32 MAG WIRE Search Results

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Contextual Info: Series A1000 & Series CB1000 Single Row Terminal Blocks Single & Double Row Filtered Connectors CB10210707 A102206 Euro-MAG Series PCB – Spring Clamp SPECIFICATIONS Rating: 20A, 150V Center Spacing: .325” 8.26 mm Wire Range: #14-22 AWG CU Screw Size: #6-32 zinc plated philslot wire-ready screws

IC 3140

Abstract: transistor NEC D 882 p ATC 1084 nec d 882 p 901 704 16 08 55 nec d 882 p datasheet 100A5R1CP150X IMT-2000 NE651R479A NE651R479A-T1
Contextual Info: 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS

nec d 882 p

Abstract: 100A5R1CP150X IMT-2000 NE651R479A NE651R479A-A NE651R479A-T1-A nec 1251
Contextual Info: NEC's 1 W, L&S-BAND NE651R479A Medium POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,

Contextual Info: TDK RF Products for Wireless LAN 02/01/05 for 2.4GHz Multilayer BalBPF Start Freq. Stop Freq. Ins. Loss MHz MHz dB MAX 2400 2500 2.4 2400 2500 1.7 2400 2500 1.5 2400 2500 3.0 2400 2500 3.3 Sample Available New Lineup Under Developing Bal.imped. ohm 50 50

FL 1173

Abstract: Transistor A 1776 PH1516-10
Contextual Info: =_ F’E an AMP company Wireless Bipolar Power Transistor, 1.45 - 1.60 GHz 1OW PHl516-10 v2.00 Features l l l l l l IzS Designed for Cellular Base Station Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PEP Class A: +49 dBm Typ 3rd Order Intercept Point

AT-310

Abstract: AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-31033-BLK AT-31033-TR1 AT31033 5965-8919E
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-31011: 0.9 dB NF, 13 dB GA

TRANSISTOR C 4460

Abstract: AT-41533 544 code marking amplifier zo 103 ma AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E
Contextual Info: General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and

Contextual Info: Wtipl H E W L E T T mLftMP A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Am plifier Tested 900 MHz

ATF-50189-TR1

Abstract: ATF-50189-BLK ATF-50189 diode MARKING CODE 917 MO229
Contextual Info: Agilent ATF-50189 Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Features • High Linearity and P1dB • Low Noise Figure Description Agilent Technologies’s ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET packaged in a low

AT-32011-BLK

Abstract: AT-32011 AT-32011-TR1 AT-32033 AT-32033-BLK AT-32033-TR1 900 mhz oscillator ckt
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-32011: 1 dB NF, 14 dB GA

SOT 23 AJW

Abstract: transistor TT 3034 Resistors 2306 181 AT-32032 AT-41532 AT-41532-BLK S21E 41532 mount chip transistor 332
Contextual Info: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA

HXTR3685

Abstract: HXTR-7111 HXTR-3615 hxtr-3685 HXTR3 HXTR-7111TXV hxtr-7011
Contextual Info: HEWLETT-PACKARD-. CMPNTS SDE D B M447SÖ4 QQOSSbb 3 El T " 31“ /? T-31'21 Low N oise Transistors HXTR-7011 Chip HXTR-7111, TX and TXV HXTR-3615, TX and TXV HXTR-3645, TX and TXV HXTR-3675, TX and TXV HSMX-3635 HSMX-3655 Technical Data Features D escription

Contextual Info: MwT-A1 12 GHz High Gain GaAs FET M ic r o w a v e T e c h n o l o g y Units in tun I T 10 dB GAIN A T 12 GHz EXCELLENT FOR FEEDBACK AMPLIFIER APPLICATIONS 100 MHz T O 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE

transistor TT 2146

Abstract: AT-32032 AT-32032-BLK AT-32032-TR1 60668 transistor ajw 64256
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32032 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance at 2.7 V, 5 mA: 900 MHz: 1 dB NF, 15 dB GA

8909E

Abstract: AT-42000 AT-42000-GP4 S21E
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz

83072

Abstract: sc 179495 MGA-62563 38436 164-901 901 704 16 08 55 117309 MMIC SOT 363 marking CODE 81 MMIC SOT 363 marking CODE 86 low noise MGA-62563-BLK
Contextual Info: Agilent MGA-62563 Current-Adjustable, Low Noise Amplifier Data Sheet Features • Single +3V or +5V supply Description Agilent’s MGA-62563 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent linearity and low noise figure for applications from 0.1

Contextual Info: What mLUM HEW LETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz

TGF1350

Contextual Info: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation

2222A

Abstract: AT-38086 AT-38086-BLK AT-38086-TR1
Contextual Info: 4.8 V NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38086 Features • 4.8 Volt Pulsed pulse width = 577 µsec, duty cycle = 12.5% /CW Operation 85 mil Plastic Surface Mount Package Outline 86 • +28 dBm Pulsed Pout @ 900 MHz, Typ. • +23.5 dBm CW Pout

15284

Abstract: EMA406C
Contextual Info: Excelics EMA406C TENTATIVE DATA SHEET 26 - 32 GHz Low Noise MMIC FEATURES • • • • • • • • 26 -32 GHz BANDWIDTH +20.0 dBm TYPICAL OUTPUT POWER 21 dB ± 1.5 dB TYPICAL POWER GAIN FOUR SECTION, DISTRIBUTED AMPLIFIER DUAL BIAS SUPPLY 0.3 MICRON RECESSED “MUSHROOM” GATE

1N4153

Abstract: NEL2001 NEL200101-24 2.2 uf 50v electrolytic
Contextual Info: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES NEL200101-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 0.7 W 2.0 W • LOW IM DISTORTION: Class A Class AB PACKAGE OUTLINE 01 -36 dBc @ 0.5 W PEP (Class A) -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:

Contextual Info: 18–40 GHz Surface Mount Voltage Variable Attenuator AV850M2-A2 Patent Pending Features • Surface Mount Package ■ 30 dB Attenuation Range ■ +10 dBm P1 dB All Attenuation States ■ Low Insertion Loss ■ 100% RF and DC Testing Description The AV850M2-A2 is a broadband millimeterwave voltage

Contextual Info: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its high power added efficiency (up to 50%) and single positive

FMM5703X

Contextual Info: FMM5703X 24-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2dB Typ. @ f=32 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=32 GHz • Wide Frequency Band: 24-32 GHz • High Output Power: 9dBm (Typ.) @ f=32 GHz • Impedance Matched Zin/Zout = 50Ω