357C Search Results

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1237D5PZ Microcontroller D ATA SHE E T D S -T M 4C 1237 D5 P Z - 1 5 5 5 3 . 2 7 0 0 S P M S 357C C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2013 Texas Instruments Incorporated. Tiva and TivaWare are trademarks of Texas Instruments Incorporated. ARM and Thumb are

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1237D5PZ Microcontroller D ATA SHE E T D S -T M 4C 1237 D5 P Z - 1 5 5 5 3 . 2 7 0 0 S P M S 357C C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2013 Texas Instruments Incorporated. Tiva and TivaWare are trademarks of Texas Instruments Incorporated. ARM and Thumb are

561 A7

Abstract: 3A71 BC631
Contextual Info: 1  1 1 90-1 1 1 1 1 1 $+*#D#/1$21 1 1 1 123415676869AB1CDE9AD776A1 1 1 1 1 1 11 1 1 234561781918ABC1DEF97FA121121

Contextual Info: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-357C Z Rev. 3.0 May. 20,1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organize as 32768-word x 8-bit. They have realized high speed, low power consumption and high reliability by

Hitachi DSA00171

Contextual Info: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-357C Z Rev. 3.0 May. 20, 1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed, low power consumption and high reliability by

semikron skiip 33

Abstract: 202GD061-357CTV
Contextual Info: SKiiP 202GD061-357CTV .  8 &1 9       3  Absolute Maximum Ratings Symbol Conditions IGBT :" : '+ :" 6    <  ! =    8 &1 *%$+ 9 Values Units #$$ 0$$ > &$ : : : &$$ *'1$+  &$$ *'1$+ &$$$   Inverse diode SKiiP 2

Contextual Info: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-357C Z Rev. 3.0 May. 20, 1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized as

FU-675PDF-V1M36A

Abstract: FU-675PDF-V1M37A FU-675PDF-V1M38A FU-675PDF-V1M39A FU-675PDF-V1M3A FU-675PDF-V1M4A FU-675PDF-V1M5A FU-675PDF-V1M6A dfb-ld butterfly package
Contextual Info: TZ7-00-357C 1/6 June 20, 2001 Approved Approved Charged M.Sato Specification of wavelength monitor integrated DFB-LD module Module type: FU-675PDF-V1MxxA A B x Date 01.06.20 C D Approved Y.Hozumi MITSUBISHI ELECTRIC CORPORATION * Mitsubishi Electric Corp. reserves the right to change product design and specification without notice.

semikron skiip 400 gb

Abstract: 202GD061-357CTV 202GD061-357
Contextual Info: SKiiP 202GD061-357CTV I. Power section Absolute maximum ratings Symbol Ts = 25°C unless otherwise specified Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS POWERTAP & #153 II CASE 357C–03 ISSUE E DATE 01/02/2000 SCALE 1:2 –A– W 0.25 0.010 R G M T A M B M N –B– Q H 2 PL 0.25 (0.010) F –T– C E U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

ct 1875

Abstract: ct 305 1200ct ct1875
Contextual Info: INCH-POUND MIL-PRF-27/357C 5 September 2002 SUPERSEDING MIL-PRF-27/357B 14 June 1988 PERFORMANCE SPECIFICATION SHEET TRANSFORMERS, AUDIO FREQUENCY, ULTRA-MINIATURE This specification is approved for use by all Departments and Agencies of the Department of Defense.

Contextual Info: MBRP40045CTL POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

MBRP20030CTL

Abstract: b2003
Contextual Info: MOTOROLA Order this document by MBRP20030CTL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MBRP20030CTL POWERTAP II SWITCHMODE Power Rectifier Motorola Preferred Device The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following

thermafilm

Abstract: 2088AB thermasil EB107/D sync nut eb107 ierc heatsink richco Silicone Rubber 35 Shore A thermafilm 1 mhw 592
Contextual Info: AN1040/D Mounting Considerations For Power Semiconductors http://onsemi.com Prepared by: Bill Roehr APPLICATION NOTE INTRODUCTION Current and power ratings of semiconductors are inseparably linked to their thermal environment. Except for lead–mounted parts used at low currents, a heat exchanger

Contextual Info: MOTOROLA Order this document by MURP20020CT/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MURP20020CT Designer's Ultrafast Power Rectifier ULTRAFAST RECTIFIER 200 AMPERES 200 VOLTS POWERTAP II Package Features mesa epitaxial construction with glass passivation. Ideally suited

MURP20020CT

Abstract: MURP20040CT 200-ATC
Contextual Info: MURP20020CT, MURP20040CT Preferred Devices POWERTAPt II Ultrafast SWITCHMODEt Power Rectifiers These state−of−the−art POWERTAP II Ultrafast SWITCHMODE power rectifiers are designed for use in switching power supplies, inverters, and as free wheeling diodes.

2n2222 motorola

Abstract: rectifier data Schottky Power Rectifier Diode Marking 1e
Contextual Info: MOTOROLA Order this document by MBRP30060CT/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MBRP30060CT Designer's Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIER 300 AMPERES 60 VOLTS POWERTAP II Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon

Contextual Info: MOTOROLA Order this document by M B RP20030CTL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M BRP20030CTL SWITCHMODE™ S chottky Pow er R ectifier SCHOTTKY BARRIER RECTIFIER 200 AMPERES 30 VOLTS POWERTAP™ II Package . . . employing the Schottky Barrier principle in a large area m etal-to-silicon

2n22222

Abstract: 20 mf 25 metal rectifier diode
Contextual Info: MBRP20060CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: http://onsemi.com • Dual Diode Construction —

Contextual Info: MBRP30060CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output

Contextual Info: CHAPTER 3 Case Outlines and Package Dimensions http://onsemi.com 626 CASE OUTLINES AND PACKAGE DIMENSIONS AXIAL LEAD, DO−41 CASE 59−10 ISSUE S B K D F A SCALE 1:1 F DATE 01/28/2002 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.

Contextual Info: MBRP30045CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output

418B-04

Abstract: MUR3020PT 1n5822 trr MR760RL SS16 SMB MBR2 mur460
Contextual Info: Application Specific Rectifiers Table 1. Low VF Schottky Rectifiers Device IO Amps VRRM (Volts) VF @ Rated IO and TC = 25°C Volts (Max) IR @ Rated VRRM mAmps (Max) 0.5 1 1 2 1 4 8 10 20 25 25 25 25 30 40 200 400 400 600 20 20 10 10 30 10 35 35 30 35 35

Contextual Info: MBRP40045CTL POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: http://onsemi.com Features: • Dual Diode Construction — •