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    GLT4160L04E-40J3 Search Results

    GLT4160L04E-40J3 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    GT40J322
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 40 A, Built-in Diodes, TO-3P(N) Datasheet

    GLT4160L04E-40J3 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    GLT4160L04E-40J3
    G-Link Technology DRAM Chip, EDO DRAM, 2MByte, 3.3V Supply, Extended Industrial, SOJ, 26-Pin Original PDF 598.02KB 22
    GLT4160L04E-40J3
    G-Link Technology 4M x 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Original PDF 588.11KB 22
    GLT4160L04E-40J3
    G-Link Technology 40ns 4M x 4 CMOS dynamic RAM with extended data output Original PDF 588.51KB 22