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    380 TRANSISTOR Search Results

    380 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    		Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    		Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    		Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy
    27S185DM/B
    		Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    380 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MRF229

    Abstract: 5A09 2N3553 motorola Transistor 2N3866 MRF317 motorola mrf MRF high power transistor MRF314A MRF340 transistor MRF317
    Contextual Info: ÌF PRODUCTS — BIPOLAR POWER TRANSISTORS continued CASE 79-02 TO-205AD (TO-39) CASE ; 44B-05 (.380" Stud) CASE 145A-09 (.380" Stud) CASE 211-07 CASE 211 -09 (.380" Flange) CASE 79-03 (TO-205 Type I CASE 221A-02 (TO-220AB) For VIHF Applications 30-20CI MHz VHF AM/FM Transistors


    OCR Scan     		O-205AD O-205 44B-05 45A-09 21A-02 O-220AB) 30-20CI 28-vo MRF314/15/16/17 MRF340 MRF229 5A09 2N3553 motorola Transistor 2N3866 MRF317 motorola mrf MRF high power transistor MRF314A transistor MRF317 PDF

    BD376

    Abstract: bd379
    Contextual Info: BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively PNP Epitaxial Silicon Transistor TO-126 1 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		BD376/378/380 BD375, BD377 BD379 BD376 BD378 BD380 O-126 BD376 PDF

    AA104VB05

    Abstract: DF9B-31P-1V DF9B-31S-1V ENH104V2-380 ENH104V2-450 ENH104V2-600 64-gray-bar-pattern
    Contextual Info: White Electronic Designs Display Systems Division ENH104V2-380/450/600 ENH104V2-380/450/600 Color TFT-LCD Module Features SPECIFICATIONS GENERAL DESCRIPTION Panelview provides optically enhanced solutions to the standard Optrex AA104VB05 color TFT-LCD Thin


    Original     		ENH104V2-380/450/600 ENH104V2-380/450/600 AA104VB05 IM/110 DF9B-31P-1V DF9B-31S-1V ENH104V2-380 ENH104V2-450 ENH104V2-600 64-gray-bar-pattern PDF

    AA104VB05

    Abstract: block diagram of black and white t.v LCD-7000 touch screen Lamination DF9B-31P-1V DF9B-31S-1V ENH104V2-380 ENH104V2-450 ENH104V2-600 SM02
    Contextual Info: ENH104V2-380/450/600 White Electronic Designs Display Systems Division ENH104V2-380/450/600 Color TFT-LCD Module Features SPECIFICATIONS GENERAL DESCRIPTION WEDC provides optically enhanced solutions to the standard Optrex AA104VB05 color TFT-LCD Thin Film


    Original     		ENH104V2-380/450/600 ENH104V2-380/450/600 AA104VB05 IM/110 block diagram of black and white t.v LCD-7000 touch screen Lamination DF9B-31P-1V DF9B-31S-1V ENH104V2-380 ENH104V2-450 ENH104V2-600 SM02 PDF

    MRF485

    Abstract: MRF477 Motorola transistors MRF475 Motorola transistors MRF485 MRF466 MRF476 Motorola transistors MRF477 UHF-800 mrf464 MRF475
    Contextual Info: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de­ signed for operation in RF Power Amplifiers. These transistors


    OCR Scan     		Distorti1-11 MRF421 MRF475 O-22GAB MRF412 IMRF410 MRF485 MRF401 45A-09 MRF426 MRF477 Motorola transistors MRF475 Motorola transistors MRF485 MRF466 MRF476 Motorola transistors MRF477 UHF-800 mrf464 PDF

    PTB 20200

    Contextual Info: ERICSSON ^ PTB 20200 30 Watts, 380-500 MHz Cellular Radio RF Power Transistor Description The 20200 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380-500 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF

    3733

    Abstract: imo 3 sd1090 2n5635 4l stud SD 1470 TQ-60 2N5016 2N5090
    Contextual Info: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type Package PIN SD # 2N 3866 2N 5090


    OCR Scan     		TQ-60 T0-60 15BAL 28/2x100 450SQ4LFL 3733 imo 3 sd1090 2n5635 4l stud SD 1470 TQ-60 2N5016 2N5090 PDF

    TIC 122 Transistor

    Abstract: transistor R1A
    Contextual Info: ERICSSON ^ PTB 20204 1.0 Watt, 380-500 MHz RF Power Transistor D escription The E 20204 is a class A, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380 to 500 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF

    RA55H3847M

    Abstract: Pout-120
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H3847M RoHS COMPLIANCE , 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3847M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 380- to


    Original     		RA55H3847M 380-470MHz RA55H3847M 55-watt 470-MHz Pout-120 PDF

    2n6080

    Abstract: SD 1062 transistor 2N3924 sd 3632
    Contextual Info: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS GiflO Ml(LgmM § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022 VCC (V


    OCR Scan     		XO-72 O-117SL O-117SL 2N6080 T0-60 SD 1062 transistor 2N3924 sd 3632 PDF

    RA55H3847M

    Abstract: 310A tube RF MOSFET MODULE
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H3847M RoHS COMPLIANCE , 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3847M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 380- to


    Original     		RA55H3847M 380-470MHz RA55H3847M 55-watt 470-MHz 310A tube RF MOSFET MODULE PDF

    RA55H3847M

    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H3847M RoHS COMPLIANCE , 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3847M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 380- to


    Original     		RA55H3847M 380-470MHz RA55H3847M 55-watt 470-MHz PDF

    BFR38

    Abstract: BFR99 2N6080 2N956 BFX89 BSX33 9552N TO-117SL XO-72 pnp 2222a
    Contextual Info: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS G iflO M l(L g m M § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022


    OCR Scan     		XO-72 O-117SL O-117SL 2N6080 BSX33 2N956 BFR38 BFR99 BFX89 9552N TO-117SL pnp 2222a PDF

    RK-3

    Abstract: ADL5536 ADL5536ARKZ-R7 ADL5536ARK
    Contextual Info: 20 MHz to 1.0 GHz IF Gain Block ADL5536 Preliminary Technical Data FEATURES Fixed gain of 20 dB Operation from 20 MHz to 1.0 GHz Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 46.5 dBm at 380 MHz P1dB of 19.8 dBm at 380 MHz


    Original     		OT-89 ADL5536 ADL5536 121808-B O-243 OT-89} ADL5536ARKZ-R7 ADL5536-EVALZ1 OT-89, RK-3 ADL5536ARK PDF

    0603LS-NX

    Abstract: ADL5536-EVALZ ADL5536 db 2263 ADL5536ARKZ ADL5536ARKZ-R7 ADL5535 AN-772
    Contextual Info: 20 MHz to 1.0 GHz IF Gain Block ADL5536 Fixed gain of 20 dB Operation from 20 MHz to 1.0 GHz Input and output internally matched to 50 Ω Integrated bias control circuit OIP3 45.0 dBm at 190 MHz 49.0 dBm at 380 MHz Noise figure 2.6 dB at 190 MHz 2.7 dB at 380 MHz


    Original     		ADL5536 OT-89 ADL5535 ADL5536 O-243 12-18-2008-B OT-89] ADL5536ARKZ-R7 ADL5536-EVALZ 0603LS-NX ADL5536-EVALZ db 2263 ADL5536ARKZ ADL5536ARKZ-R7 ADL5535 AN-772 PDF

    4b dmz ptc

    Abstract: melcher bM 3040 H1501 H1000 melcher ac-dc converter melcher LM 1000 Melcher dc-dc converter bm 1000 1206 FUSE marking UD 1301-7R MELCHER THE POWER PARTNERS Melcher LK 2660-7R
    Contextual Info: DC-DC Converters <100 W 7 DC-DC Converters <100 W 7.1 Rugged Environment Output [W] 10 20 40 60 80 100 7.2 3 Output [V DC] 5 12 15 24 36 48 Input [V DC] 10 30 70 140 220 380 Product Family Case Page M M02 7-2 S S02 7 - 26 Input [V DC] 10 30 70 140 220 380


    Original     		PDF

    TIP125

    Contextual Info: DC COMPONENTS CO., LTD. TIP125 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-220AB Pinning .405 10.28 .380(9.66) 1 = Base


    Original     		TIP125 O-220AB -100mA -12mA -20mA -500mA, TIP125 PDF

    TIP122

    Abstract: 890 f 562 ic
    Contextual Info: DC COMPONENTS CO., LTD. TIP122 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-220AB Pinning .405 10.28 .380(9.66) 1 = Base


    Original     		TIP122 O-220AB 100mA 500mA, TIP122 890 f 562 ic PDF

    BD380

    Abstract: BD376 BD378 380 transistor BD375
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BD376/378/380 DESCRIPTION •DC Current Gain: hFE= 20 Min @ IC= -1A ·Complement to Type BD375/377/379 APPLICATIONS ·Designed for medium power linear and switching applications


    Original     		BD376/378/380 BD375/377/379 BD376 BD378 BD380 BD380 BD376 BD378 380 transistor BD375 PDF

    2SC4242

    Abstract: transistor 2sc4242 2SC424
    Contextual Info: DC COMPONENTS CO., LTD. 2SC4242 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high speed switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28 .380(9.66) .295(7.49)


    Original     		2SC4242 O-220AB 2SC4242 transistor 2sc4242 2SC424 PDF

    BU406

    Abstract: transistor BU406
    Contextual Info: DC COMPONENTS CO., LTD. BU406 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in TV horizontal output and switching applications. TO-220AB Pinning .405 10.28 .380(9.66) 1 = Base 2 = Collector


    Original     		BU406 O-220AB 100mA, BU406 transistor BU406 PDF

    TIP32C

    Contextual Info: DC COMPONENTS CO., LTD. TIP32C DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose amplifier and switching applications. TO-220AB Pinning .405 10.28 .380(9.66) 1 = Base 2 = Collector


    Original     		TIP32C O-220AB -30mA, -100V -375mA TIP32C PDF

    2sd880 equivalent

    Abstract: 2SD880, 1.5 power dissipation 2SD880 2sD880 TRANSISTOR
    Contextual Info: DC COMPONENTS CO., LTD. 2SD880 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28 .380(9.66)


    Original     		2SD880 O-220AB 2sd880 equivalent 2SD880, 1.5 power dissipation 2SD880 2sD880 TRANSISTOR PDF

    pnp transistor d 640

    Abstract: 2SB857 transistor 2SB857
    Contextual Info: DC COMPONENTS CO., LTD. 2SB857 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28 .380(9.66) .295(7.49)


    Original     		2SB857 O-220AB -50mA, -500mA, 100MHz pnp transistor d 640 2SB857 transistor 2SB857 PDF