32BIT SDRAM Search Results

W9812G2IH-6

Abstract: W9812G2IH-6C W9812G2IH6I
Contextual Info: W9812G2IH 1M x 4 BANKS × 32BIT SDRAM Table of Contents1 GENERAL DESCRIPTION . 3 2 FEATURES. 3

w9812g2ih

Abstract: W9812G W9812G2IH-6C
Contextual Info: W9812G2IH 1M x 4 BANKS × 32BIT SDRAM Table of Contents1 GENERAL DESCRIPTION . 3 2 FEATURES. 3

W9825G2DB

Abstract: W9825G2DB75I
Contextual Info: W9825G2DB 2M x 4 BANKS × 32BIT SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3

Contextual Info: HY5V52CF 4 Banks x 2M x 32Bit Synchronous DRAM Document Title 4Banks x 2M x 32Bit Synchronous DRAM Revision History Revision No. History Draft Date Remark Preliminary 0.1 Initial Draft Sep.06.2002 0.2 2nd Generation Nov.11.2002 0.3 133MHz Speed Added Dec.13.2002

Contextual Info: HY5V52CF 4 Banks x 2M x 32Bit Synchronous DRAM Document Title 4Banks x 2M x 32Bit Synchronous DRAM Revision History Revision No. History Draft Date Remark Preliminary 0.1 Initial Draft Sep.06.2002 0.2 2nd Generation Nov.11.2002 0.3 133MHz Speed Added Dec.13.2002

A45L9332

Contextual Info: A45L9332 Series Preliminary 256K X 32Bit X 2 Banks Synchronous Graphic RAM Document Title 256K X 32Bit X 2 Banks Synchronous Graphic RAM Revision History Rev. No. 0.0 History Issue Date Remark Initial issue December 4, 1998 Preliminary PRELIMINARY December, 1998, Version 0.0

a45l9332f-6

Abstract: A45L9332 100L
Contextual Info: A45L9332 Series 256K X 32Bit X 2 Banks Synchronous Graphic RAM Document Title 256K X 32Bit X 2 Banks Synchronous Graphic RAM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue December 4, 1998 Preliminary 1.0 AC and DC data specification update

Contextual Info: EtronTech Industrial EM638325 2M x 32 Synchronous DRAM SDRAM Rev 1.0 Mar/2006 Pin Assignment (Top View) Features Clock rate: 200/183/166/143 MHz Fully synchronous operation Internal pipelined architecture Four internal banks (512K x 32bit x 4bank) Programmable Mode

K4D263238

Abstract: K4D263238M-QC40
Contextual Info: 128M DDR SDRAM K4D263238M 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Revision 1.0 December 2000 Samsung Electronics reserves the right to change products or specification without notice.

EM638325TS-6G

Abstract: EM638325TS5G EM638325TS-7G EM638325TS-5G
Contextual Info: EtronTech EM638325 2M x 32 Synchronous DRAM SDRAM (Rev 1.7 Mar./2007) Features Clock rate: 200/183/166/143 MHz Fully synchronous operation Internal pipelined architecture Four internal banks (512K x 32bit x 4bank) Programmable Mode - CAS# Latency: 2 or 3

k4n26323ae

Abstract: K4N26 K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25
Contextual Info: 128M GDDR2 SDRAM K4N26323AE-GC 128Mbit GDDR2 SDRAM 1M x 32Bit x 4 Banks GDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.7 January 2003 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.7 Jan. 2003

Contextual Info: ESM T M52D128324A 2E Mobile SDRAM 1M x 32Bit x 4Banks Mobile Synchronous DRAM GENERAL DESCRIPTION FEATURES The M52D128324A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with high performance CMOS

8X13

Contextual Info: EtronTech EM638325 2M x 32 Synchronous DRAM SDRAM (Rev 1.7 Oct./2007) Ordering Information Features Clock rate: 200/183/166/143 MHz Fully synchronous operation Internal pipelined architecture Four internal banks (512K x 32bit x 4bank) Programmable Mode - CAS# Latency: 2 or 3

K4S643232F

Contextual Info: K4S643232F CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.0 January 2002 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Jan. 2002 K4S643232F CMOS SDRAM Revision History

K4D623237A-QC70

Contextual Info: 64M DDR SDRAM K4D623237A 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and without DLL Revision 1.2 February 2001 Samsung Electronics reserves the right to change products or specification without notice.

KM432S2030C

Contextual Info: KM432S2030C CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 March 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- REV. 1.1 Mar. '99 KM432S2030C CMOS SDRAM Revision History

400M

Abstract: NT5DS4M32EG QA47
Contextual Info: NT5DS4M32EG 4Mx32 Double Data Rate SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL 144-Ball FBGA Nanya Technology Corp. NTC reserves the right to change products or specification without notice. REV 1.1

K4S643234E

Contextual Info: K4S643234E-TC CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 2.5V Commercial Temperature 86-TSOP Revision 1.3 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 (Oct. 2001)

Contextual Info: K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.0 October 2000 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Oct. 2000 K4S643232E CMOS SDRAM Revision History

K4S643232C

Contextual Info: K4S643232C CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 November 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- REV. 1.1 Nov. '99 K4S643232C CMOS SDRAM Revision History

K4D263238M-QC40

Contextual Info: 128M DDR SDRAM K4D263238M 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Revision 1.3 August 2001 Samsung Electronics reserves the right to change products or specification without notice. - 1 -

K4S643232E

Contextual Info: K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.3 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 Oct. 2001 K4S643232E CMOS SDRAM Revision History

K4S643234E

Contextual Info: K4S643234E-TE CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 2.5V Extended Temperature 86-TSOP Revision 1.7 December 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.7 (Dec. 2001)

Contextual Info: KM432S2030C CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.0 March 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- REV. 1.0 Mar. '99 KM432S2030C CMOS SDRAM Revision History