3780M Search Results

Contextual Info: RF1156 BROADBAND LOW POWER SP5T SWITCH Package Style: QFN, 16-pin, 3mmx3mm RF1156 RF1 Features       RF2 450MHz to 2.69GHz Operation Very Low Insertion Loss: Cell Band 0.40dB PCS Band 0.55dB High Isolation: Cell Band 30dB PCS Band 22dB Compatible With Low Voltage

Contextual Info: RF1201 RF1201broadband 10W spdt switch BROADBAND 10W SPDT SWITCH Package: QFN, 6-Pin, 2mm x 2mm x 0.85mm Features         Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:

RF1196

Abstract: DS1103
Contextual Info: RF1196 RF1196SDM with Integrated B1 Duplexer: QB GSM, TB UMTS SDM WITH INTEGRATED B1 DUPLEXER: QB GSM, TB UMTS Package: Module, 4.5mmx4.5mmx1.0 mm RF1196 GSM Rx1 GSM Rx2 Features        GSM Rx3 Very Low IL and High Isolation: GSM LB Tx: 1.1dB

R4003

Abstract: hdr1x6 RF5A 7915m
Contextual Info: RF1156 BROADBAND LOW POWER SP5T SWITCH Package Style: QFN, 16-pin, 3mmx3mm RF1156 RF1 Features       RF2 450MHz to 2.69GHz Operation Very Low Insertion Loss: Cell Band 0.40dB PCS Band 0.55dB High Isolation: Cell Band 30dB PCS Band 22dB Compatible With Low Voltage

band 1 duplexer

Abstract: RF1196 1085MHz umts duplexer LTE duplexer
Contextual Info: RF1196 RF1196SDM with Integrated B1 Duplexer: QB GSM, TB UMTS SDM WITH INTEGRATED B1 DUPLEXER: QB GSM, TB UMTS Package: Module, 4.5mmx4.5mmx1.0 mm RF1196 GSM Rx1 GSM Rx2 Features        GSM Rx3 Very Low IL and High Isolation: GSM LB Tx: 1.1dB

RFMD RF1201

Abstract: HDR 1X2 RFmd SPDT
Contextual Info: RF1201 RF1201broadband 10W spdt switch BROADBAND 10W SPDT SWITCH Package: QFN, 6-Pin, 2mm x 2mm x 0.85mm Features         Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:

rca 927

Contextual Info: 75W DC-DC Half-Brick Regulated Single Output Converter MHB75 series Features : Half-brick size 2.28" 2.4" 0.5" with industry standard pin out 2:1 wide input range Protections: Short circuit / Over current / Over voltage / Over temperature High efficiency up to 89%

jeida dram 88 pin

Contextual Info: H E X Sem iconductor M TC8102M 32-XX2A1 -01 DRAM CARD DESCRIPTION The MTC8102M32-xx2Al-01 is a 2M-byte dynamic RAM card composed of 512K-word x 32-bit, being a 88-pin 2-piece type card proposed by the DRAM card guide-line of JEIDA. This provides a built-in buffer IC together with the DRAM device.

Cell Jammer

Abstract: 2110MHz Bluetooth Jammer RF1136 RF113
Contextual Info: RF1146 BROADBAND LOW POWER SP4T SWITCH Package Style: QFN, 16-pin, 3mmx3mm RF1146 RF1 Features       Low Frequency - 2.5GHz Operation Very Low Insertion Loss: Cell Band 0.35dB PCS Band 0.45dB High Isolation: Cell Band 29dB PCS Band 22dB Compatible With Low Voltage

Contextual Info: RF1156 BROADBAND MEDIUM POWER SP5T SWITCH Package Style: QFN, 16-pin, 3mmx3mm RF1156 RF1 Features       RF2 Low Frequency - 2.7GHz Operation Very Low Insertion Loss: Cell Band 0.40dB PCS Band 0.55dB High Isolation: Cell Band 30dB PCS Band 22dB

GSM400

Abstract: RF8889A RFMD ASM RF8889 RFMD LTE Band 40
Contextual Info: RF8889A RF8889A SP10T ANTENNA SWITCH MODULE SP10T ANTENNA SWITCH MODULE Package: QFN, 3.0mmx3.8mmx0.85mm RF8889A GSM Rx1 GSM Rx2 Features           GSM Rx3 TRX1 Broadband Performance Suitable for all Cellular Modulation Schemes up to

Bluetooth Jammer

Abstract: RF1136
Contextual Info: RF1146 BROADBAND LOW POWER SP4T SWITCH Package Style: QFN, 16-pin, 3mmx3mm RF1146 RF1 Features       Low Frequency - 2.5GHz Operation Very Low Insertion Loss: Cell Band 0.35dB PCS Band 0.45dB High Isolation: Cell Band 29dB PCS Band 22dB Compatible With Low Voltage

Contextual Info: O K I semiconductor MSC2320A-XXYS9 262, 144 BY 36BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki MSC2320A-XXYS9 is a fully decoded, 262,144 words X 36 bit CMOS dynamic random access memory composed of eight 1 Mb DRAMs in SOJ MSM514256AJS and four 256 Kb drams in

SMD LTYN

Abstract: ic 4440 40w amplifier 12v ltls e3 Weston 2281 thermometer LT3060ITS8 Transistor SR 6863 TO-126 LTC3855EUH-1 LTPG e3 5Dx diode SMD LTABA
Contextual Info: November 2009 Product Selection Guide Amplifiers Data Converters Linear Regulators Switching Regulators µModule DC/DC Converters Battery Chargers LED Drivers Hot Swap Interface Filters RF/Wireless Silicon Oscillators Comparators Supervisory Circuits References

Contextual Info: RF8889A RF8889A SP10T ANTENNA SWITCH MODULE SP10T ANTENNA SWITCH MODULE Package: QFN, 3.0mmx3.8mmx0.85mm RF8889A GSM Rx1 GSM Rx2 Features GSM Rx3 Broadband Performance Suitable for all Cellular Modulation Schemes up to 2.7GHz TRX1  Excellent Insertion Loss and

RF1201

Abstract: RFMD RF1201 jammer gsm
Contextual Info: RF1201 BROADBAND 10W SPDT SWITCH RFMD Green, RoHS Compliant, Pb-Free Product Package Style: QFN, 6-Pin, 2.00mmx2.00mmx0.85mm Features „ „ „ „ „ „ „ „ Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:

lm 7803 3V Positive Voltage Regulator

Abstract: ic 4440 40w amplifier 12v ltsx e3 mt 1389 de LM 4440 AUDIO AMPLIFIER CIRCUIT w10 mic package bridge rectifier PF08109B smd code marking 162 sot23-5 ul 1741 grid te inverter datasheet ltqt e3
Contextual Info: May 2009 Product Selection Guide Amplifiers Data Converters Linear Regulators Switching Regulators µModule DC/DC Converters Battery Chargers LED Drivers Hot Swap Interface Filters High Frequency Silicon Oscillators Comparators P Supervisor References Reference

DLF32B2450P56-N04

Abstract: 1460mhz 929MHz Abundance DLF23B
Contextual Info: 1n m iliayerji T •T 1 1 ■ 1 rm 1 im DLF32 DLF 31 1 rm 1 IT Features ★ Low height ★ Small package ★ Cordless phone Applications -k Mobile phone ★ GPS Dimension Unit : mm * ]□ [ Spec. DLF43 DLF 22 Length(mm) 4.5 3.2 3.2 2.5 2.0 Width(mm) 3.2

RF1450

Abstract: RF1450PCBA-410
Contextual Info: RF1450 BROADBAND HIGH POWER SP4T SWITCH „ „ „ „ High Linearity: IMD <-115dBm Excellent Harmonic Performance: -80dBc at 1GHz GaAs pHEMT Process Applications „ „ „ „ Cellular Handset Applications Multi-Mode GSM, WCDMA Applications GSM/GPRS/EDGE Switch

Contextual Info: RF1450 BROADBAND HIGH POWER SP4T SWITCH ̈ ̈ ̈ ̈ Applications ̈ ̈ ̈ ̈ Cellular Handset Applications Multi-Mode GSM, WCDMA Applications GSM/GPRS/EDGE Switch Applications Cellular Infrastructure Applications GND RF1 pHEMT Switch GND 1 Low Frequency - 2.5GHz

Contextual Info: RF1146 BROADBAND LOW POWER SP4T SWITCH Package Style: QFN, 16-pin, 3mmx3mm RF1146 RF1 Features       RF2 Low Frequency - 2.5GHz Operation Very Low Insertion Loss: Cell Band 0.35dB PCS Band 0.45dB High Isolation: Cell Band 29dB PCS Band 22dB

RF1147

Contextual Info: RF1147 BROADBAND LOW POWER SP4T SWITCH Package Style: QFN, 16-pin, 3mmx3mm Features       Low Frequency - 2.7GHz Operation Very Low Insertion Loss: Cell Band 0.35dB PCS Band 0.45dB High Isolation: Cell Band 29dB PCS Band 22dB Compatible With Low Voltage

MDR605C

Abstract: 1890MHZ
Contextual Info: MDR605C 1.89GHz DECT TOP BPF Characteristics MDR605C Zin/Zout 50 ohm Nominal Fc 1890MHz Nominal Pass Band 1880-1900MHz Insertion Loss 1.2 dB max 1880-1900MHz at 25 Deg.C 1.5 dB max (1880-1900MHz at -40 up to +85 Deg.C) Ripple 0.5 dB max (1880-1900MHz) V.S.W.R

Contextual Info: OKI semiconductor MSC2320A-xxYS9 262,144 Word BY 36 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2320A-xxYS9 is a futly decoded, 262,144 word x 36 bit CMOS dynamic random access memory composed of eight 1Mb DRAMs in SOJ MSM514256AJS and four 256 Kb DRAMs in PLCC