329MM Search Results

TRANSISTOR R1002

Abstract: r1002 R1002-QB TRANSISTORS R1002 256QAM XR1002 XR1002-QB XR1002-QB-0N00
Contextual Info: 18.0-30.0 GHz GaAs Receiver QFN, 7x7 mm R1002-QB January 2010 - Rev 09-Jan-10 Features Fundamental High Dynamic Range Receiver Integrated Gain Control +4.0 dBm Input Third Order Intercept IIP3 14.0 dB Conversion Gain 3.5 dB Noise Figure 25.0 dB Image Rejection

LP141X6-A1IB

Abstract: kz4E KZ4E038C12CFP lvds cable lg.philips LP141X6 FI-SEB-20P-HF 14.1 xga 30 pin FI-WEB21P-HF LG.Philips LCD kz4e038c12
Contextual Info: SPECIFICATIONS TITLE: LP141X6-A1IB REV. 1 PAGE 1 OF 22 LP141X6-A1IB LIQUID CRYSTAL DISPLAY DATA DISPLAY AG LP141X6-A1IB 14.1“ XGA TFT LCD PRELIMINARY SPECIFICATION The information given in this document is carefully checked and believed to be reliable. Data Display reserves the

R1008-QB

Abstract: QFN 7X7 free circuit diagram of rf id MTTF bav99 12k1 r1008 5R62 BAV99 MMBT3904 MMBT3906
Contextual Info: 35.0-45.0 GHz GaAs Receiver QFN, 7x7 mm R1008-QB March 2007 - Rev 21-Mar-07 Features Sub-harmonic Receiver Integrated LNA, Image Reject Mixer, LO Doubler/Buffer +2.0 dBm LO Drive Level 8.0 dB Conversion Gain 4.0 dB NF +5.0 dBm Input Third Order Intercept IP3

XP1005

Abstract: XU1006-QB XU1006-QB-0L00 XU1006-QB-0L0T XU1006-QB-EV1
Contextual Info: 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm U1006-QB October 2006 - Rev 19-Oct-06 Features Sub-harmonic, Image Reject Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +17.0 dBm Output Third Order Intercept OIP3 +2.0 dBm LO Drive Level 5.0 dB Conversion Gain

Contextual Info: Xantrex PRO 1000 & 1800 Inverters TM XM 1000 and XM 1800 modified sine wave inverters with transfer switch Performance inverters designed for RVs and boats Designed for RV and marine electrical systems that already have a battery charger or generator installed, Xantrex PRO Inverters deliver modified sine wave power for small appliances, TVs, and other

XP1042-QT-0G0T

Abstract: XP1042-QT-EV1 XP1042-QT XP1042-QT-0G00 QFN "200 pin" PACKAGE
Contextual Info: 12.0-16.0 GHz Power Amplifier QFN, 3x3mm P1042-QT February 2010 - Rev 22-Feb-10 Features 21 dB Small Signal Gain 25 dBm P1dB Compression Point 38 dBm Output IP3 Linearity 17 dB Gain Control with Bias Adjust 3x3mm Standard QFN Package 100% RF Testing General Description

via vt8235 user manual

Abstract: via vt8235 SC1486ITS D410J z0607 vt1631 RSS090 C158D158 Preface Notebook Computer C955
Contextual Info: Preface Notebook Computer D400J/D410J Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are

R1008-QB

Abstract: free circuit diagram of rf id receiver QAM schematic diagram 12k1 r1008 TRANSISTOR R1008 5R62 BAV99 MMBT3904 MMBT3906
Contextual Info: 35.0-45.0 GHz GaAs Receiver SMT, 7x7 mm R1008-QB December 2007 - Rev 04-Dec-07 Features Sub-harmonic, Image Reject Receiver Integrated LNA, Image Reject Mixer, LO Doubler/Buffer +2.0 dBm LO Drive Level 8.0 dB Conversion Gain 4.0 dB NF +5.0 dBm Input Third Order Intercept IIP3

D1005

Abstract: mmic distributed amplifier XD1005-QT XD1005-QT-0G00 XD1005-QT-EV1
Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN February 2007 - Rev 08-Feb-07 D1005-QT Features Ultra Wide Band Driver Amplifier Self Biased Architecture 18.0 dB Small Signal Gain 6.0 dB Noise Figure RoHS Compliant SMD, 3x3 mm QFN Package 100% RF, DC, and Output Power Testing

Contextual Info: 37.0-40.0 GHz GaAs Transmitter SMT, 7x7 mm U1006-QB April 2011 - Rev 25-Apr-11 Features Sub-harmonic, Image Reject Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +17.0 dBm Output Third Order Intercept OIP3 +2.0 dBm LO Drive Level 2.0 dB Conversion Gain

2SJ series

Abstract: TO252 TO-252 2sk2981 2SK3113 equivalent 2SK2414-Z 2sk2414 2sk2415 2SK1282 2Sj325
Contextual Info: N & P CHANNEL POWER MOSFETS 2SK & 2SJ SERIES • DRAIN CURRENTS FROM 2A TO 30A IN A 20W PACKAGE • LOW AND HIGH VOLTAGE VERSIONS, UP TO 600V UP TO 100V N & P CHANNEL MOSFETS The latest comprehensive data to fully support these parts is readily available.

XU1006-QB

Abstract: XP1005
Contextual Info: 37.0-40.0 GHz GaAs Transmitter SMT, 7x7 mm U1006-QB April 2011 - Rev 25-Apr-11 Features Sub-harmonic, Image Reject Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +17.0 dBm Output Third Order Intercept OIP3 +2.0 dBm LO Drive Level 2.0 dB Conversion Gain

CMM1100-QF

Abstract: CMM1100-QF-0N00 CMM1100-QF-0N0T CMM1100-QF-EV1 C3029
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier, QFN CMM1100-QF November 2007 - Rev 02-Nov-07 Features Self Bias Architecture 15.0 dB Small Signal Gain 3.8 dB Noise Figure +15.0 dBm P1dB Compression Point RoHS Compliant SMD, 4x4 mm QFN Package 100% RF, DC, and Noise Figure Testing

LQ064V3DG02

Abstract: DF9A-31S-1V DF9B-31S-1V DF9C-31S-1V monochrome cmos IMAGE SENSOR 2005 hiu-359a CS-100 SENSOR HIU-359A-S2
Contextual Info: PREPARED BY: APPROVED BY: SHARP SPEC No. LA1-05005B FILE No. ISSU E D : PAGE : JU N E . 28.2006 18 pages MOBILE LIQUID CRYSTAL DISPLAY GROUP APPLICABLE GROUP SHARP CORPORATION MOBILE LIQUID CRYSTAL DISPLAY SPECIFICATION GROUP DEVICE SPECIFICATION FOR TFT-LCD module

Contextual Info: 37.0-42.0 GHz GaAs Power Amplifier QFN, 7x7mm P1031-QK March 2009 - Rev 21-Mar-09 Features Linear Power Amplifier Output Power Adjust 23.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point +35.0 dBm OIP3 General Description Mimix Broadband’s four stage 37.0-42.0 GHz SMD

Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT November 2009 - Rev 07-Nov-09 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 17.0 dB Small Signal Gain +20.0 dBm Psat +32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias

Contextual Info: 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm U1006-QB August 2007 - Rev 19-Aug-07 Features Sub-harmonic, Image Reject Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +17.0 dBm Output Third Order Intercept OIP3 +2.0 dBm LO Drive Level 5.0 dB Conversion Gain

Contextual Info: 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN B1009-QT December 2006 - Rev 12-Dec-06 Features Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 16.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point RoHS Compliant SMD, 3x3 mm QFN Package

Contextual Info: 35.0-45.0 GHz GaAs Receiver QFN, 7x7 mm R1008-QB August 2007 - Rev 12-Aug-07 Features Sub-harmonic Receiver Integrated LNA, Image Reject Mixer, LO Doubler/Buffer +2.0 dBm LO Drive Level 8.0 dB Conversion Gain 4.0 dB NF +5.0 dBm Input Third Order Intercept IP3

D1005

Abstract: XD1005-QT XD1005-QT-0G00 XD1005-QT-EV1
Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN February 2007 - Rev 08-Feb-07 D1005-QT Features Ultra Wide Band Driver Amplifier Self Biased Architecture 18.0 dB Small Signal Gain 6.0 dB Noise Figure RoHS Compliant SMD, 3x3 mm QFN Package 100% RF, DC, and Output Power Testing

B1009

Abstract: XB1009-QT XB1009-QT-0G00 XB1009-QT-EV1 XP1022-QF XU1002 XU1002-QD XB1004-QC
Contextual Info: 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN B1009-QT February 2007 - Rev 08-Feb-07 Features Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 16.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point RoHS Compliant SMD, 3x3 mm QFN Package

P1080-QU

Abstract: xp1080 329mm
Contextual Info: 37.0-40.0 GHz GaAs Power Amplifier QFN, 7x7mm P1080-QU January 2011 - Rev 10-Jan-11 Features Linear Power Amplifier On-Chip Power Detector Output Power Adjust 25.0 dB Small Signal Gain +27.0 dBm P1dB Compression Point +38.0 dBm OIP3 General Description Absolute Maximum Ratings1,2

Contextual Info: 35.0-45.0 GHz GaAs Receiver SMT, 7x7 mm R1008-QB January 2008 - Rev 24-Jan-08 Features Sub-harmonic, Image Reject Receiver Integrated LNA, Image Reject Mixer, LO Doubler/Buffer +2.0 dBm LO Drive Level 8.0 dB Conversion Gain 3.5 dB NF +5.0 dBm Input Third Order Intercept IIP3

Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN P1022-QF July 2008 - Rev 17-Jul-08 Features Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point RoHS Compliant SMD, 4x4 mm QFN Package