380 TRANSISTOR Search Results

MRF229

Abstract: 5A09 2N3553 motorola Transistor 2N3866 MRF317 motorola mrf MRF high power transistor MRF314A MRF340 transistor MRF317
Contextual Info: ÌF PRODUCTS — BIPOLAR POWER TRANSISTORS continued CASE 79-02 TO-205AD (TO-39) CASE ; 44B-05 (.380" Stud) CASE 145A-09 (.380" Stud) CASE 211-07 CASE 211 -09 (.380" Flange) CASE 79-03 (TO-205 Type I CASE 221A-02 (TO-220AB) For VIHF Applications 30-20CI MHz VHF AM/FM Transistors

BSC ERICSSON

Abstract: 855PB ericsson bsc
Contextual Info: Preliminary PBL 380 85 July 1999 PBL 380 85 Integrated circuit for transformerless driving of battery powered EL electroluminicent lamps Description. Key features. PBL 380 85 is a monolithic integrated circuit for supplying power to an EL (electroluminicent) lamp. This is intended to replace the LCD background illumination

BD376

Abstract: bd379
Contextual Info: BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively PNP Epitaxial Silicon Transistor TO-126 1 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted

AA104VB05

Abstract: DF9B-31P-1V DF9B-31S-1V ENH104V2-380 ENH104V2-450 ENH104V2-600 64-gray-bar-pattern
Contextual Info: White Electronic Designs Display Systems Division ENH104V2-380/450/600 ENH104V2-380/450/600 Color TFT-LCD Module Features SPECIFICATIONS GENERAL DESCRIPTION Panelview provides optically enhanced solutions to the standard Optrex AA104VB05 color TFT-LCD Thin

AA104VB05

Abstract: block diagram of black and white t.v LCD-7000 touch screen Lamination DF9B-31P-1V DF9B-31S-1V ENH104V2-380 ENH104V2-450 ENH104V2-600 SM02
Contextual Info: ENH104V2-380/450/600 White Electronic Designs Display Systems Division ENH104V2-380/450/600 Color TFT-LCD Module Features SPECIFICATIONS GENERAL DESCRIPTION WEDC provides optically enhanced solutions to the standard Optrex AA104VB05 color TFT-LCD Thin Film

MRF485

Abstract: mrf477 MRF475 MRF476 Motorola transistors MRF476 Motorola transistors MRF475 Motorola transistors MRF455 MRF466 MRF455 MRF460
Contextual Info: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de­ signed for operation in RF Power Amplifiers. These transistors

MRF485

Abstract: MRF477 Motorola transistors MRF475 Motorola transistors MRF485 MRF466 MRF476 Motorola transistors MRF477 UHF-800 mrf464 MRF475
Contextual Info: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de­ signed for operation in RF Power Amplifiers. These transistors

PTB 20200

Contextual Info: ERICSSON ^ PTB 20200 30 Watts, 380-500 MHz Cellular Radio RF Power Transistor Description The 20200 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380-500 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP

power amplifier IC 4440

Abstract: BFR99 t 3866 transistor BFR99A CE-28 bf 225 vhf/SRF 3733 t 3866 power transistor tic 1060 BFR38
Contextual Info: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type PIN Package Config. (V) pout min

3733

Abstract: imo 3 sd1090 2n5635 4l stud SD 1470 TQ-60 2N5016 2N5090
Contextual Info: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type Package PIN SD # 2N 3866 2N 5090

TIC 122 Transistor

Abstract: transistor R1A
Contextual Info: ERICSSON ^ PTB 20204 1.0 Watt, 380-500 MHz RF Power Transistor D escription The E 20204 is a class A, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380 to 500 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP

RA55H3847M

Abstract: Pout-120
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H3847M RoHS COMPLIANCE , 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3847M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 380- to

2n6080

Abstract: SD 1062 transistor 2N3924 sd 3632
Contextual Info: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS GiflO Ml(LgmM § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022 VCC (V

6lfl

Abstract: sd 1144 2N6080 7-02N sd1410 2N5643
Contextual Info: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS GiflO Ml(LgmM § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022 VCC (V

RA55H3847M

Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H3847M RoHS COMPLIANCE , 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3847M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 380- to

BFR38

Abstract: BFR99 2N6080 2N956 BFX89 BSX33 9552N TO-117SL XO-72 pnp 2222a
Contextual Info: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS G iflO M l(L g m M § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022

RK-3

Abstract: ADL5536 ADL5536ARKZ-R7 ADL5536ARK
Contextual Info: 20 MHz to 1.0 GHz IF Gain Block ADL5536 Preliminary Technical Data FEATURES Fixed gain of 20 dB Operation from 20 MHz to 1.0 GHz Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 46.5 dBm at 380 MHz P1dB of 19.8 dBm at 380 MHz

adl5535

Abstract: ADL5535ARKZ-R7 ADL5535-EVALZ ADL5536 AN-772 MABA-007159-000000
Contextual Info: 20 MHz to 1.0 GHz IF Gain Block ADL5535 Fixed gain of 16 dB Operation from 20 MHz to 1.0 GHz Input and output internally matched to 50 Ω Integrated bias control circuit OIP3 45.5 dBm at 190 MHz 45.5 dBm at 380 MHz Noise figure 3.2 dB at 190 MHz 3.3 dB at 380 MHz

0603LS-NX

Abstract: ADL5536-EVALZ ADL5536 db 2263 ADL5536ARKZ ADL5536ARKZ-R7 ADL5535 AN-772
Contextual Info: 20 MHz to 1.0 GHz IF Gain Block ADL5536 Fixed gain of 20 dB Operation from 20 MHz to 1.0 GHz Input and output internally matched to 50 Ω Integrated bias control circuit OIP3 45.0 dBm at 190 MHz 49.0 dBm at 380 MHz Noise figure 2.6 dB at 190 MHz 2.7 dB at 380 MHz

4b dmz ptc

Abstract: melcher bM 3040 H1501 H1000 melcher ac-dc converter melcher LM 1000 Melcher dc-dc converter bm 1000 1206 FUSE marking UD 1301-7R MELCHER THE POWER PARTNERS Melcher LK 2660-7R
Contextual Info: DC-DC Converters <100 W 7 DC-DC Converters <100 W 7.1 Rugged Environment Output [W] 10 20 40 60 80 100 7.2 3 Output [V DC] 5 12 15 24 36 48 Input [V DC] 10 30 70 140 220 380 Product Family Case Page M M02 7-2 S S02 7 - 26 Input [V DC] 10 30 70 140 220 380

TIP125

Contextual Info: DC COMPONENTS CO., LTD. TIP125 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-220AB Pinning .405 10.28 .380(9.66) 1 = Base

TIP122

Abstract: 890 f 562 ic
Contextual Info: DC COMPONENTS CO., LTD. TIP122 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-220AB Pinning .405 10.28 .380(9.66) 1 = Base

Contextual Info: BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD375, BD377 and BD379 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol : BD376 Rating VcB O : BD378 : BD380

BD380

Abstract: BD376 BD378 380 transistor BD375
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BD376/378/380 DESCRIPTION •DC Current Gain: hFE= 20 Min @ IC= -1A ·Complement to Type BD375/377/379 APPLICATIONS ·Designed for medium power linear and switching applications