32KXB Search Results

32KxB

Contextual Info: '•HYUNDAI HY62255BSeries 32KxB-bit CMOS SHAM PRELIMINARY DESCRIPTION The HYB2256B is a high-speed, law power and 32.7BS x B-bils CMOS static RAM fabricated using Hyundai's high performance twin lub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: Honeywell Military & Space Products 5.12 MEGABIT MEMORY MODULE RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (L#fl = 0.6 |im) • Read/Write Cycle Times <,17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad (Si02)

32KXB

Contextual Info: AEPSX256K8 STATIC RAM MODULE >> 262,144 x 8 Organization > > Double sided to maximize bit density > > Low 0.66 • stand-off height suited to 0.8" card spacing > > Completely Static operation > > TTL compatible > > Low power, battery back-up operation capability

Contextual Info: HIG H-SPEED STATIC RAM O RGANIZED AS 3 2 K x 9 ADVANCE INFORMATION IDT 71259 FEATURES: DESCRIPTION: • High-speed address/chip select time The IDT71259 is a 294,912-bit high-speed static RAM organized as 32K x 9. It is fabricated using IDT’s high-performance high-reliability CEMOS technology. This state-of-the-art technology,

32kx8 sram

Abstract: VSS115 32kxS
Contextual Info: Honeywell Advance Information HC80820 256K X 8 RADIATION-TOLERANT SRAM FEATURES R A D IA TIO N OTHER • Total D ose Hardness at Tactical Level • S pare Mem ory Chip can be Substituted O n-The-Fly • Soft Error R ate of <1 x1 O'5 upsets/bit-day or <1 upset/module-day

HM6206

Abstract: 32Kx64
Contextual Info: SRAMs Cache Synchronous SRAMs P ackage P a rt N um b e r D e n i lt y O r g a n iz a tio n C y c le tim e / A c c e « » tim e (n e ) Max. Key F e a tu re LQ FP HM62C3232 1M 32K x32 9/10/12/15 Pipeline 100 HM62C3232FP-7 1M 32K x32 7 Pipeline 100 HM62C3232FP-8L

Contextual Info: AEPSS128K16-FCT139 STATIC RAM MODULE >> 131,072 x 16 Organization > > High speed, High density 4 5 pin SIP > > Completely Static operation > > TTL com patible > > Low power, battery back-up operation capability > > Uses single + 5 V p o w er supply 128 KILOBYTES STATIC

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1

D04005

Abstract: by 028
Contextual Info: AEPSX256K8 STATIC RAM MODULE > > 262,144 x 8 Organization > > Double sided to maximize bit density > > Low 0 .66 “ stand-off height suited to 0.8 " card spacing > > Completely Static operation > > TTL compatible > > Low power, battery back-up operation capability