35 TEMP Search Results

TVA0600N09W3

Abstract: TVA0300N09W3 TVA0300N07W3 tva0300n07 MC0023 TVA0300N05W3 TVA0300N09W3 EMC TVA0600N09 tva0300n09 TVA0600N07W3
Contextual Info: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: TVA-DKIT DESCRIPTION: : TEMPERATURE VARIABLE CHIP ATTENUATOR DESIGN KIT. 1 THERMOPAD SELECTION TOOL CD 35 PCS TVA0100N09W3 35 PCS TVA0100N07W3 35 PCS TVA0100N05W3 1 EMC CATALOG 35 PCS TVA0200N09W3 35 PCS TVA0200N07W3

MTVA0300N09

Abstract: MTVA0400N07W3 MTVA0600N09 HTVA0300N04 HTVA0600N04 MTVA0400N05W3 MTVA0300N05W3 MTVA0300N07W3 MTVA0600N05W3 MTVA0300N07
Contextual Info: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: MTVA-DKIT DESCRIPTION: : TEMPERATURE VARIABLE CHIP ATTENUATOR DESIGN KIT. 1 THERMOPAD SELECTION TOOL CD 35 PCS MTVA0100N03W3 35 PCS MTVA0100N04W3 35 PCS MTVA0100N05W3 35 PCS MTVA0200N05W3 1 EMC CATALOG

GSM intercom circuit diagram

Abstract: sharc ADSP-21xxx architecture sharc ADSP-21xxx general block diagram sharc 21xxx architecture block diagram sharc ADSP-21xxx ADSST-DAP-EVAL01 fingerprint scanner circuit ADSP-21060 1994 MIP FLOAT LEVEL SWITCH NAT 40 reliance electric 20 hp DC motor drives
Contextual Info: 35 DSP Selection Guide 2001 Edition 19:30:35 18:30:35 12:30:35 11:30:35 09:30:35 02:30:35 01:30:35 23:00:35 19:30 Table of Contents Introduction to ADI DSPs 16-Bit DSP Key Products 32-Bit DSP Key Products ADI DSP Overview Markets & Applications Key Benefits

35-16A

Abstract: 3508a 3516A 35-12a DO-203 dsai do-203 weight DSI35 DSAI 35-16A DSAI 35-12A
Contextual Info: Rectifier Diodes Avalanche Diodes DS 35 DSI 35 IFRMS = 80 A DSA 35 DSAI 35 IFAVM = 52 A VRRM = 800 - 1800 V VRSM VBRmin ① VRRM Anode Cathode on stud on stud V V V 900 1300 - 800 1200 DS 35-08A DS 35-12A DSI 35-08A DSI 35-12A 1300 1700 1900 1300 1750 1950

Filtres pour montage en surface

Abstract: Surface mount filters condensateur ceramique 104 FCMS35 EFD CAPACITOR v10471 cfcms35 1001PI condensateur 102
Contextual Info: Sommaire Summary Filtres pour montage en surface Surface mount filters Modèle / Format FCMS 35 Page s Model / Size 72 - 73 FCMS 35 CFCMS 35 CFCMS 35 HI 74 CFCMS 35 CFCMS 35 HI FCMS 40 - 60 - 100 75 FCMS 40 - 60 - 100 FCMS 35 SURFACE MOUNT FILTERS FILTRES POUR

Contextual Info: DS 35 DSA 35 Rectifier Diodes Avalanche Diodes V RSM V BR min ① V RRM DSI 35 DSAI 35 VRRM = 800 - 1800 V IF(RMS) = 80 A I F(AV)M = 49 A Anode DO-203 AB Cathode V V V on stud C 900 1300 - 800 1200 DS 35-08A DS 35-12A DSI 35-08A DSI 35-12A A 1300 1700 1900

Contextual Info: Single Phase Rectifier Bridge PSB 35 IdAVM= 35 A VRRM= 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM (V) 800 1200 1400 1600 1800 Type + PSB 35/08 PSB 35/12 PSB 35/14 PSB 35/16 PSB 35/18 ~ ~ - Symbol Test Conditions IdAVM IFSM TC = 85 °C,

Contextual Info: A 35.35 29.95 3x8=24 150°C MAX PPE 38.00 76.00 TBGA 35×35 35.35 A' 38.00 24.50 266 315.0 322.6 SECTION A-A' 6.12 (6.35) 35.35 7.62 135.9 UNIT : mm Applied Package Quantity (pcs) 352-pin Plastic TBGA 35 × 35 420-pin Plastic TBGA 35 × 35 480-pin Plastic TBGA 35 × 35

IXYS VUO 30

Contextual Info: VUO 35 IdAVM = 38 A VRRM = 800-1800 V Three Phase Rectifier Bridge VRRM VRSM V V 800 1200 1400 1600 1800 900 1300 1500 1700 1900 + + Type - ~ ~ ~ VUO 35-08NO7 VUO 35-12NO7 VUO 35-14NO7 VUO 35-16NO7 VUO 35-18NO7* ~ – ~ ~ * delivery time on request Symbol

diode ms 22

Contextual Info: VUO 35 IdAVM = 38 A VRRM = 1200-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 600 1200 1400 1600 1800 600 1200 1400 1600 1800 + Type VUO 35-06NO7 VUO 35-12NO7 VUO 35-14NO7 VUO 35-16NO7 VUO 35-18NO7* + - ~ ~ ~ ~ – ~ ~ * delivery time on request Symbol

transistor G28

Abstract: Transistor g29 ZM100 FERRANTI ELECTRONICS SD16 ZM110 ZM210 2856K
Contextual Info: ELECTRICAL CHARACTERISTICS c PHOTO TRANSISTOR ELECTRICAL CHARACTERISTICS Illum ination Dark Leakage Dice Type ZM100 ZM110 ZM210 V ceo V cB O Min. Current M ax. V V ma 35 35 35 35 35 35 1.0 0.025 0.10 Min. < M in. Sensitivity (Note 1) @ V c e @ lc V Max.

Contextual Info: VUO 35 IdAVM = 38 A VRRM = 1200-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 600 1200 1400 1600 1800 600 1200 1400 1600 1800 + Type VUO 35-06NO7 VUO 35-12NO7 VUO 35-14NO7 VUO 35-16NO7 VUO 35-18NO7* + - ~ ~ ~ ~ – ~ ~ * delivery time on request Symbol

35-16NO7

Abstract: pwm INVERTER 3 phase 400 hz 35-14NO7 DC TO 400 HZ INVERTER
Contextual Info: VUO 35 IdAVM = 38 A VRRM = 1200-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 600 1200 1400 1600 1800 600 1200 1400 1600 1800 + Type VUO 35-06NO7 VUO 35-12NO7 VUO 35-14NO7 VUO 35-16NO7 VUO 35-18NO7* + - ~ ~ ~ ~ – ~ ~ * delivery time on request Symbol

Contextual Info: VUO 35 IdAVM = 38 A VRRM = 1200-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 600 1200 1400 1600 1800 600 1200 1400 1600 1800 + Type VUO 35-06NO7 VUO 35-12NO7 VUO 35-14NO7 VUO 35-16NO7 VUO 35-18NO7* + - ~ ~ ~ ~ – ~ ~ * delivery time on request Symbol

Contextual Info: HM6207H Series 262,144-word x 1-bit High Speed CMOS Static RAM HITACHI Pin A rrangem ent HM6207HP-25 25 ns HM6207HP-35 35 ns HM6207HP-45 45 ns HM6207HLP-25 25 ns HM6207HLP-35 35 ns HM6207HLP-45 45 ns HM6207HJP-25 25 ns HM6207HJP-35 35 ns HM6207HJP-45 45 ns

3516 bridge rectifier

Abstract: E6 DIODE A three-phase diode bridge rectifier
Contextual Info: DB 35-005 . DB 35-16 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module 45 Square bridge Three-Phase Si-Bridge Rectifiers DB 35-005 . DB 35-16 Forward Current: 35 A

Contextual Info: MwT-H16 28 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 241 72 50 35 52 52 35 35 52 35 1067 52 35 52 35 50 • 28 dBm POWER OUTPUT AT 12 GHz • 11 dB GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE

SOLAR TRANSISTOR

Abstract: High Power Microwave Device
Contextual Info: MwT-H16 32 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 241 72 50 35 52 52 35 35 52 35 1067 52 35 52 35 50 • 28 dBm POWER OUTPUT AT 12 GHz • 11 dB GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE

MwT-16

Abstract: FPH16
Contextual Info: MwT-16 26 GHz High Power GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 241 72 50 35 52 52 35 35 52 35 1067 52 35 52 35 50 CHIP THICKNESS = 125 MICRONS All Dimensions in Microns • 0.5 WATT POWER OUTPUT AT 12 GHz • +39 dBm THIRD ORDER INTERCEPT

PSD 35

Contextual Info: Three Phase Rectifier Bridges PSD 35 IdAVM VRRM = 38 A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 35/08 PSD 35/12 PSD 35/14 PSD 35/16 PSD 35/18 ~ ~ ~ Symbol Test Conditions IdAVM IFSM TC = 85°C, module

PSB 35

Abstract: REC 670 135 557 diode
Contextual Info: Single Phase Rectifier Bridge PSB 35 IdAVM VRRM = 35 A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM (V) 800 1200 1400 1600 1800 Symbol IdAVM IFSM ∫ i dt 2 TVJ TVJM Tstg VISOL Type PSB PSB PSB PSB PSB + 35/08 35/12 35/14 35/16

Contextual Info: Three Phase Rectifier Bridges PSD 35 IdAVM = 38 A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 35/08 PSD 35/12 PSD 35/14 PSD 35/16 PSD 35/18 Symbol Test Conditions IdAVM IFSM T C = 85°C, module

1N914 pspice

Abstract: 1N4148 pspice 1N4148 SMA 1N4004 SMB 1N4148 JAN Diode 1N4004 SMA JAN 1N4148 1N4148 smc ss14 diode DIODE 1N4004
Contextual Info: Discrete Temperature range Software version Revision date 1N3064 DO-35-2 Electrical 25°C N/A N/A 1N4004 DO-41-2 Electrical 25°C 6.0 Jul 05, 2002 1N4148 DO-35-2 Electrical 25°C 6 Jan 01, 1994 1N4149 DO-35-2 Electrical 25°C N/A N/A 1N4150 DO-35-2 Electrical

byp 660

Contextual Info: Diotec BYP 70/35 . BYP 79/35 Silicon Press-Fit-Diodes High-temperature diodes Silizium-Einpreßdioden Hochtemperaturdioden Nominal current – Nennstrom Ø 12.7 35 A Ø 10 Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.3 50.400 V