3400 TRANSISTOR Search Results

smd transistor 3400

Abstract: smd transistor equivalent table J412 - TRANSISTOR SMD BLF6G38S-25 C5750X7R1H106M cdma QPSK modulation Walsh pilot BLF6G38-25 C4532X7R1H475M RF35 722 smd transistor
Contextual Info: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 — 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC3825N Rev. 1, 11/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC3825N wideband integrated circuit is designed with on-chip matching that makes it usable from 3400 - 3600 MHz. This multi - stage

NEDA 1604 battery 6f22

Abstract: NEDA 1604 6F22 006P operating manual for NEDA 1604 6F22 NEDA 1604 6F22 JIS 006P battery BATTERY 9V 2712 diode
Contextual Info: Data Sheet Auto Ranging Tool Kit DMM Model 2705B Specifications model 2705B A ut o/ Manual Ranging Select between Auto or Manual ranging The 2705B is a full-featured auto-ranging DMM that combines performance, value and functionality. The 3400 count LCD can display resistance values up to

3134-180P

Contextual Info: 3134-180P Rev.C 3134-180P 180W PSM - PLUG AND PLAY - For S-Band Pulsed Radar Application 180 Watts - 100µs, 10%, 36V S-Band Pulsed Radar 3100 - 3400 MHz • • • • Easy To Use – 50 Ω Plug-and-Play Reduce Design Cycle Time Improve System Performance

intel ck505 clock specification

Abstract: Mobile Intel PM55 Express intel g41 motherboard circuit block diagram downs intel chipset 845 motherboard repair circuit Intel 3400 17221c g31 motherboard repair intel h55 Intel hm55 intel chipset g31 motherboard repair
Contextual Info: Intel 5 Series Chipset and Intel® 3400 Series Chipset Datasheet June 2010 Document Number: 322169-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS

transistor SMD g 28

Contextual Info: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 3 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.

TRANSISTOR cBC 449

Abstract: gt 1141 transistor GT 1083 A1280-1 TRANSISTOR CATALOG sot 404 NPN/cbc 639
Contextual Info: MCH4020 Ordering number : ENA1280A SANYO Semiconductors DATA SHEET MCH4020 NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=16GHz typ (VCE=5V)

MSM 7227

Abstract: FU 9024 N Panaflo fbk TPV 3100 p9712 panaflo fba06t24h fu 9024 MSM 8260 FBA08A24H FBA09A24H
Contextual Info: SECTION REFERENCE INDEX Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . . . . . . . . . 20-279 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . . . . . 280-622 Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 623-654

Contextual Info: Am79M576A Advanced Micro Devices Metering Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • ■ Programmable constant resistance feed ■ Programmable loop detect threshold ■ Two-wire impedance set by single external impedance ■ Ground-key detect

RQG1003UQAQF

Abstract: 1307 TRANSISTOR equivalent RQG1003UQ-TL-E SC-82AB
Contextual Info: RQG1003UQAQF NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier REJ03G1538-0100 Rev.1.00 Jul 20, 2007 Features • Ideal for LNA applications. e.g. Tuner, Wireless LAN Cordless phone and etc. • High gain and low noise. MSG = 26 dB typ., NF = 0.55 dB typ. at VCE = 2 V, IC = 10 mA, f = 0.9 GHz

Contextual Info: AD VAN C E INFOR M ATIO N Advanced Micro Devices Am79HM53 High-Level Metering Subscriber Line interface Circuit DISTINCTIVE CHARACTERISTICS • Program m able con stant curre nt feed ■ Program m able loop detect thresh old ■ G round-key detect ■ Low stan dby power

HPA VJ

Contextual Info: FINAL a Am79533l/Am79534l Advanced Micro Devices Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant current feed ■ On-chip switching regulator for low power dissipation ■ Programmable loop detect threshold ■ Two-wire impedance set by single external

PT139

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1744TP SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The µ PA1744TP is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.

Contextual Info: Freescale Semiconductor Technical Data MMG3002NT1 Rev. 3, 1/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3002NT1 Broadband High Linearity Amplifier The MMG3002NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A,

Contextual Info: P R E L IM IN A R Y Advanced Micro Devices Am79M570/Am79M574 Metering Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ Programmable constant resistance feed Programmable loop detect threshold Ground-key detect Low standby power

1812C105KAT2A

Abstract: C1206C104KRAC7800 600L270 7737 transistor CAPACITOR SPRAGUE 0149 Transistor s-parameter 600L270JT200 RO3210 RF Transistor s-parameter at 4GHz J1101
Contextual Info: T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and commercial communication systems –– General Purpose RF Power –– Jammers –– Radar –– Professional radio systems –– WiMAX –– Wideband amplifiers

Contextual Info: a Am79571 / Am79573/Am79574 Advanced Micro Devices Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Program m able constant resistance feed ■ G round-key detect option available ■ Line-feed characteristics independent of battery variations

AVX 6295

Abstract: 239 avx ML200C A113 A114 A115 AN1955 MMG3003NT1 A 118827 0805K680JBT
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MMG3003NT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally

Contextual Info: FIN AL AMDÌ1 Am79512/4 Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant-current feed ■ Programmable loop-detect threshold Line feed characteristics independent of battery variations ■ On-chip switching regulator for low-power

NTE2638

Contextual Info: NTE2638 Silicon NPN Transistor Darlington Features: D High Voltage, High Forward and Clamped Reverse Energy D 10A Peak Collector Current D 80W at +25°C Case Temperature D Collector–Emitter Sustaining Voltage: 400V Min at 7A Absolute Maximum Ratings: TC = +25°C unless otherwise specifieid

SSB Modulator

Abstract: 4GHZ FM MODULATOR SSB Modulator application note germanium transistor pnp SSB Modulator DESIGN AD9779 ADF4110 ADF4111 ADF4112 ADF4113
Contextual Info: 3000 MHz to 4000 MHz Quadrature Modulator ADL5374 FEATURES Output frequency range: 3000 MHz to 4000 MHz Modulation bandwidth: >500 MHz 3 dB 1 dB output compression: 12.0 dBm @ 3500 MHz Noise floor: −159.6 dBm/Hz @ 3500 MHz Sideband suppression: −50 dBc @ 3500 MHz

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: a Am79M531 /Am79M535 Advanced Micro Devices Metering Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant current feed Ground-key detect ■ Line-feed characteristics independent of battery variations IWo-wIre impedance set by single external

DA79

Abstract: Z/tip+431+transistor
Contextual Info: Am79M535 Metering Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant-current feed ■ Ground-key detect ■ Line-feed characteristics independent of battery variations ■ Two-wire impedance set by single external impedance