34 SOT363 Search Results

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

IRF5505

Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
Contextual Info: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT

SMC1602

Abstract: SN7002DW c3231 Q2576 r2561 C3239 C3303 C2651 C5060 U4900
Contextual Info: 8 6 7 C B A PAGE PDF 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 2 3

1PS74SB43

Abstract: sod87 Melf 1PS75SB45 1PS59SB20 1PS76SB21 1PS59SB10 1PS76SB17 1PS59SB21 1PS79SB62 BAS70
Contextual Info: Semiconductors Date of release: February 2005 Schottky barrier diodes portfolio General purpose Schottky barrier diodes 100 25 SOD80C SOD68 SOT346 MiniMelf (DO-34) (SC-59) SOT23 Surface Leaded glass Plastic SMD Plastic SMD Plastic SMD Plastic flat lead 260

Contextual Info: FMM5317ZW Single Pole Double Throw Switch 2.4 GHz Wireless LAN Transmit / Receive Applications FEATURES • • • • • High Input P0.1dB: +34 dBm Typ Low Insertion Loss: 0.55 dB Typ at 2.4 GHz High Isolation: 25 dB Typ at 2.4 GHz GaAs PHEMT technology

label infineon barcode

Abstract: barcode label infineon E6327 SC-75
Contextual Info: Package Information Tape and Reel DIN IEC 286-3 34 5 Please consult your nearest Infineon sales offices (see list of addresses) if you have any queries relating to additional dimensions, dimensional tolerances or variations. 345 Data Book 1 2000-09-01 Package Information

AN01

Abstract: wireless switch transmit receive sc70 marking 06 rf
Contextual Info: FMM5317ZW Single Pole Double Throw Switch Wireless LAN / WiMAX Transmit / Receive Applications FEATURES • • • • • High Input P0.1dB: +34 dBm Typ Low Insertion Loss: 0.55 dB Typ at 2.4 GHz High Isolation: 25 dB Typ at 2.4 GHz GaAs PHEMT technology

design ideas

Abstract: sod110 land BP317 SC-89
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210

xg1015-SE

Abstract: XG1015-SE-0G00 XG1015-SE LNA G1015-SE XG1015-SE-0G0T XG1015 NF50 G1015S
Contextual Info: 0.1-3.5 GHz GaAs pHEMT Current Adjustable, Low Noise Amplifier G1015-SE January 2010 - Rev 06-Jan-10 Features Single Voltage Supply 3V ~ 5V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure, NF < 1 dB High Linearity, OIP3 > 34 dBm @ 2 GHz

Contextual Info: Preliminary ES/EMM5327ZW Single Pole Double Throw Switch 2.4 GHz Wireless LAN Transmit / Receive Applications FEATURES • • • • • High Input P0.1dB: 34 dBm Typ Low Insertion Loss: 0.45 dB Typ at 2.4 GHz High Isolation: 25 dB Typ at 2.4 GHz GaAs PHEMT technology

wireless on off switch

Contextual Info: Preliminary ES/EMM5317ZW Single Pole Double Throw Switch 2.4 GHz Wireless LAN Transmit / Receive Applications FEATURES • • • • • • High Input P0.1dB: 34 dBm Typ Low Insertion Loss: 0.45 dB Typ at 2.4 GHz High Isolation: 25 dB Typ at 2.4 GHz GaAs PHEMT technology

wireless switch diagram

Abstract: wireless on off switch
Contextual Info: Preliminary ES/EMM5327ZW Single Pole Double Throw Switch 2.4 GHz Wireless LAN Transmit / Receive Applications FEATURES • • • • • • High Input P0.1dB: 34 dBm Typ Low Insertion Loss: 0.45 dB Typ at 2.4 GHz High Isolation: 25 dB Typ at 2.4 GHz GaAs PHEMT technology

Contextual Info: Preliminary ES/FMM5320ZW Single-Pole Double-Throw Switch GaAs PHEMT High Power Switch DC - 2.0 GHz FEATURES • • • • • • Low Insertion Loss: 0.45 dB at 2GHz Low voltage operation: 2.5 V Low Harmonics: -70 dBc at +34 dBm High Isolation: 20 dB at 2 GHz

Contextual Info: MAAL-010704 Low Noise Amplifier 0.1-3.5 GHz Features •        Single Voltage Supply 3V ~ 5V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure High Linearity OIP3, 34 dBm @ 2 GHz

r4363

Abstract: L9141 NTC 16D-7 MXM pinout C4253 PP2102 d7810 imac MLB ntc 10d-7 PP1013
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M72-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 34 503014 ENGINEERING RELEASED

Contextual Info: PRELIMINARY DATA SHEET L,S BAND HIGH POWER SPDT GaAs MMIC SWITCH UPG2009TB OUTLINE DIMENSIONS Units in mm FEATURES • HIGH POWER: PIN (0.1 dB) = +34 dBm TYP PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.25 dB TYP at f = 1 GHz LINS = 0.40 dB TYP at f = 2.5 GHz

MAAL-010704

Abstract: MAAL-010704-001SMB M513 NF50 R110 maal0107
Contextual Info: MAAL-010704 Low Noise Amplifier 0.1-3.5 GHz Features •        Single Voltage Supply 3V ~ 5V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure High Linearity OIP3, 34 dBm @ 2 GHz

marking g2u

Abstract: SW sot-363
Contextual Info: PRELIMINARY DATA SHEET L,S BAND HIGH POWER SPDT GaAs MMIC SWITCH UPG2009TB OUTLINE DIMENSIONS Units in mm FEATURES • HIGH POWER: PIN (0.1 dB) = +34 dBm TYP PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.25 dB TYP at f = 1 GHz LINS = 0.40 dB TYP at f = 2.5 GHz

SOT128

Abstract: transistor 115 BZA100 delta pinning SC-75 SC-76 SC-89 SO20 13 53 111
Contextual Info: Philips Semiconductors Small-signal Transistors and Diodes PACKAGE PRODUCTS SC-59 SOT346 Diodes and Transistors SOD68 (DO-34) 115 8 mm tape and reel, T1 180/7 125 8 mm tape and reel, T2 180/7 Diodes and Transistors 10000 135 8 mm tape and reel, T1 286/111⁄4

Contextual Info: PRELIMINARY DATA SHEET L,S BAND HIGH POWER SPDT GaAs MMIC SWITCH UPG2009TB OUTLINE DIMENSIONS Units in mm FEATURES • HIGH POWER: PIN (0.1 dB) = +34 dBm TYP PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.25 dB TYP at f = 1 GHz LINS = 0.40 dB TYP at f = 2.5 GHz

Contextual Info: MAAL-010704 Low Noise Amplifier 0.1-3.5 GHz Features •        Single Voltage Supply 3V ~ 5V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure High Linearity OIP3, 34 dBm @ 2 GHz

sot-363 n-channel mosfet

Abstract: GD 363 A2 N-Channel n-channel mosfet transistor TSM1412 SOT363 44
Contextual Info: TSM1412 Preliminary 20V N-Channel MOSFET SOT-363 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 34 @ VGS = 4.5V 3 38 @ VGS = 2.5V 3 44 @ VGS = 2.0V 3 Block Diagram ● Advance Trench Process Technology

C6073

Abstract: SIL1178 c6074 C9013 NEC C3568 c4793 c5885 K769 C6090 15B1 zener diode
Contextual Info: 8 6 7 REV STD D PDF CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

power transistors table

Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
Contextual Info: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,