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    3A600 Search Results

    3A600 Datasheets (1)

    RPM Micro
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    3A600
    RPM Micro 3.0A Iout, 600V Vrrm General Purpose Silicon Rectifier Scan PDF 47.84KB 1
    SF Impression Pixel

    3A600 Price and Stock

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    Carlo Gavazzi Holding AG GCA63A600VAC60HZ

    COIL ASSY 35-65A 600VAC60HZ
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    Master Electronics GCA63A600VAC60HZ
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    Newark GCA63A600VAC60HZ Bulk 5
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    TME GCA63A600VAC60HZ 5 4
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    • 100 $24.57
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    ITT Interconnect Solutions BKAD3-A60040301

    BKAD3-A60040301; Rack & Panel; Rack & Panel
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    Master Electronics BKAD3-A60040301
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    Avnet Americas BKAD3-A60040301 Bulk 38 Weeks 10
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    Interstate Connecting Components BKAD3-A60040301
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    CTS Corporation 353TB3A600T

    - Tape and Reel (Alt: 353TB3A600T)
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    Avnet Americas 353TB3A600T Tape & Reel 12 Weeks 1,000
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    Avnet Abacus 353TB3A600T Tape & Reel 17 Weeks 1,000
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    Abracon Corporation ISM16-6353A- 6.000 MHZ

    - Tape and Reel (Alt: ISM16-6353A- 6.000 MHZ)
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    Avnet Americas ISM16-6353A- 6.000 MHZ Tape & Reel 3,000
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    Kyocera AVX Components CP0603A6000GNTR

    - Tape and Reel (Alt: CP0603A6000GNTR)
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    Avnet Americas CP0603A6000GNTR Tape & Reel 14 Weeks 3,000
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    3A600 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    JS28F512M29

    Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
    Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    m29ew256-mbit512-mbitx8/x16+15100ns512-word14mb/skbytes/64pc28f00am29ewha11-apr-2011js28f512m29js28f256m29js28f256js28f512pc28f00am29ewjs28f00am29ewpc28f00am29js28f00js28f256m29ewl PDF

    Spansion S29GL512N11

    Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


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    s29glxxxns29gl512ns29gl256ns29gl128n+4128-word/256-byte8-word/16-byte27631sb2spansion s29gl512n11 PDF

    Electroswitch series 24

    Abstract: electroswitch 2438D Electroswitch electroswitch 24 Electroswitch series 20 2442D Electroswitch 105 2438D 03057-1-C3 Electroswitch series 40
    Contextual Info: Switches and Relays For the Power Industry E L E C T R O S W I T C H NeveR a Doubt U T I L I T Y P R O D U C T S Printed in USA 5M 113 ELECTROSWITCH Corporation 180 King Avenue Weymouth, MA 02188 TEL: 781 335-5200 FAX: (781) 335-4253 www.electroswitch.com


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    electroswitch series 24electroswitch 2438delectroswitchelectroswitch 24+6electroswitch series 202442delectroswitch 1052438d03057-1-c3electroswitch series 40 PDF

    Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,


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    s29gl-ns29gl512ns29gl256ns29gl128n+3s29gl128ps29gl256ps29gl512p PDF

    a22t

    Abstract: S19G S29GL-N
    Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


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    s29gl-ns29gl512ns29gl256ns29gl128n+2a22ts19g PDF

    S29GL-N

    Abstract: 1E300
    Contextual Info: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this


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    s29gl512/256/128ns29gl512ns29gl256ns29gl128n+2s29gl-n1e300 PDF

    7be0

    Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    m29ew256-mbit512-mbitx8/x16+5100ns512-word48mb/skbytes/647be0 PDF

    S70GL01GN00

    Abstract: S29GL01GP S29GL512N
    Contextual Info: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: The S70GL01GN has been retired and is not recommended for designs. For new and current designs, S29GL01GP


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    s70gl01gn00s70gl01gns29gl01gps29gl512n PDF

    2B60000

    Abstract: S70GL01GN00 S29GL512N gl512 2200-0002
    Contextual Info: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this document contains information on one or more products under development


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    s70gl01gn002b60000s29gl512ngl512+12200-0002 PDF

    M29EWL

    Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
    Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    m29ew256-mbit512-mbitx8/x16+10100ns512-word14mb/skbytes/64144kb256mbm29ewljs28f00am29ewh28f256m29ewjs28f00am29ew PDF

    JS28F00am29

    Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
    Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    m29ew256-mbit512-mbitx8/x16+14100ns512-word14mb/skbytes/64js28f00am29js28f00am29ewjs28f512m29js28f256m29pc28f00am29ewpc28f00am29js28f512pc28f00bpc28f512mjs28f256 PDF

    S29GL512N datasheet

    Abstract: GL128n s29gl256p S29GL256p spansion S29GL512P Spansion obsolescence S29GL S29GL128N S29GL128P S29GL256N S29GL512N
    Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet For new designs, S29GL512P, S29GL256P, and S29GL128P supersedes S29GL512N, S29GL256N, and


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    s29gl-ns29gl512ns29gl256ns29gl128n+7s29gl512ps29gl256ps29gl128ps29gl512n datasheetgl128ns29gl256p spansionspansion obsolescence s29gl PDF

    gl256N

    Abstract: S29GL512N datasheet S29GL-N S19GL128N 31df* 33H s29gl512 FBGA 8 x 14 package tray S29GL date code marking S29GL128N S29GL256N
    Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


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    s29gl-ns29gl512ns29gl256ns29gl128n+7gl256ns29gl512n datasheets19gl128n31df* 33hs29gl512fbga 8 x 14 package trays29gl date code marking PDF

    IN2071

    Abstract: 1N5171 1N2070 CER68 3c400 3001C 1N2069 1N4089 CER67 CER69
    Contextual Info: N IC R O S E H I CORP/ R p n 1 4 E D | t llt D M D GQDOOlfl T | o; Standard Recovery Axial Lead Epoxy Rectifiers — D.C. Current I q to 5 Amperes CER67 CER68 CER69 CER70 CER500 CER7T CER72 CER73 HCV HC30 HC67 HC68 HC69 HC70 HC500 HC71 HC72. HC73 HC1200


    OCR Scan
    tllb040cer67cer68cer69+111n2069cer701n2070cer500n2071cer72in20711n51713c4003001c1n4089 PDF

    2C200

    Abstract: S29GL S29GL128P S29GL512P S29GL128N S29GL256N S29GL256P S29GL512N S29GL-N S29GL-P
    Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,


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    s29gl-ns29gl512ns29gl256ns29gl128n+6s29gl128ps29gl256ps29gl512p2c200s29gls29gl-p PDF

    A 27631

    Abstract: 1128 marking s29gl512 GL256N S29GL128N S29GL256N S29GL512N A24-A0
    Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


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    s29glxxxns29gl512ns29gl256ns29gl128n+8128-word/256-byte8-word/16-byte27631a1a 276311128 markings29gl512gl256na24-a0 PDF

    S29GL512N datasheet

    Abstract: Spansion S29GL256N S29GL-N s29gl512 S29GL128N S29GL256N S29GL512N S29GL-P S29GL-N_00_
    Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


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    s29gl-ns29gl512ns29gl256ns29gl128n+5s29gl512n datasheetspansion s29gl256ns29gl512s29gl-ps29gl-n_00_ PDF

    JS28F512M29EWL

    Abstract: JS28F00AM29EWH JS28F256M29EWL JS28F512m29ewh JS28F00am29 pc28f512m29ewh JS28F256M29EWH JESD-47 PC28F00AM29EWH 28F256M29EW
    Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    m29ew256-mbit512-mbitx8/x16+14100ns512-word14mb/skbytes/64js28f512m29ewljs28f00am29ewhjs28f256m29ewljs28f512m29ewhjs28f00am29pc28f512m29ewhjs28f256m29ewhjesd-47pc28f00am29ewh28f256m29ew PDF

    JS28F512

    Abstract: JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29
    Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    m29ew256-mbit512-mbitx8/x16+15100ns512-word14mb/skbytes/6411-apr-2011pc28f00am29ewhbjs28f512js28f256m29ewlm29ewljs28f256m29js28f512m29js28f00am29pc28f5125d200pc28f256m29 PDF

    JS28F512M29

    Abstract: M29AWH PC28F512M29AWHB pc28f00am29 Micron 512MB NOR FLASH 8bit data PC28F00AM29AWLB PC28F512M PC28F512 JS28F512 M29A
    Contextual Info: Preliminary‡ 1Gb, 512Mb: x8, x16 3V Supply NOR Flash Memory Features Micron 3V Supply NOR Flash Memory M29AW – 1Gb, 512Mb x8/x16, Uniform Block Features • Blank check to verify an erased block • VPP/WP# pin protection – Protects first or last block regardless of block protection settings


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    512mbm29awx8/x16100ns+15110ns512-word128kb/6409005aef8462ccad/zip09005aef8462cca4js28f512m29m29awhpc28f512m29awhbpc28f00am29micron 512mb nor flash 8bit datapc28f00am29awlbpc28f512mpc28f512js28f512m29a PDF

    s29gl512

    Abstract: S29GL128N S29GL256N S29GL512N S29GL-N S29GL-P 0060000-007FFFF
    Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


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    s29gl-ns29gl512ns29gl256ns29gl128n+3s29gl512s29gl-p0060000-007ffff PDF

    square d ehb

    Abstract: EHB34040 EHB34060 Square D EHB34015 EHB34030 EHB34100 EHB14015 schneider air circuit breakers EHB BREAKER EH14015
    Contextual Info: EH/EHB and GJL Circuit Breakers Class 590, 652 E Frame – 100 A, Thermal Magnetic 480Y/277 Vac 1-Pole 277 V ac — 14,000 AIR 120 Vac — 65,000 AIR 2-Pole 480Y/277 Vac — 14,000 AIR 120/240 Vac — 65,000 AIR 3-Pole 480Y/277 Vac — 14,000 AIR 240 Vac — 65,000 AIR


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    480y/277eh14015square d ehbehb34040+7ehb34060square d ehb34015ehb34030ehb34100ehb14015schneider air circuit breakersehb breaker PDF

    Spansion S29GL256N

    Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


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    s29glxxxns29gl512ns29gl256ns29gl128n+4128-word/256-byte8-word/16-byte27631a3spansion s29gl256n PDF

    A 27631

    Abstract: 27631 1128 marking GL256N S29GL128N S29GL256N S29GL512N SA4871 SA417 24A000
    Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


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    s29glxxxns29gl512ns29gl256ns29gl128n+10128-word/256-byte8-word/16-byte27631a1a 27631276311128 markinggl256nsa4871sa41724a000 PDF