330MIL Search Results

PCN10023

Abstract: Simtek STK14C
Contextual Info: Simtek Corporation 4250 Buckingham Drive, Suite 100 Colorado Springs CO 80907 USA Fax: 719 531 9481 Tel: 719 531 9444 www.simtek.com Product Change Notification PCN10023 Dated: 24 August 2005 ISSUE Lot to lot variation in Moisture Sensitivity Level performance at 260C in 28 lead, 330mil SOIC package and 28/32

SOIC28

Abstract: SOIC-28
Contextual Info: Conv DIL28/SOIC28 Z 330 - универсальный адаптер для микросхем в корпусе SOIC28 c ZIF колодкой, ширина корпуса 330mil. http://www.elnec.com/pics/convert/con0145b.jpg

AS6C6264

Abstract: 6264 SRAM AS6C6264-55PCN SRAM 6264
Contextual Info: February 2007 AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product

BS62UV256

Abstract: BS62UV256DC BS62UV256PC BS62UV256PI BS62UV256SC BS62UV256SI BS62UV256TC BS62UV256TI
Contextual Info: Ultra Low Power CMOS SRAM 32K X 8 bit BS62UV256 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.8V ~ 3.6V y Ultra low power consumption : VCC = 2.0V Operation current : 15mA Max. at 150ns

AS6C62256-55PCN

Abstract: AS6C62256-55SIN AS6C62256
Contextual Info: February 2007 AS6C62256 32K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time : 55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product

GLT6200L080LLI-70ST

Contextual Info: GLT6200L08/M08/N08 ADVANCED 256K x 8 Super Low Power & Low Voltage SRAM FEATURES ◆ Organization: 256K x 8 ◆ Low Data Retention Voltage: 1.5 V min ◆ Power Supply Voltage ◆ Maximum 2 µA Standby Current ◆ Three-state output status and TTL compatible

1N5817

Abstract: M40Z111 M4Z28-BR00SH1 M4Z32-BR00SH1 SOH28
Contextual Info: M 4 0 Z 111 M 4 0 Z 111V NVRAM CONTROLLER for up to TWO LPSRAM • CONVERT LOW POWER SRAMs into NVRAMs ■ PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY ■ AUTOMATIC WRITE-PROTECTION when Vcc is OUT-OF-TOLERANCE ■ CHOICE of SUPPLY VOLTAGES and

44-PIN

Abstract: M48T129V M48T129Y
Contextual Info: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and

Contextual Info: HY62256B-I Series “H Y U N D A I 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

HY53C464LS

Abstract: HY53C464
Contextual Info: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.

M48Z35

Abstract: M48Z35V M48Z35Y M4Z28-BR00SH1 SOH28
Contextual Info: M48Z35 M48Z35Y, M48Z35V 256 Kbit 32Kb x 8 ZERO PO W ER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION ■ WRITE PROTECT VOLTAGES

M48T35Y

Abstract: M48T35 SOH28
Contextual Info: M48T35 M48T35Y 5.0V, 256 Kbit 32 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS

M41ST84W

Abstract: M41ST84Y M4TXX-BR12SH SOH28 KDS Crystals 8.192
Contextual Info: M41ST84Y M41ST84W 5.0 or 3.0V, 512 bit 64 x 8 SERIAL RTC with SUPERVISORY FUNCTIONS FEATURES SUMMARY • 5.0 OR 3.0V OPERATING VOLTAGE I2C Figure 1. 16-pin SOIC Package ■ SERIAL INTERFACE SUPPORTS (400 KHz) BUS ■ OPTIMIZED FOR MINIMAL INTERCONNECT TO MCU

M48T59

Abstract: M48T59V M48T59Y M4T28-BR12SH M4T32-BR12SH SOH28
Contextual Info: M48T59 M48T59Y/M48T59V* 5.0 or 3.3V, 64 Kbit 8 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ FREQUENCY TEST OUTPUT FOR REAL TIME CLOCK SOFTWARE CALIBRATION ■

AN1572

Abstract: M41T94 M4TXX-BR12SH SOH28 ST10
Contextual Info: M41T94 Serial Real Time Clock with 44Bytes NVRAM and Reset Feature summary • Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century ■ 32KHz crystal oscillator integrating load capacitance 12.5pF providing exceptional

M40Z300

Abstract: M40Z300W M4ZXX-BR00SH SOH28
Contextual Info: M40Z300 M40Z300W 5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ CONVERTS LOW POWER SRAM INTO NVRAMs PRECISION POWER MONITORING AND POWER SWITCHING CIRCUITRY AUTOMATIC WRITE-PROTECTION WHEN VCC IS OUT-OF-TOLERANCE

AS6C6264

Abstract: AS6C6264-55PCN AS6C6264-55SIN 6264 28pin alliance AS6C6264 SRAM 6264 AS6C6264-55SCN CI 6264 as6c6264-55stin
Contextual Info: February 2007 AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product

HY62WT08081E-DGC

Abstract: HY62WT08081E HY62WT08081E-DGE HY62WT08081E-DGI HY62WT08081E-DPC HY62WT08081E-DPE HY62WT08081E-DPI
Contextual Info: HY62WT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~5.5V Low Power Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Feb.05.2001 Preliminary 01 Revised - Change LL-Part Isb1 Limit @E.T/I.T, 4.5~5.5V : 15uA => 20uA

GLT4160L04

Abstract: GLT4160L04-40J3 GLT4160L04-50J3 GLT4160L04-60J3 GLT4160L04-70J3 GLT4160L04E-40J3 GLT4160L04E-50J3 GLT4160L04E-60J3 GLT4160L04E-70J3 GLT4160L04S-40J3
Contextual Info: G -LINK GLT4160L04 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Nov 2001 Rev.3.2 Features : Description : ∗ ∗ ∗ ∗ The GLT4160L04 is a high-performance CMOS dynamic random access memory containing 16,777,216 bits organized in a x4 configuration. The GLT4160L04 offers page

4 pin crystal 1mhz oscillator of KDS

Abstract: cei crystal oscillator clock M41T315V M41T315W M41T315Y M4TXX-BR12SH SOH28 KDS 1mhz oscillator KDS 32.768 KHz crystal for RTC
Contextual Info: M41T315Y* M41T315V/W SERIAL ACCESS PHANTOM RTC SUPERVISOR FEATURES SUMMARY • 3.0V, 3.3V, OR 5V OPERATING VOLTAGE ■ REAL TIME CLOCK KEEPS TRACK OF TENTHS/HUNDREDTHS OF SECONDS, SECONDS, MINUTES, HOURS, DAYS, DATE OF THE MONTH, MONTHS, and YEARS ■ AUTOMATIC LEAP YEAR CORRECTION

AN923

Abstract: M48T35 M48T35Y SOH28
Contextual Info: M48T35 M48T35Y 256 Kbit 32Kb x8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS ■ FREQUENCY TEST OUTPUT for REAL TIME

M48T58

Abstract: M48T58Y SOH28
Contextual Info: M48T58 M48T58Y 64 Kbit 8Kb x8 TIMEKEEPER SRAM INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY BYTEWIDE RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS FREQUENCY TEST OUTPUT for REAL TIME

quartz kds

Abstract: KDS 32. 768 KHZ crystal KDS 48 MHZ crystal oscillator KDS 8 MHZ crystal KDS Crystals 32.768 BR1225 BR1632 M41T56 SOH28 kds 2 pin crystal oscillator 4 MHz
Contextual Info: M41T56 512 bit 64b x8 Serial Access TIMEKEEPER SRAM • 5V ±10% SUPPLY VOLTAGE ■ COUNTERS for SECONDS, MINUTES, HOURS, DAY, DATE, MONTH, YEARS and CENTURY ■ YEAR 2000 COMPLIANT ■ SOFTWARE CLOCK CALIBRATION ■ AUTOMATIC POWER-FAIL DETECT and SWITCH CIRCUITRY

is25c64B

Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
Contextual Info: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are