38GRAMS Search Results

Contextual Info: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing

Contextual Info: FMA3058 FMA3058 2GHz to 20GHz BROADBAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA3058 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using our

X-band Gan Hemt

Abstract: FMA246 A246 MIL-HDBK-263 x-band mmic MIL-STD-1686 X-band GaAs pHEMT MMIC Chip
Contextual Info: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V

X-band Gan Hemt

Abstract: 84-1 CONDUCTIVE EPOXY MIL-HDBK-263 84-1 LMIT x-Band Hemt Amplifier
Contextual Info: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare

FMA3058

Abstract: MIL-HDBK-263 fma-3058 GaN Amplifier 20GHz DS090609
Contextual Info: FMA3058 FMA3058 2GHz to 20GHz BROADBAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA3058 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using our

x-Band Hemt Amplifier

Abstract: x-band mmic X-band GaAs pHEMT MMIC Chip
Contextual Info: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V

FPD750

Abstract: MIL-HDBK-263 InP HBT transistor DS090609
Contextual Info: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing

Contextual Info: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V