32K RAM Search Results

cy7c9101

Abstract: CY2901 CY7C190 PLD20RA10 CY2149 CY7C122 CY7C148 CY7C149 CY7C150 22V10-Macrocell
Contextual Info: Military Product Selector Guide Static RAMs Size Organization 64 64 1K 1K 4K 4K 4K 4K 4K 8K 8K 16K 16K 16K 16K 16K 16K 16K 16K 16K 32K 32K 32K 32K 32K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 256K 256K 256K 256K 256K 256K 256K 1M 1M

s5 rack

Contextual Info: COMPONENT DESCRIPTION BULLETIN 3100 DMC USER MEMORY 32K 3100-MR3 SERIES A DESCRIPTION SPECIFICATIONS 3100-MR3 MEM 86-192K/RAM 32K is a general purpose memory board which contains system memory plus 32K user memory with battery back-up. Location: CPU rack

71256SA25

Abstract: IDT71256SA
Contextual Info: IDT71256SA FAST CMOS STATIC RAM 256K 32K x 8-BIT IN TSOP PACKAGE COMMERCIAL TEMPERATURE RANGE FAST CMOS STATIC RAM 256K (32K x 8-BIT) IN TSOP PACKAGE IDT71256SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 8 advanced high-speed CMOS static RAM

SEM 2005 16 PINS

Abstract: sem 2005 CYPRESS CROSS REFERENCE dual port sram sem 2005 16 pin CY7C006A CY7C007A CY7C016A CY7C017A TPD16-3
Contextual Info: CY7C006A CY7C007A CY7C017A32K/16K x 8, 32K x 9 Dual-Port Static RAM CY7C006A/CY7C007A CY7C016A/CY7C017A 32K/16K x8, 32K/16K x9 Dual-Port Static RAM Features • Automatic power-down • True dual-ported memory cells which allow simultaneous access of the same memory location

smd diode a6

Abstract: smd transistor A13 IDT71256 L7C199CC25 L7C199PC15 L7C199PC20 L7C199PC25 L7C199
Contextual Info: L7C199 L7C199 DEVICES INCORPORATED 32K x 8 Static RAM 32K x 8 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 32K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 15 ns maximum

CY7C006A

Abstract: CY7C007A CY7C016A CY7C017A
Contextual Info: CY7C006A CY7C007A CY7C017A32K/16K x 8, 32K x 9 Dual-Port Static RAM CY7C006A/CY7C007A CY7C016A/CY7C017A 32K/16K x8, 32K/16K x9 Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • 16K x 8 organization CY7C006A

Z451

Contextual Info: CYM1720 CYPRESS SEMICONDUCTOR 32K x 24 Static RAM Module F eatures F unctional D escription • High-density 768-kilobit SRAM module The CYM1720 is a high-performance 768-kilobit static RAM module organized as 32K words by 24 bits. This module is constructed using three 32K x 8 static

GR3281

Abstract: ram 62256 43256 43256 static ram 55257 62256 55257 RAM 62256 RAM STATIC RAM 62256 16 STATIC RAM 62256
Contextual Info: GR3281 32K x 8 NON-VOLATILE RAM GR3281 (32K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR3281 is a 32768 word by 8 bits (32K x 8) non-volatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.

Contextual Info: PRELIMINARY CYM1828 32K x 32 Static RAM Module Features Functional Description D The CYM1828 is a very high performance 1Ćmegabit static RAM module organized as 32K words by 32 bits. The module is conĆ structed using four 32K x 8 static RAMs mounted onto a multilayer ceramic subĆ

Contextual Info: APR j- ^ 1931 SM22432Z August 1990 Preliminary SM22432Z 32K X 24 CMOS SRAM Module General Description Features Hie SM22432Z is a high performance, 768 kilobit static RAM module, organized as 32K words by 24 bits, in a 56-pin, zigzag leaded package ZIP . The SM22432Z utilizes three 32K x 8 static

Contextual Info: AL5DS9xx9V AL5DS9xx9V Data Sheets 3.3V Synchronous Dual-Port SRAM AL5DS9349V/59V/69V/79V 4K/8K/16K/32K x 18 bits AL5DS9269/79V 16K/32K x 16 bits AL5DS9159/69/79/89V 8K/16K/32K/64K x 9 bits AL5DS9069/79/89V 16K/32K/64K x 8 bits Preliminary 2002~3-Copyright by AverLogic Technologies, Corp.

3VR10

Abstract: AL5DS9289V AL5DS9389V marking a0l
Contextual Info: AL5DS9xx9V AL5DS9xx9V Data Sheets 3.3V Synchronous Dual-Port SRAM AL5DS9349V/59V/69V/79V 4K/8K/16K/32K x 18 bits AL5DS9269/79V 16K/32K x 16 bits AL5DS9149/59/69/79/89V 4K/8K/16K/32K/64K x 9 bits AL5DS9069/79/89V 16K/32K/64K x 8 bits Preliminary 2002-Copyright by AverLogic Technologies, Corp.

Contextual Info: 27C256 & Microchip 256K 32K x 8 CMOS EPROM DESCRIPTION FEATURES The Microchip Technology Inc 27C256 is a CMOS 256K bit (electrically) Programmable Read Only Memory. The device is organized as 32K words by 8 bits (32K bytes). Accessing individual bytes from an address transition or

p612l

Abstract: 624L
Contextual Info: &) Integrated Devi ce Technology, Inc. 64K X 16 32K X 16 CMOS STATIC RAM MODULE IDT8MP624L IDT8MP612L FEATURES: DESCRIPTION: • The ID T8M P 624LV ID T8M P612L are high-speed C M O S static RA M s constructed on an epoxy laminate substrate using four 32K x 8 static RAMs ID T 8M P 62 4L ) or two 32K x 8

Contextual Info: ADVANCE INFORMATION IDT 71583 HIGH-SPEED STATIC RAM ORGANIZED AS 32K x 8 FEATURES: DESCRIPTION: • 32K x 8 Parity checking Static RAM • High-speed address/chip select time The IDT71583 is a 294,912-bit high-speed static RAM organized as 32K x 8. It Is fabricated using IDT's high-performance highrellability CEMOS technology. This state-of-the-art technology,

303F

Abstract: STK15C88 cmos vs ttl stk15c88-45
Contextual Info: STK15C88 32K x 8 AutoStore nvSRAM High Performance CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage Without Battery Problems • Directly Replaces 32K x 8 static RAM, Battery Backed RAM or EEPROM • 25ns, 35ns and 45ns Access Times

XA-G37

Abstract: SCR Handbook, General electric
Contextual Info: INTEGRATED CIRCUITS XA-G39 XA 16-bit microcontroller family 32K FLASH/1K RAM, watchdog, 2 UARTs Preliminary data Philips Semiconductors 2002 Mar 13 Philips Semiconductors Preliminary data XA 16-bit microcontroller family 32K Flash/1K RAM, watchdog, 2 UARTs

Marking GVT

Abstract: 8-8NS GALVANTECH marking A3L
Contextual Info: ADVANCE INFORMATION GVT8164/32/16C16/18 GVT81128/64/32C8/9 GALVANTECH, INC. SYNCHRONOUS DUAL-PORT BURST SRAM 64K/32K/16K x 16/18 128K/64K/32K x 8/9 +3.3V SUPPLY, BURST COUNTER FEATURES GNERAL DESCRIPTION • The GVT8116C16/18, GVT8132C16/18, and GVT8164C16/18 are high speed synchronous 16K, 32K and

GALVANTECH

Contextual Info: ADVANCE INFORMATION GVT7464/32/16V16/18 GVT74128/64/32V8/9 GALVANTECH, INC. SYNCHRONOUS DUAL-PORT BURST SRAM 64K/32K/16K x 16/18 128K/64K/32K x 8/9 +3.3V SUPPLY, BURST COUNTER FEATURES GNERAL DESCRIPTION • The GVT7416V16/18, GVT7432V16/18, and GVT7464V16/18 are high speed synchronous 16K, 32K and

"Dual-Port RAM" for video applications

Abstract: "32K x 16" dual port SRAM sram with address counter 3.3v counter
Contextual Info: AL5DS9xx9V 3.3V Synchronous Dual-Port SRAM 4K/8K/16K/32K/64K/128K x 8/9/16/18-bit Features True dual ported memory cells 17 Flow-Through/Pipelined devices: - 4K/8K/16K/32K/64K x 18-bit organization AL5DS9349V/59V/69V/79V/89V - 16K/32K/64K x 16-bit organization (AL5DS9269V/79V/89V)

IDT71V256

Abstract: IDT71V256SA P28-2 A 3101 8 pin
Contextual Info: IDT71V256SA 3.3V CMOS STATIC RAM 256K 32K x 8-BIT  LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT) COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71V256SA Integrated Device Technology, Inc. FEATURES • Ideal for high-performance processor secondary cache

FTL 8-1

Contextual Info: ADVANCE INFORMATION GVT8664/32/16C16/18 GVT86128/64/32C8/9 GALVANTECH, INC. SYNCHRONOUS DUAL-PORT BURST SRAM 64K/32K/16K x 16/18 128K/64K/32K x 8/9 +5V SUPPLY, BURST COUNTER FEATURES GNERAL DESCRIPTION • The GVT8616C16/18, GVT8632C16/18, and GVT8664C16/18 are high speed synchronous 16K, 32K and

MO-119

Abstract: cy14e256la-sz25x cy14e256la-sz45xi
Contextual Info: CY14E256LA 256 Kbit 32K x 8 nvSRAM 256 Kbit (32K x 8) nvSRAM Features Functional Description • 25 ns and 45 ns Access Times ■ Internally Organized as 32K x 8 (CY14E256LA) ■ Hands off Automatic STORE on Power Down with only a Small Capacitor ■ STORE to QuantumTrap Nonvolatile Elements Initiated by

Contextual Info: □PM Dense-Pac Microsystems. Ino DPE8M612 32K X 16 CMOS EEPROM MODULE O DESCRIPTION: The DPE8M612 is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organized as 32K X 16 or 64K X 8. The module is built with two low-power CMOS 32K X 8