35 W 960 MHZ Search Results

Contextual Info: Power Amplifiers KU PA 092096-35 A, Power Amplifier 920 . 960 MHz • 35 W Preliminary technical data Features • LDMOS-technology • High efficiency • Monitor output for forward power detection DC voltage Applications • Analog and digital transmission systems

T119 A

Abstract: sot 122 SOT123 Package BLW78
Contextual Info: 63 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 - 960 MHz cont. Load Power (W) @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 35* 50 50* 150(PEP)* 7* 8.5 8.1* 7.5* 24 26 26 26 Package Outline Load Power (W) @ 108 MHz Power Gain

T35 diode

Abstract: power diode T35-4 diode T35 -4-D6 T35-4 diode
Contextual Info: Afifacm w an A M P com pany Wireless Bipolar Power Transistor, 35W 850 - 960 MHz PH0810-35 V2.00 Features • • • • • • .975 2 4 .7 7 .725 _ (18,42) D esigned for L inear A m plifier A pplications Class AB: -30dBc Typ 3rd IMD at 15 W atts PEP

Contextual Info: S G S -T H O M S O N :IL[i g?GMD § SD1530-01 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • DESIG NED FOR HIGH POWER PULSED IFF, DME, TACAN APPLIC ATIO N S ■ . ■ . 40 W ATTS (typ. IFF 1030 - 1090 MHz 35 W ATTS (min.) DME 1025 - 1150 MHz 25 W ATTS (typ.) TACAN 960 - 1215 MHz

s8vt-f48024e

Abstract: S8VT-F12024E
Contextual Info: M03E-EN-02B+S8VT+Datasheet.fm Seite 1 Montag, 8. Juni 2009 3:35 15 Switch Mode Power Supply S8VT 120/240/480/960 W Models Natural Cooling Three-phase Power Supply Range from 5A up to 40A with Output Voltage of 24VDC • 3 phase 400 to 500 VAC • 5, 10, 20 and 40 A; 24 VDC output

SO42

Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
Contextual Info: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002

100B100JW500X

Contextual Info: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution

j0947

Abstract: AGR09090EF JESD22-C101A ZX18 ZO 109 wa 100B100JW500X
Contextual Info: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution

35 W 960 MHz RF POWER TRANSISTOR NPN

Abstract: TP3034 2779, transistor transistor j8 j8 er capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3034 The RF Line NPN Silicon RF Power Transistor The TP3034 is designed for 960 MHz cellular radio base stations in both analog and digital applications. It incoporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and

AGR09090EF

Abstract: JESD22-C101A ZX18 grm40x7r103k100al
Contextual Info: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution

100B120JW500X

Abstract: grm40x7r103k100al 100B470JW500X 100B100JW500X
Contextual Info: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution

Contextual Info: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 921 MHz—960 MHz, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution

Contextual Info: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution

Contextual Info: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched GOLDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Thermally-enhanced

a2324

Abstract: H-37260-2 elna 50v LM7805 05 BCP56 LM7805 PTFA092201E PTFA092201F RO4350
Contextual Info: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced

Contextual Info: MOTOROLA Order this document by TP3034/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3034 The TP3034 is designed for 960 MHz cellular radio base stations in both analog and digital applications. It incoporates high value emitter ballast

elna 50v

Abstract: BCP56 LM7805 PTFA092201E PTFA092201F RO4350
Contextual Info: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced

940 629 MOTOROLA

Abstract: HDR2X10 DB4140
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations, uses Motorola’s newest High Voltage 26 Volts LDMOS IC technology, and

Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 1/2005 Will be replaced by MHVIC910HNR2 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MHVIC910HR2 921 MHz - 960 MHz SiFET

OZ 960 S

Abstract: 10149 OZ 960 G200 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM gsm amplifier
Contextual Info: PTF 10149 70 Watts, 921–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10149 is an internally matched 70–watt GOLDMOS FET intended for cellular and GSM amplifier applications from 921 to 960 MHz. It operates with 50% efficiency and 16 dB typical gain.

diode SKE 1/10

Abstract: G200 0509L OZ 960 S
Contextual Info: PTF 10020 125 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 10020 is an internally matched, 125–watt GOLDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. This device operates with 55% efficiency and 12.5 dB gain.

Contextual Info: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power ampliier

35 W 960 MHz RF POWER TRANSISTOR NPN

Abstract: TRANSISTOR 618 J1 TRANSISTOR 1090 35 W 960 MHz MAPRST0912-350 1215 transistor j08
Contextual Info: MAPRST0912-350 AVIONICS PULSED POWER TRANSISTOR 350 Watts, 960 - 1215 MHz, 10 s Pulse Width, 10% Duty Cycle Preliminary Specification, Rev 02/03/2004 FEATURES OUTLINE DRAWING ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation

HDR2X10STIMCSAFU

Abstract: MHVIC910HR2 J559
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHVIC910HR2/D SEMICONDUCTOR TECHNICAL DATA The RF Line Freescale Semiconductor, Inc. 921 MHz − 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations,