33 J PH Search Results

SI 1340

Abstract: 42-PIN
Contextual Info: 2.600 [6 6 .0 4 ]' 1.300 [33 .0 2] PIN .1 .26 [6.6] COMPONENT CLEARANCE 0.129 [03.28] 4 PLACES .450 • [11.43] ¿k X Q J a o a oJ flJJtel ’ jû o o a ' û ' û ' o> A O f tle y? [33 .0 2] ft h u0 e a t „ n uuu uuu tt/ u [ ]D |= in J Û 0 L J D Ù p. a

RX1214B150W

Contextual Info: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C

CA3100E

Abstract: CA3100 2120D D04B
Contextual Info: HARRIS SEMICOND SECTOR b l E ]> WÊ M3DE271 GGMbSTQ h5T I H HAS CA3100 33 HARRIS SEMICONDUCTOR J ru Ë \J \J Wideband Operational Amplifier March 1993 Description • High Open Loop Gain at Video Typ. at 1MHz

gp017

Abstract: ag35 ah3q VT82C686A VT82C im339 LM33B Q2N3906 EL B17 c520 U468 M/ag35 ah3q
Contextual Info: * I •- ■■ » . I ' C ' | . " " . B. ■■ G799 MB Block Diagram j ~~ e per 1 1 133 "1371“ 1 t 100 .VI. 3 1 3 6* 33 U44 M O D E/PC I F FS3/PCI0 PC11 J f lL PC 12 J J u PCI3 J 2 _ J l^ < PCM CPUSTP# CPUF PCISTPHWREFO

KS56C220

Contextual Info: « INVERTER GflIN/PHRSE vs. IC : KS56C220 Ft - 19.3 EMHzl FREQUENCY CHRRRCTERISTICS » Vdd : 3 CV] P.M - 118.8 Cdeg] Freq. CHHz] ~> 0 MB3 5»“ JÌS 8 Ì KS56C220 - 1 CL1/CL2 CpF3 33 / 33 Vdd- 3 CV3 FCR4.19M5 Fig.a^e Typical a. V1H/V1L 7 5 m u 3.5 3

RX1214B150W

Abstract: transistor bc 325
Contextual Info: J J _ L _ _ N AMER PHILIPS/DISCRETE OLE D • I JJ ^ O5O3J1 3 1 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C

2wire 4wire telephone

Abstract: varistor far 10k 150 RC1496
Contextual Info: RC1496/14 Integral Modems < J > Rockwell RC1496/14 V.33 14400 bps 4-Wire Modem INTRODUCTION FEATURES The Rockwell RC1496/14 is a 14400 bps 4-wire, fullduplex, synchronous/asynchronous, V.33 modem data pump module. It operates over a leased line with dial backup.

Contextual Info: MIC631/32/33 and MIC641/42/43 S rn r _ 'l—- l GlÉjM •-j Ü K G J lP L JM jjw j |l^ KÜi f P j| ^ f ijB n J Step-Up Switching Regulators g g |j|ghg j|i|fl| General Description The MIC631/641, MIC632/642, and MIC633/643 are fixed frequency, hysteretic-mode, step-up boost regulators.

D60T2575

Abstract: D60T2590 1S697 D60T307510 D62T D62T307510 FC75A
Contextual Info: POlüEREX INC Tfl DE j T S ' m a i QOQSbb? 0 ^ M |j r |l J F y IM . » D60T/D62T D60T/D62T Powerex, Inc., Hillls S treet, Youngwoad, Pennsylvania 1S697 412 925-7272 ~ j - 33^15" _ 75 _ 90 NPN Power Switching Transistors 75-90 Amperes 250-500 Volts

Contextual Info: « INVERTER GRIN/PHRSE vs. FREQUENCY CHRRRCTERISTICS » IC : KS57C58I6XHI Ft - 23.6 MHz] V M : 3 [V] P.M - 107.4 [dag] Freq. CMHzl —>0 [dB] J-d-“-9Ì KS57C5016XHI - 1 CL1/CL2 CpFD 33 / 33 FCR4.19M5 F ig .a ^ e Vdd 3 CV3 T y p ic a l a. V1H/V1L CVD

MS-034

Abstract: n 332 ab sot683 HBGA960
Contextual Info: PDF: 2001 Apr 24 Philips Semiconductors Package outline HBGA960: plastic, heatsink ball grid array package; 960 balls; body 33 x 33 x 2.4 mm SOT683-1 B D A D1 ball A1 index area A3 A E1 E A2 A1 detail X e1 b e AL AJ AG AE AC AA W U R N L J G E C A ∅w M AF

inmos transputer C011

Abstract: imsc011
Contextual Info: IN MO S CORP IDEI D | 4ñ05tiññ OO^ti^g 1 j[ te m o s_ Chapter - 3 ' ¿ - Q 3 • IMS C011 engineering data 249 INflOS CORP T-J?2.-33~03 250 1 i a E ; j I MflOSböö D Q 0 3 Î H 3

BD204

Abstract: BD202F til 31a BD201F BD203F BD204F BDX77F BDX78F Philips 119
Contextual Info: _ PHILIPS INTERNATIONAL SbE D • BD202F; BD204F BDX78F J 7110Û2L 0042fl5b flbO M P H I N T-33-l7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors inSOT186 envelopes with an electrically insulated mounting base.

reh3

Abstract: 9555TAC 7B-26
Contextual Info: 64>*, ?6=33|<60>3 >;872 >?0?3 =380C 4IEUVSIT ^ N`glg akgdYlagf ^ JED klYlmk af\a[Ylgj ^ Da]d][lja[ klj]f_l` 9555T ^ X]jg [jgkk gj jYf\ge lmjf2gf ^ Bmadl2af kfmZZ]j ^ P]egnYZd] ^af_]j hjgg^ [gn]j YnYadYZd] ^ NYf]d egmfl ^ Efnajgfe]flYd ^ja]f\dq hjg\m[l .PgHQ [gehdaYfl/

Contextual Info: FEATURES • 2300-2410 MHz J ■ ■ High Frequency Low Transient t t } ■ 38 Pin d ip MODEL NO. DPS52181 Phase Shifter 5 Section RF IN/OU T GND 38 - 37 Q 36 35 34 33

marking 3N1

Contextual Info: Thin Film Chip Inductors SPECIFICATIONS CTTF0402F Series Please specify tolerance code when ordering. CTTF0402F-0N2_ B = ±0.1nH, C = ±0.2nH, S = ±0.3nH, F = ±1%, G = ±2%, H = ±3%, J = ±5% * = F, G, H or J only * = B, C, or S only From 0.2 nH to 33 nH

Contextual Info: Thin Film Chip Inductors SPECIFICATIONS CTTF0402F Series Please specify tolerance code when ordering. CTTF0402F-0N2_ B = ±0.1nH, C = ±0.2nH, S = ±0.3nH, F = ±1%, G = ±2%, H = ±3%, J = ±5% * = F, G, H or J only * = B, C, or S only From 0.2 nH to 33 nH

cxd 158

Abstract: F038 GMS34012
Contextual Info: IC dependence of osc i11at ing character ist ics GMS34012 F0384M5 - S Room Temp. Udd CU] CL1/CL2 CpF] 3 item cfe 33 / 33 6MS34012 - CL F0384M5 Udd= 3 CUD CFig.cTd) Ta= 20 Cdeg] Typical o. U1H/U1L CU] 5 2.5 2.6 in C\J 3 -.2 • CUD -.2 -.2 i 2 2 U1H •= -

philips carbon film resistor

Abstract: 5043CX Bulk Carbon Film Fixed Resistor 5 Watt Resistors 2322 211 philips resistor 2322 philips carbon film resistors 2322 211 100R0 resistor 2322 series 2 watt carbon film resistor
Contextual Info: Philips Components Product Specification Carbon Film Resistor .33 Watt 5% FEATURES 5043CX J 2322 211. QUICK REFERENCE DATA Low Cost Resistance Range 1S2 to 10 M£2; E24 Series DESCRIPTION Resistance Tolerance ± 5% Temperature Coefficient See Figure 4

Contextual Info: 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VCBO VCEO sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3

2N6127

Abstract: 2N6354 2N5007 2N6262 2N6350 2N6351 2N6352 2N6353 2N6383 2N6384
Contextual Info: - 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VcBO VCEO (sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3

TO61 package

Abstract: TO111 package 2N6262 2N6226 2N6353 2N5007 2N6350 2N6351 2N6352 2N6354
Contextual Info: 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VCBO VCEO sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3

T1P50

Abstract: transistors t1p50
Contextual Info: PHILIPS INTERNATIONAL 45E D CI 711Qö2ti DQ31SMS h E3PHIN 11 TIP47; TIP48 J I TIP49; TIP50 r-33-// — SILICON DIFFUSED POWER TRANSISTORS Medium-voltage, high-speed, glass-passivated NPN power transistors in T 0-220 envelope for amplifier and switching applications.

Contextual Info: PHILIPS INTERNATIONAL SLE J> • 711DÛ2b GCm33SG 4b2 « P H I N Philips Components BDV64F/64AF/64BF/64CF r"33"^ Data sheet status Product specification date of issue December 1990 PNP Silicon Darlington power transistors DESCRIPTION PINNING - SOT199 PIN 1