350NS Search Results

2SK1258

Abstract: SC-65
Contextual Info: Power F-MOS FET 2SK1258 2SK1258 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON re sistan c e RDb on : RDS (on) l = 0 . 0 2 i l (typ.) • High sw itching ra te : t( = 350ns (typ.) • No secondary breakdow n Unit: mm 25.5max.

CAT28LV65

Contextual Info: P relim inary CAT28LV65 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: - 250/300/350ns ■ Automatic Page Write Operation: - 1 to 32 Bytes in 5ms - Page Load Timer ■ Low Power CMOS Dissipation:

CAT28LV64

Contextual Info: P relim inary CAT28LV64 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6 V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: - 250/300/350ns ■ Automatic Page Write Operation: - 1 to 32 Bytes in 5ms - Page Load Timer ■ Low Power CMOS Dissipation:

CAT28LV65

Contextual Info: Preliminary CAT28LV65 64K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: - 250/300/350ns ■ Automatic Page Write Operation: - 1 to 32 Bytes in 5ms - Page Load Timer ■ Low Power CMOS Dissipation: - Active: 8 mA Max.

Contextual Info: PYA28C256 32K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 300 µA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs

nec 2716 eprom

Abstract: 2364 eprom NEC 2732 pin diagram of ic 2764 pin diagram of ic 2732 2732 rom 2732 eprom Electronic Arrays 2732 memory chip ROM 2764
Contextual Info: NEC NMUS juPD2364 NEC Electronic U.S.A. Inc. Electronic A rrays Division READ ONLY MEMORY 8192 WORDS, 8 BITS/WORD FEATURES: GENERAL DESCRIPTION: • Three Fast Access Times -450nsec -350nsec -300nsec • All Inputs and Outputs TTL Compatible • Single +5V ± 10% Power Supply

XL2804A-250

Abstract: XL2804A-300 XL2804A-350 XL2804A-450 XL2804A 16L06
Contextual Info: EXEL - XL2804A MICROELECTRONICS, INC. . 512 X 8 Electrically Erasable P R O M PIN CONFIGURATION FEATURES • Fast Read Access Times — 250ns, 300ns, 350ns, 450ns 24 Pin PDIP Type "P" Package J ■ 5 Volt-only Operation

CAT28LV65

Abstract: PARALLEL E2PROM
Contextual Info: Preliminary CAT28LV65 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: ■ Automatic Page Write Operation: – 1 to 32 Bytes in 5ms – Page Load Timer – 250/300/350ns ■ Low Power CMOS Dissipation:

1A31A

Abstract: C804B V/HC-804
Contextual Info: BURR-BROliJN CORP HE D I B U R R -B R O W N * 173]i3bS [1014547 5 I SHC803BM, CM SHC804BM, CM [ Ultra-High Speed SAM PLE/H O LD AMPLIFIER FEATU RES D E S C R IP T IO N • 350nsec max ACQUISITION TIM E The SHC803 and SHC804 are high speed sample/ hold amplifiers designed for use in fast 12-bit data

m2716a

Contextual Info: £ ÿ j SGS-THOMSON D»i LI(gï[si(ô RiD(gl M2716 N M O S 16K (2K x 8) UV EPROM • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns - SINGLE 5V SUPPLY VOLTAGE - STATIC-NO CLOCKS REQUIRED

CAT28LV64

Abstract: 28LV64 28LV64-25
Contextual Info: Preliminary CAT28LV64 Preliminary CAT28LV64 64K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6 V Supply ■ Commercial and Industrial Temperature Ranges ■ Read Access Times: ■ CMOS and TTL Compatible I/O – 250/300/350ns ■ Automatic Page Write Operation:

2364

Abstract: A12CE SMM2364C pf051 SMM2364
Contextual Info: PF051-05 SMM2364C CMOS 64K-BIT MASK ROM •L o w Supply Current •A ccess Time 350ns/450ns #8,192 Words X 8 Bits Asynchronous • DESCRIPTION The SMM2364C is an 8,192 words X 8 bits asynchronous, static, mask programmable ROM on a monolithic CMOS chip and is characterized by fast access time and very low power dissipation. The nature "static”

B2716

Abstract: m2716 FDIP24W M271616
Contextual Info: M2716 16 Kbit 2Kb x 8 NMOS UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE

ADC1130

Abstract: ADC1131 HI508A HTS-0010 SHA1144 analog devices "902-2"
Contextual Info: Very High Speed ADSHM-5 2nd Source-Replaces All SHM-5 Series Fast 350ns Acquisition Time to ±0.01% Aperture Uncertainty 250ps ADSHM-5K Ultra Fast 250ns Acquisition Time to ±0.01% 100ns Acquisition Time to ±0.1% Wide 12MHz Bandwidth 300V|is Slew Rate Super Low 2nA Input Bias Current

PYA28C16

Abstract: eeprom
Contextual Info: PYA28C16 2K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write 200µs or 1 ms Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional)

PYA28C64

Abstract: eeprom
Contextual Info: PYA28C64 X 8K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Fast Write Cycle Time CMOS & TTL Compatible Inputs and Outputs

Contextual Info: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C ●General Description The BM6103FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 350ns, and minimum input

12KV

Abstract: 2PF140 motorola 350NS
Contextual Info: RECTIFIER, 12kV, 225mA, 350ns January 7, 1998 1997 SEMTECH CORP. 2PF140 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com 652 MITCHELL ROAD NEWBURY PARK CA 91320 RECTIFIER, 12kV, 225mA, 350ns 2PF140 January 7, 1998 © 1997 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320

Contextual Info: XL2865A 8K X 8 Electrically Erasable PROM PIN CONFIGURATION FEATURES 28 Pin PDIP Type "P" Package • Fast Read Access Times — 250ns, 300ns, 350ns, 450ns , ■ 5 Volt-only Operation ■ Industrial Temperature Range Available XLE2865A ■ Fast Nonvolatile Write Cycle

2864A

Contextual Info: eXe L MICROELECTRONICS noC A A XLZO O H A M k n l.f' 8K X 8 Electrically Erasable PROM FE A TU R ES • Fast Read A ccess Tim es — 250ns, 300ns, 350ns, 450ns ■ 5 V o lt-o nly O peratio n Including W rite ■ ■ ■ Industrial T em p e ra tu re R ange A vailab le

1N914

Abstract: FDIP24W M2716
Contextual Info: M2716 NMOS 16K 2K x 8 UV EPROM 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM

SM2716

Contextual Info: Æ T S C S -T H O M S O N M2716 M W & i( O T K !]D ( g S NMOS 16K (2K x 8 UV EPROM • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED

PYA28C256

Contextual Info: PYA28C256 32K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 300 µA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs

B2716

Abstract: FDIP24W M2716 m2716 dip M2716* eprom
Contextual Info: M2716 NMOS 16K 2K x 8 UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM