350V400V Search Results

IRF331

Abstract: IRF332 IRF3301 IRF333 IRF330
Contextual Info: -Standard Power MOSFETs IRF330, IRF331, IRF332, IRF333 F ile N u m b e r 1570 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

IRF331R

Abstract: IRF330R ic l00a 250M IRF332R IRF333R
Contextual Info: _ Rugged Power MOSFETs File Number 2011 IRF330R, IRF331R, IRF332R, IRF333R Avalanche Energy Rated N-Channel Power MOSFETs 4.5A a nd 5.5A, 350V-400V ros on = 1 .0 0 and 1 .5 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

2029 mosfet

Abstract: ic l00a IRFF330R IRFF331R IRFF332R IRFF333R
Contextual Info: _ Rugged Power MOSFETs File Num ber 2029 IRFF330R, IRFF331R, IRFF332R, IRFF333R Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 350V-400V rDs on = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

WO2M

Abstract: IRF330 IRF331 LM 7801 IRF332 IRF333
Contextual Info: □1 J3875081 G E SOLID STATE ¿ Ë 1 3 Û 7 S G 0 1 □□löBGM 7 W 0 1E 18304 Di T " ' 3 £H I - Standard Power MOSFETs IRF330, IRF331, IRF332, IRF333 File Number 1570 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode

RF730

Abstract: IRF733 IRF730 IRF731 IRF732 ISF730 JBF731
Contextual Info: Standard Power MOSFETs IRF730, IRF731, IRF732, IRF733 File Number 1580 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors D 4.5A and 5.5A, 350V-400V rDs on = 1.0 0 and 1.5 f i Features:

250M

Abstract: IRF320 IRF321 IRF322 IRF323 1RF322
Contextual Info: 3875081 Standard Power M O S F E Ts DE" • 3Û75001 u it 01 G E SO LI D STATE 7 [1 lö ^aö ü o F ile N u m b e r 1 5 6 9 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field>Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E

IRFF312R

Abstract: IRFF311R IRFF310R IRFF313R
Contextual Info: _ File N u m b er 2032 RuggedPowerMO IRFF310R, IRFF311R, IRFF312R, IRFF313R Avalanche Energy Rated N-Channel Power MOSFETs 1.35A and 1.15A, 350V-400V r0s on = 3.60 and 5.00 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

25x20

Contextual Info: Snap-In Aluminum Electrolytic Capacitors MUD Series FEATURES • • • • PCB Mounting, Super low profile Lengths are all 20mm, Down size High CV density Load life of 2,000 hours at 105oC SPECIFICATIONS Item Characteristic Operating Temp Range 160V-250V: -40oC to +105oC

F8222

Contextual Info: Snap-In Aluminum Electrolytic Capacitors MWC Series FEATURES • • • • • PCB Mounting, Low profile Compact size High reliability for continuous operation High CV density, high ripple current Load life of 2,000 hours at 85oC SPECIFICATIONS Item Characteristic

IRF720

Abstract: 1RF721 IRF723 t11g IRF721 IRF722
Contextual Info: 01 3875081 G E SOLID STATE D E ^ 3fl7SGûl ' 0 1E 18364 D D i a3bM 3 ~ T D\ T-39-11 Standard Power M O SFET s IRF720, IRF721, IRF722, IRF723 File Number 1579 Power MOS Field-Effect Transistors

Contextual Info: 6nap-,n$luminum MH' Series lectrolytic&apacitors   MERITEK FEATURES • PCB Mounting  More compact electronic equipment  Lengths are all 20mm, Down size  Load life of 2,000 hours at 85 C o SPECIFICATIONS Item Characteristic Operating Temp Range

Contextual Info: Snap-In Aluminum Electrolytic Capacitors MWC Series FEATURES • • • • • PCB Mounting, Low profile Compact size High reliability for continuous operation High CV density, high ripple current Load life of 2,000 hours at 85oC SPECIFICATIONS Item Characteristic

IRF322

Abstract: IRF320 250M IRF321 IRF323
Contextual Info: Standard Power MOSFETs- IRF320, IRF321, IRF322, IRF323 File Number 1569 Power MOS Field-Effect Transistors N-CHANNEL EN HANCEM ENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.5A and 3.0A, 350V-400V

IRF350R

Abstract: IRF350 IRF351R IRF352R IRF353R transistors bipolar
Contextual Info: _ Rugged Power MOSFETs File Num ber 2006 IRF350R, IRF351R, IRF352R, IRF353R Avalanche Energy Rated N-Channel Power MOSFETs 13A and 15A, 350V-400V ros on = 0 .3 0 and 0 .4 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

Contextual Info: Snap-In Aluminum Electrolytic Capacitors MUD Series FEATURES • • • • PCB Mounting, Super low profile Lengths are all 20mm, Down size High CV density Load life of 2,000 hours at 105oC SPECIFICATIONS Item Characteristic Operating Temp Range 160V-250V: -40oC to +105oC

350V400V

Contextual Info: 6nap-,n$luminum MHD Series lectrolytic&apacitors   MERITEK FEATURES • PCB Mounting  More compact electronic equipment  Lengths are all 20mm, Down size  Load life of 2,000 hours at 85 C o SPECIFICATIONS Item Characteristic Operating Temp Range

IRFD313R

Abstract: IRFD310R IRFD311R IRFD312R IRF0312
Contextual Info: _ Rugged Power MOSFETs File N u m b er 2039 IRFD310R, IRFD311R, IRFD312R, IRFD313R Avalanche Energy Rated N-Channel Power MOSFETs 0.3A and 0.4A, 350V-400V rDs on = 3.6fi and 5.0Q N-CHANNEL ENHANCEMENT MODE Features: • ■ ■ ■

IRFP350R

Abstract: cgel IRFP351R IRFP352R IRFP353R
Contextual Info: Rugged Power MOSFETs F ile N u m b e r 2017 IRFP350R, IRFP351R, IRFP352R, IRFP353R Avalanche Energy Rated N-Channel Power MOSFETs 13A and 15A, 350V-400V rDs on = 0.3Q a nd 0 .4 fi N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

irf transistors

Abstract: irf032 721a GF2D05 IRFD320R IRFD321R IRFD322R IRFD323R 721R IRF 100A
Contextual Info: Rugged Power M O SFETs_ IRFD320R, IRFD321R, IRFD322R, IRFD323R File Number 2040 Avalanche Energy Rated N-Channel Power MOSFETs 0.5A and 0.4A, 350V-400V rDS on = 1.80 and 2.50 N -C H A N N E L E N H A N C E M E N T M O D E Features:

IRF720

Abstract: IRF722 BRF721 IRF721 IRF723
Contextual Info: -Standard Power MOSFETs IRF720, IRF721, IRF722, IRF723 File Number 1579 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.5A and 3.0A, 350V-400V rDs on = 1.8 0 and 2.5 O F e a tu re s:

IRF720R

Abstract: IRF722R IRF723R IRF721R
Contextual Info: Rugged Power MOSFETs File N u m b er IRF720R, IRF721R IRF722R, IRF723R 1991 Avalanche Energy Rated N-Channel Power MOSFETs 2.5A and 3.0A, 350V-400V rDs on = 1.80 and 2.5fi Features: • Single pulse avalanche energy rated

IRF730

Abstract: IRF731 IRF733 RF733 transistor IRF730 IRF732 LMIT
Contextual Info: 3875081 G E SOL I D ST ATE T-39-11 □ 1 Standard Pow er M O S F E T s _ IRF730, IRF731, IRF732, IRF733 File Number 1580 Power MOS Field-Effect Transistors N -CH A NN EL E N H A N C E M E N T M ODE N-Channel Enhancement-Mode Power Field-Effect Transistors