38485 Search Results

ASTM-D-1457

Abstract: ASTMD1457 astm-d1457 ASTM-D-196
Contextual Info: DASH NO. M CODE MADE FROM GSD REVISIONS CN 34902 C REDRAWN JCA 10/01/93 o I to CN 38485 E TML 02/22/02 OJ I o CD WAS: JCA4375 LC9306S 4:1 sc a le APPROX SURFACE AREA NOTES: 1. MATERIALS: INSULATORS: TEFLON, ASTM-D-1457 GASKET: SIL. RUB. QQ-R-765 OUTER CONTACT

Contextual Info: ROHS COMPLIANT PRODUCT DATA DRAWING REVISION HISTORY DESCRIPTION DATE APPROVED - DCN 38485 08/11 STW A DCN 38589 09/11 STW REV .289 7.34 .287 7.29 .132 3.35 .142 3.61 RP .088 2.24 6X .096 2.44 2X .024 0.61 2X .135 3.43 MATERIAL: INTERFACE BODIES: LEGGED BODY,

HL6525MG

Contextual Info: HL6525MG Visible High Power Laser Diode for Recordable-DVD ODE-208-1602G Z Rev.7 Mar. 2005 Description The HL6525MG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories, such as Recordable-DVD, and

LA4705

Abstract: EN3848D SIP18H SANYO car amplifier ic CATALOG
Contextual Info: Ordering number: EN3848D Monolithic Linear IC LA4705 15 W 2-channel BTL AF Power Amplifier for Car Stereos Overview Package Dimensions unit: mm 3109-SIP18H [LA4705] 37.0 4.5 30.0 CC L . . 6.0 . High power: supports total output of 25 W + 25 W = 14.4 V, THD = 30%, R = 4 Ω

HL6714G

Contextual Info: HL6714G AlGaInP Laser Diode ODE-208-192C Z Rev.3 Jan. 2003 Description The HL6714G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for laser beam printers, levelers and various other types of optical

opnext

Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
Contextual Info: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring

HL6724MG

Abstract: OPNEXT
Contextual Info: HL6724MG AlGaInP Laser Diode ODE-208-261E Z Rev.5 Jan. 2003 Description The HL6724MG is a 0.67 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for laser pointers and optical equipments for amusement.

TR6143

Abstract: advantest TR6143 opnext laser diode HP6655A apc driver for laser diode DESIGN AC VOLTMETER USING TWO DIODE Tektronix TDS 460A manual LDC-3722B infrared laser diode AM503
Contextual Info: ODE-608-001B Z Opnext Laser Diodes Surge Damage Prevention Manual Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility

m15733

Abstract: N5600 N4200 N2200 N4700 N1500 N330 P100 N56002 MIL-C-81
Contextual Info: TEMPERATURE COMPENSATING PlOO THRU N750 EXTENDED TEMPERATURE COMPENSATING N1500 THRU N5600 TEM PER A TU R E °C TEM PER A TU R E °C EXPANDED TC LIMITS FOR /nnm/- n LOW CAPACITANCE VALUES ' pp ' ’ T e m p e ra tu re C a p a c it a n c e : C a p a c it a n c e

Contextual Info: HL6347MG/48MG ODE-208-019 Z Rev.0 Jul. 01, 2005 Circular Beam Low Operating Current Description The HL6347MG/48MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source

208017

Contextual Info: HL6312G/13G ODE-208-017 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types

Contextual Info: HL6316G ODE-208-026 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6316G is a 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. It is suitable as light sources for laser pointers and optical equipment. Features •

Contextual Info: HL6360MG/61MG ODE-208-010B Z Rev.2 May 30, 2006 Low Operating Current Visible Laser Diode Description The HL6360MG/61MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

Contextual Info: HL6554MG ODE-208-036B Z Rev.2 May 17, 2006 AlGaInP Laser Diodes Description The HL6554MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.

2e474

Abstract: 2E473M 2E104 2e333 2E223 2E224 2E103 2E-823 2E562 2E563M
Contextual Info: FILM CAPACITORS FOR RADIO INTERFERENCE SUPPRESSION • Standard Ratings M etallized Polyester Film C apacito rs FADE-SERIES P a r t No. FADE2E103K FADE2E153K FADE2E223K FADE2E333K FADE2E473K FADE2E683K FADE2E104K FADE2E154K FADE2E224K FADE2E334K FADE2E474K

Semicon volume 1

Abstract: AWM 2851 VW-1 AWM 2835 cable
Contextual Info: Industrial Cable S ERV IN G IN DU STR I AL , SP ECI ALT Y AN D COMMERCI AL AP P LI CATI O N S APRIL 2015 What’s New? Industrial Serving Industrial, Specialty and Commercial Applications GENFREE II LOW-SMOKE, ZERO-HALOGEN CABLE S This catalog contains indepth information on the

HL6501MG

Abstract: opto device
Contextual Info: HL6501MG Visible High Power Laser Diode ODE-208-515I Z Rev.9 Jan. 2003 Description The HL6501MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories, such as DVD-R, and

HE8807FL

Abstract: HE8807SG
Contextual Info: HE8807SG/FL GaAlAs Infrared Emitting Diodes ODE-208-998A Z Rev.1 Jan. 2003 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • High output, high efficiency • Narrow spectral width

HL6722G

Contextual Info: HL6722G AlGaInP Laser Diode ODE-208-220D Z Rev.4 Jan. 2003 Description The HL6722G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for bercode scanner, and various other types of optical equipment.

HL6364DG

Abstract: HL6365DG
Contextual Info: HL6364DG/65DG ODE-208-060 Z Low Operating Current Visible Laser Diode Preliminary Rev.0 May 17, 2006 Description The HL6364DG/65DG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

HL6545MG

Abstract: opnext
Contextual Info: HL6545MG Visible High Power Laser Diode for Recordable-DVD ODE-208-038C Z Rev.3 Feb. 24, 2006 Description The HL6545MG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories, such as H/H type Recordable-DVD, and various

HL6548FG

Contextual Info: HL6548FG ODE-208-015C Z Rev.3 Mar. 13, 2006 Visible High Power Laser Diode Description The HL6548FG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for measurement, and various other types of optical equipment.

HL6325G

Abstract: HL6326G
Contextual Info: HL6325G/26G Low Operating Current Visible Laser Diode ODE-208-781C Z Rev.3 Jan. 2003 Description The HL6325G/26G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

LD5033

Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
Contextual Info: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet