLB PC28F512M PC28F512 JS28F512 M29A
Contextual Info: Preliminary‡ 1Gb, 512Mb: x8, x16 3V Supply NOR Flash Memory Features Micron 3V Supply NOR Flash Memory M29AW – 1Gb, 512Mb x8/x16, Uniform Block Features • Blank check to verify an erased block • VPP/WP# pin protection – Protects first or last block regardless of block protection settings

Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit x8 / x16, page, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F256m

Abstract: js28f256m29 JS28F512 256M29EWH
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers