3D30BL Search Results

Contextual Info: E 6 & 6/CANADA/OP TOELEK R C /1 3D30blD DDD01DS 33T « C A N A 10 T - V /- Photodiode C30817 DATA SH EET Optics Silicon Avalan che Photodiode for G e n eral-Purp ose Applications • High Quantum Efficiency — 85% typical at 900 nm — 18% typical at 1060 nm

rca 036

Abstract: C30957E photodiode demodulation
Contextual Info: £ I G t & G/CANADA/OPTOELEK c / 3D30bl0 OOGGISS SbM H C A N A ID Photodiode C30957E DATA SHEET Optics l T - W n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm

ELLS 110

Abstract: avalanche photodiode bias avalanche photodiode preamplifier voltage C30919E
Contextual Info: E G & G/CANADA/OPTOELEK 1 3D30blD DDDDIB^ 711 « C A N A WM MWk ÆWElectro I i l i # Ph o to d io d e Hhil C30919E DATA SH EET • Optics Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module

C30642E

Abstract: rca 514 C30618 C30619 C30641 C30642 T018 el 85
Contextual Info: E G & G/CANADA/OPTOELEK ^ V n l l fl i f J f 1 I ID ]> • E le c tr o O p tic s 'T ^ £/ / 'S 3 3D30bl0 OODDDTD DÔ6 ■ CANA Photodiodes C30618, C30619, C30641, C30642 ¥ -

250BG

Contextual Info: E G & 6/CANADA/0PT0ELEK 47E 3D30blü I> 0QD030f l 4 • CANA UV Series -V /-5 1 Features • • • • Planar Diffused Structure Oxide Passivated Wide Spectral Range Flat Noise Spectrum to DC • Linearity Over Wide Dynamic Range Peak Responsivity: 0.62 A /W at 900 Nanometers

quadrant photodiode rca

Contextual Info: E 6 & 6/CANAD A/O PTOELEK ID 303Dbl0 GDQ0143 IME « C A N A D ÆM Electro n • I v i I Photodiode C30927E DATA SHEET Optics % Quadrant Silicon Avalanche Photodiodes for Tracking Applications Optical Characteristics Full Angle for Totally illuminated Photosensitive S u r fa c e .

SIECOR Fiber Optic cable

Contextual Info: E G & G/CANADA/OPTOELEK ^ M7E D • 3ü3DblG OGDOE^ EGzG OPTOELECTRONICS h ■ CANA C86075E& C86082E Series - n v / ' O i C86082E Series C86075E Series The EG&G series of 1300 nm LEDs are edge emitting InGaAsP

C30817

Abstract: s915 C30872 C30954E C30955E tic 1060 C30956E s914 C30916E 92LS-S916
Contextual Info: £ n G & G/CANADA/OPTOELEK e / ID » l Electro Optics 3 D 3 D b lO O O O O IH ^ bbO ICANA 'T '- y / '- S V Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —

Contextual Info: E G & G/CANADA/OPTOELÊK BOBOblD ODDOESb Q • CANA 850 nm Quantum Well 7^ : Pulsed Laser Series DATA SHEET C86083E - High power pulsed laser in a coaxial package T O peration at 50ns pulse duration and 3 kH z repetition rate H igh P eak O utput Pow er: 10W @ 17 A

Contextual Info: E G & G/ CANADA/ OPTOELEK 47E D • 3030L10 GD00312 b ■ PDA Series_ CANA t -V/-55 Features • • Linearity Over Wide Dynamic Range Cross Talk Between Elements <1% • Wide Spectral Range • Planar Diffused Structure Operating Data and Specifications at 23°C

SG2007A

Abstract: SG2004A 3G30b 904nm SG2006A M9002 SG2002A SG2007 SG2010A SG2012A
Contextual Info: E G & G/CANADA/OPTOELEK IO D • Æ M Electro ■ m m V ^ IO D t ic s 3 G 3 0 b l 0 0 0 0 0 0 7 0 2 TT ■iCAJ^IA-p.‘/ SG2000A Series GaAs Pulsed Lasers DATA SHEET 904 nm Gallium Arsenide Injection Lasers for Pulsed Operation Small Emitting Areas Variants With Reverse-Case Polarity are Available

C30617E

Abstract: C30616E ingaas LED 5-1304 C86013E C30986E C86054E C86057E-13 C86057E-13-TC C86057E-14
Contextual Info: E G 8. G / C A N A D A / O P T O E L E K ItCJI 10E D • 3030blD OOQQOn A ■ CANA "H’ Electro InGaAsP Infrared Emitters Optics 1300 nm LED SERIES DATA SHEET C86057E SERIES - D u al-in -L in e p ack ag e S in g le o r m u ltim o d e fiber C86013E C86054E

S86021E

Abstract: corning fiber optic S989 rca 628 RCA Solid State RCA Solid State power devices GaAs 850 nm Infrared Emitting Diode LPJ-100 S86018E S86017E
Contextual Info: E G 8. G / C A N A D A / O P T O E L E K I t C 10E 3D3Gbl G D 0000D23 Electro Optics and Devices i l T ICANA Infrared Emitters S86017E, S86018E S86020E,S86021E S86017E S86018E u 1 High-Speed Gallium Aluminum Arsenide IR-Emitters for Continuous or Pulse Applications

Contextual Info: G S C/CANADA/OPTOELEK 10E C • 3030bl0 0000051 ICANA 1 C86006E. C86010E GaAlAs Injection Lasers Developmental Types 820 nm Gallium Aluminum Arsenide Injection Lasers for CW or Pulsed Operation With Integral Fiber Optic Cables and Connectors RCA developm ental types C86006E

RCA 4046

Abstract: RCA Solid State rca 036 C30948E 3ls543sr1
Contextual Info: F f & g/CANADA/OPTOELEK id ]> • 3 Q 3 0 b l 0 □□□□□40 SSE « C A N A Solid State Detectors n n n ElectroOpt.cs I m U P w l and Devices Developm ental TvDe C30948E Photodiode Silicon Avalanche Photodiode Having Very High Modulation Capability ■ High Quantum Efficiency 85% typical at 830 and 900 nm