32261 Search Results

transistor power rating 5w

Abstract: DU2805S transistor Pout 5W B62152A
Contextual Info: e ec=.- = :-=s = = = -r-= =z r = an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 5W, 28V DU2805S v2.00 Features l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Koise Figure Than Bipolar Devices

P77 transistor

Abstract: 1.5 j63 .15 j63 BZ15 ECG5016A l 9113 J4 81 diode
Contextual Info: ,z= i-s L-J =7 f .- an AMP company * z z - = = Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry

b 595 transistor

Abstract: Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE
Contextual Info: =s = =-= ‘, = * an AMP .- -=r= FF company Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

DU1215S

Contextual Info: RF MOSFET Power Transistor, ISW, 12V 2 - 175 MHz DU1215S Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Specifically Designed for 12 Volt Applications

Transistor Equivalent list

Abstract: transistor A5G "RF MOSFET" DU2860U 300 Amp mosfet resistor 300 ohms equivalent transistor rf mosfet 800 v DU2860
Contextual Info: s2zz-f rgy= e -A5g =r- -=- an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 6OW, 28V DU2860U v2.00 Features A 4Gl. N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices

20 amp MOSFET transistor

Abstract: MOSFET POWER TRANSISTOR DU2880V
Contextual Info: an AMP company RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz DU2880V Features . N-Channel Enhancement Mode Device l DMOS Structure l Lower Capacitances for Broadband Operation l High Saturated Output Power l Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C

FL 1173

Abstract: Transistor A 1776 PH1516-10
Contextual Info: =_ F’E an AMP company Wireless Bipolar Power Transistor, 1.45 - 1.60 GHz 1OW PHl516-10 v2.00 Features l l l l l l IzS Designed for Cellular Base Station Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PEP Class A: +49 dBm Typ 3rd Order Intercept Point

UF2815OJ

Contextual Info: = an AMP =c= =z company = = RF MOSFET Power 100 - 500 MHz Transistor, 15OW, 28V UF2815OJ Features N-Channel Enhancement DMOS Structure Lower Capacitances Common Mode Device for Broadband Operation Source Configuration Lower Noise Floor Absolute Maximum Ratings at 25°C

PH1214-2M

Abstract: .15 j63 1.5 j63 1035 transistor
Contextual Info: an AMP company Radar Pulsed Power Transistor, 2W, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-2M v2.00 Features c_I- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors

PH0810-35

Abstract: Transistor c54 F1 J37 transistor 431 N cl 740
Contextual Info: = an AMP - company Wireless Bipolar Power Transistor, 850 - 960 MHz 35W PH081 o-35 Features Designed for Linear Amplifier Applications Class AB: -3OdBc Typ 3rd IMD at 15 Watts PEP Class A: +53dBm Typ 3rd Order Intercept Point Common Emitter Configuration

transistor b 595

Abstract: ATC100A PH1819-45
Contextual Info: = z-P= Coming Attractions an AMP company Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System

transistor c 2499

Abstract: transistor tj 2499 12OW capacitor 4 f XF 020 transistor D 2499 DU28120T 22 pf trimmer capacitor 81 210 W transistor 2499
Contextual Info: E XF .- an AMP company r = RF MOSFET Power Transistor, 2 - 175 MHz 12OW, 28V DU28120T Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices

13MM

Abstract: PH3134-2OL transistor f20 PH3134
Contextual Info: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

transistor c36

Abstract: wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134
Contextual Info: =5= ,-= E -= EF an AMP company * ,- .-z = Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty PH3134-11s 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

Di 762 transistor

Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33
Contextual Info: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System

TRANSISTOR Z4

Contextual Info: an AMP company Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors

13MM

Abstract: 817j18
Contextual Info: I .-em _- an AMP company Linear Power Transistor, 40W 850 - 1450 MHz Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class AB Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System

Contextual Info: E-Series Coupler 902 - 928 MHz ESDC-10-4 V2.00 SM-1 Features ● ● Coupling: +10 dB Typical Surface Mount Specifications @ 25°C Frequency Range 902 - 928 MHz Coupling 902 - 928 MHz Nominal 10 ±0.9 dB Flatness 0.4 dB Main Line Loss 902 - 928 MHz Typical

Contextual Info: E-Series Plug-In Mixer 2 - 500 MHz EMK-1H V3.00 R-5 Features ● ● LO Power: +17 dBm Up to +14 dBm RF Specifications @ 25°C Frequency Range RF LO IF 2 - 500 MHz 2 - 500 MHz DC - 500 MHz Conversion Loss dB 4 - 250 MHz 2 - 500 MHz Typical 6.0 7.0 Maximum

ESQ-2-88

Abstract: S0214
Contextual Info: E-Series 2-Way 90° Power Divider 30 - 90 MHz ESQ-2-88 V3.00 Features ● ● R-2 2 Way 90° Specifications @ 25°C Frequency Range 30 - 90 MHz Insertion Loss 30 - 90 MHz Typical 0.6 dB Maximum 1.0 dB Isolation 30 - 90 MHz Typical 23 dB Minimum 20 dB Amplitude Unbalance

MA40135

Abstract: MA40133 ma40131
Contextual Info: Silicon Beam Lead Schottky Barrier Diodes MA40130 Series V3.00 Features ● ● ● ● Case Style 965 Planar Construction Surface Oriented Diode Strong Beam Construction Low Noise Figure (Mixer Diodes) Low, Medium and High Barrier Diodes Available Description

AMS117

Abstract: AMS-117
Contextual Info: Low Noise Amplifier, 8 dB Gain 10 - 200 MHz AM-/AMC-/AMS-117 V2.00 Features ● ● ● ● FP-2 1.3 dB Typical Midband Noise Figure +30 dBm Typical Midband Intercept Ideal for Broadband IF Applications Fully Hermetic Package AMS-117 PIN 0.015 DIA ±0.005

Contextual Info: Preliminary Specifications Surface Mount Frequency Synthesizer DATA 1005 - 1065 MHz MLS9900-01035 V1.00 Features ● ● ● ● ● Miniature Size Surface Mount Package Electrically Shielded Low Phase Noise Integral Buffer Amplifier Description The MLS9900-01035 frequency synthesizer combines a

Contextual Info: E-Series 3-Way 0° Power Divider 5 - 500 MHz ES-3-1W V3.00 R-1 Features ● ● 3 Way 0° Specifications @ 25°C Frequency Range 5 - 500 MHz Insertion Loss 5 -50 MHz 50 - 250 MHz 250 - 500 MHz Typical 0.4 dB 0.4 dB 0.8 dB Maximum 0.8 dB 1.4 dB 1.4 dB Isolation