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Infineon Technologies AG


Infineon Technologies AG SPW32N50C3FKSA1 Transistor: N-MOSFET; unipolar; 560V; 32A; 284W; TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SPW32N50C3FKSA1		241		1	1 $7.93 10 $6.67 100 $4.86 1000 $3.76 10000 $3.76	Buy Now
Avnet Americas	SPW32N50C3FKSA1	Tube		11 Weeks	240	1 - 10 - 100 - 1000 $3.08 10000 $3.05	Buy Now
Newark	SPW32N50C3FKSA1	Bulk	24		1	1 $9.86 10 $8.50 100 $5.31 1000 $4.80 10000 $4.80	Buy Now
Rutronik	SPW32N50C3FKSA1	Tube	1,320		30	1 - 10 - 100 $3.76 1000 $3.08 10000 $3.08	Buy Now
EBV Elektronik	SPW32N50C3FKSA1			11 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Vyrian	SPW32N50C3FKSA1		12,788			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPW32N50C3FKSA1		984			1 - 10 $8.80 100 $5.86 1000 $5.86 10000 $5.86	Buy Now
Infineon Technologies AG SPW32N50C3 MOSFETs N-Ch 560V 32A TO247-3 CoolMOS C3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SPW32N50C3		1,873			1 $9.86 10 $5.31 100 $4.91 1000 $4.73 10000 $4.73	Buy Now
Win Source Electronics	SPW32N50C3		1,094			1 - 10 $8.80 100 $5.86 1000 $5.86 10000 $5.86	Buy Now

32N50C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
32N50C3 Abstract: SPW32N50C3 Q67040-S4613 Contextual Info: 32N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	spw32n50c3 pg-to247 q67040-s4613 32n50c3	PDF
32N50C3 Abstract: 32N50C 32N50 Contextual Info: 32N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	spw32n50c3 pg-to247 q67040-s4613 32n50c3 +232n50c 32n50	PDF
32N50C3 Abstract: Q67040-S4613 SPW32N50C3 Contextual Info: 32N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	spw32n50c3 p-to247 q67040-s4613 32n50c3	PDF
32N50C3 Abstract: SPW32N50C3 Contextual Info: 32N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	spw32n50c3 pg-to247 q67040-s4613 32n50c3 +2009-134-a o-247	PDF
32N50C3 Abstract: SPW32N50C3 Contextual Info: 32N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	spw32n50c3 pg-to247 q67040-s4613 32n50c3	PDF
32N50C3 Abstract: 32N50C SPW32N50C3 Q67040-S4613 Contextual Info: 32N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	spw32n50c3 p-to247 q67040-s4613 32n50c3 +132n50c	PDF
32N50C3 Abstract: 32N50C Contextual Info: 32N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	spw32n50c3 p-to247 q67040-s4613 32n50c3 +132n50c	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	b192-h6780-g10-x-7600 sp000012954 sp000013610 sp000017969 +13sp000014627 sp000018085 sp000018086 pef 24628 psb 21493 siemens pmb 6610 47n60c3 psb 21553 pmb7725 pef 22628 pmb6610 psb 50505 pmb 6819	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	b192-h6780-g9-x-7600 d-81669 vdsl5100i-e vdsl6100i-e +10bcm 4336 2a0565 c2335 2a280z c1740 bipolar transistor transistor a1267 a1273 transistor c2335 r 2b0565 2b265	PDF
Contextual Info: 32N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	spw32n50c3 pg-to247 q67040-s4613 32n50c3 +2009-134-a o-247	PDF