320N Search Results

25LS2521

Abstract: 25LS244 8051 interface 8155 8251 with 8086 9511A 6259A 8155 programmable peripheral interface 9517A AMZ8536 8253 interface with 8086 Peripheral
Contextual Info: MOS Microprocessor MOS Microprocessor Family Selector Guide 8086/88 8085A 8085A-2 8080A Z8001/2t Z8001/2-A Clock Parted 200ns 320ns 200ns Clock Generator 8284A On-Chip On-Chip 8224 8127 8127 Arithmetic Processing Unit 8087 9511A-1 9512-1 9 5Í1A -4 9512-1

CDP1802

Abstract: CDP1824 CDP1824C CDP1824CD CDP1824CE CDP1824CEX CDP1824D CDP1824E CDP1824EX
Contextual Info: CDP1824, CDP1824C TM 32-Word x 8-Bit Static RAM March 1997 Features Description • Fast Access Time - VDD = 5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 710ns - VDD = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320ns

CDP1802

Abstract: CDP1824 CDP1824C CDP1824CD3 CDP1824D3
Contextual Info: CDP1824/3, CDP1824C/3 High-Reliability CMOS 32-Word x 8-Bit Static Random-Access Memory March 1997 Features Description • Access Time - 610ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . at VDD = 5V - 320ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . at VDD = 10V

CDP1802

Abstract: CDP1824 CDP1824C CDP1824CD CDP1824CE CDP1824CEX CDP1824D CDP1824E CDP1824EX
Contextual Info: CDP1824, CDP1824C 32-Word x 8-Bit Static RAM March 1997 Features Description • Fast Access Time - VDD = 5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 710ns - VDD = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320ns The CDP1824 and CDP1824C are 32-word x 8-bit fully static

2sk1257

Abstract: 20DRAM CRA-600
Contextual Info: P ow er F-MOS FET 2S K 12 5 7 2SK1257 Silicon N-channel Power F-MOS FET • • • • • ■ P a c k a g e D im ensions F e a tu re s Low ON resistance Rt* on : Rj* (on) 1 = 0 .0 2 4 il (typ.) High switching ra te : 1, = 320ns (typ.) No secondary breakdown

CDP1824

Abstract: CDP1824EX CDP1802 CDP1824C CDP1824CD CDP1824CE CDP1824CEX CDP1824D CDP1824E
Contextual Info: CDP1824, CDP1824C S E M I C O N D U C T O R 32-Word x 8-Bit Static RAM March 1997 Features Description • Fast Access Time - VDD = 5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 710ns - VDD = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320ns

Contextual Info: CDP1824/3 iS ï h a r r i s 1 Q 2 4 ^ s/ 3 S E M I C O N D U C T O R High-Reliability CM O S 32-Word x 8 Bit Static Random-Access Memory February 1992 Features Description • Access Time: 610ns.e v D0 = 5V 320ns. VOD = 10V

CDP1802

Abstract: CDP1824 CDP1824C CDP1824CD3 CDP1824D3
Contextual Info: CDP1824/3, CDP1824C/3 TM High-Reliability CMOS 32-Word x 8-Bit Static Random-Access Memory March 1997 Features Description • Access Time - 610ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . at VDD = 5V - 320ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . at VDD = 10V

CDP1824

Abstract: CDP1824 MICROPROCESSOR
Contextual Info: CDP1824, CDP1824C Semiconductor 32-Word x 8-Bit Static RAM March 1997 Features Description Fast Access Tim e - V d d = 5 V .710ns - V DD = 1 0 V . 320ns

Contextual Info: 320NS R Naina Semiconductor emiconductor Ltd. Standard andard Recovery Diodes (Stud and Flat Base Type) Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted)

photomultiplier

Abstract: r821 diodes DY10 R821
Contextual Info: PHOTOMULTIPLIER TUBE R821 For Astro-physics and Other Ultraviolet Radiation Detection Solar Blind Response 160nm to 320nm , Cs-Te Photocathode 19mm (3/4 Inch) Diameter, 10-stage, Head-On GENERAL Parameter Spectral Response Wavelength of Maximum Response Material

AM9016

Abstract: AM9016E AM9016D K x 1 DRAM
Contextual Info: Am9016 Am9016 16,384 x 1 Dynamic RAM DISTINCTIVE CHARACTERISTICS • • • Replacement for MK4116 High-speed operation - 150ns access, 320ns cycle COM'L ; 200ns access, 375ns cycle (MIL) Three-state output • • • RAS only, RMW and Page mode clocking options

IXGN320N60A3

Contextual Info: Preliminary Technical Information IXGN 320N60A3 PolarHVTM IGBT VCES = 600 V IC25 = 320 A VCE sat ≤ 1.25 V Optimized for Switching up to 5 kHz Preliminary Data Sheet E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

CDP1802 MICROPROCESSOR

Abstract: CDP1802 CDP1 series cdp1800series CDP1824 CDP-1802 CDP1800-series CDP1824CD CDP1824CD3 CDP1824CE
Contextual Info: • Access Time - 610ns .at VDD = 5V - 320ns .at VDD = 10V • No Precharge or Clock Required Ordering Information PACKAGE 5V 10V CDP1824CD3 CDP1824D3 SBDIP

Contextual Info: 320NS R Naina Semiconductor emiconductor Ltd. Standard andard Recovery Diodes (Stud and Flat Base Type) Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted)

cdp1824

Contextual Info: CDP1824, CDP1824C H A F R F R IS S E M I C O N D U C T O R 32-Word x 8-Bit Static RAM March 1997 Features Description Fast Access Time - V dd = 5 V . 710ns - VDD = 1 0 V . 320ns

R6834

Abstract: DY11
Contextual Info: PHOTOMULTlPLlER TUBE R6834 For Astrophysics and other ultraviolet radiation detection 28mm 1–1/8 Inch diameter, 11–stage, Cs–Te photocathode Solar blind response(160nm to 320nm), Head–on type GENERAL Description / Value 160 to 320 240 Cs–Te 25 Synthetic silica

CDP1824

Abstract: CDP1802 CDP1824C CDP1824CD3 CDP1824D3 CDP1824D
Contextual Info: CDP1824/3, CDP1824C/3 S E M I C O N D U C T O R High-Reliability CMOS 32-Word x 8-Bit Static Random-Access Memory March 1997 Features Description • Access Time - 610ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . at VDD = 5V - 320ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . at VDD = 10V

Contextual Info: 320NS R Naina Semiconductor emiconductor Ltd. Standard andard Recovery Diodes (Stud and Flat Base Type), Type) 320A Features Diffused Series Industrial grade Available in Normal and Reverse polarity Metric and UNF thread type • • • • Electrical Specifications (TC = 25oC, unless otherwise noted)

208H

Contextual Info: 2 . Sch em atic: 1. D im ensions: 1 O- X o XFMRS R32M YYWW mo in 2 o- o A 0.530 3. E lectrical Specs: 0CL: P insl — 2 320nH±20% @500KHz, 0.1V Max OCL: P in s l- 2 285nH Typ @500KHz, 0.1V, 0 /4 1 A d c DC Res.: P in s l— 2 0 .5 3 m 0 h m s ± 1 1.3%

IC 4027 pin diagram

Abstract: IC CD 4027 purpose of IC 4027 MK4027 MK4027-1 MK4027-3 ram 4027 4096X1-BIT IC 4027 501C
Contextual Info: MQSTEK 4096x1-BIT DYNAMIC RAM M K 4 0 2 7 J/N -2 /3 F E A TU R E S □ Ind ustry standard 16-pin DIP (M K 4096) co n fig u ra tio n □ 120ns access tim e, 320ns cycle (M K 4027-1) 150ns access tim e , 320ns cycle (M K 40 27 -2) 200ns access tim e, 375ns cycle (M K 4027-3)

ADP1828

Abstract: sharp lc-32 schematic BAT54 reset 20SP180M 2R5TPD1000M5 ADP1829 BAT54 BSC030N03LS BSC080N03LS ADP1828ACPZ-R7
Contextual Info: Synchronous Buck PWM, Step-Down, DC-to-DC Controller ADP1828 to regulate an output voltage as low as 0.6 V to 85% of the input voltage and is sized to handle large MOSFETs for point-of-load regulators. The ADP1828 is ideal for a wide range of high power applications, such as DSP and processor core I/O power, and

EL4093CS

Abstract: EL4093 FN7159 EL4093CN EL4581
Contextual Info: EL4093 Data Sheet January 1996, Rev B FN7159 300MHz DC-Restored Video Amplifier Features The EL4093 is a complete DCrestored video amplifier subsystem, featuring low power consumption and high slew rate. It contains a current feedback amplifier and a sample and hold amplifier designed to stabilize video

Contextual Info: LM5119/LM5119Q www.ti.com SNVS676F – AUGUST 2010 – REVISED FEBRUARY 2013 LM5119/LM5119Q Wide Input Range Dual Synchronous Buck Controller Check for Samples: LM5119/LM5119Q FEATURES 1 • 2 • • • • • • LM5119Q is an Automotive Grade product that