31MAR08 Search Results
31MAR08 Datasheets Context Search
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11SM701-T
Abstract: TWY2000 rj 06
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31mar0811sm701-ttwy20000l0h-h--26+5 | |
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Contextual Info: F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER PLAST IC PLUNGER REV DOCUMENT 8 0038442 CHANGED SSK BY 31MAR08 CHECK BLR 11SM701-H58 PRODUCT CODE TWY1990 •296 ± .010 .0 2 0 MAX PR ETRAVEL B ,I5 6 ± .0 I0 DIA-*- B "♦ 1 .33 OPERATING P O SI TI O N 1 _ t-.0 9 4 f.0 l0 |
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fo-55111-a11sm701-h5831mar08j088i+4 | |
Si3407DVContextual Info: New Product Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0240 at VGS = - 4.5 V - 8.0a 0.0372 at VGS = - 2.5 V a - 8.0 • • • • Qg (Typ.) 21 nC TrenchFET Power MOSFET PWM Optimized |
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si3407dvsi3407dv-t1-e308-apr-05 | |
SUM75N15-18P-E3Contextual Info: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch |
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sum75n15-18po-263sum75n15-18p-e308-apr-05 | |
Si6463BDQContextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT |
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si6463bdqsi6459bdq-t1-ge308-apr-05 | |
72511
Abstract: Si6433BDQ
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si6433bdqsi6433bdq-t1-ge311-mar-1172511 | |
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Contextual Info: 4.5-10.5 GHz GaAs Receiver QFN, 4x4mm R1011-QH March 2008 - Rev 31-Mar-08 Features Integrated LNA, Mixer and LO Buffer Amplifier 1.8 dB Noise Figure 13.0 dB Conversion Gain 4x4mm QFN Package 100% RF, DC and NF Testing General Description Mimix Broadband’s 4.5-10.5 GHz QFN packaged receiver has |
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31-mar-08r1011-qhxr1011-qh | |
COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
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vse-db0001-1102i8262color tv tube charger circuit diagramsmbrf 1015 ct+8 | |
MOSFET TSSOP-8
Abstract: SI6410DQ
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si6410dqsi6410dq-t1-ge32011/65/eu2002/95/ec+2 | |
si6465Contextual Info: Si6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V ± 8.8 -8 0.017 at VGS = - 2.5 V ± 7.4 0.025 at VGS = - 1.8 V ± 6.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated |
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si6465dqsi6465dq-t1-ge32011/65/eu2002/95/ec+2 | |
313BContextual Info: New Product SUM110N04-2m1P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.0021 at VGS = 10 V 110 0.0024 at VGS = 4.5 V 110 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 240 nC |
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sum110n04-2m1po-263sum110n04-2m1p-e311-mar-11+1 | |
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Contextual Info: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8 |
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si6415dqsi6415dq-t1si6415dq-t1-ge32011/65/eu+2 | |
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Contextual Info: Si6443DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 8.8 0.019 at VGS = - 4.5 V - 7.0 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT APPLICATIONS • Battery Switch |
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si6443dqsi6443dq-t1-ge308-apr-05 | |
SI6410DQContextual Info: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D |
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si6410dqsi6410dq-t1-ge311-mar-11 | |
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80681Contextual Info: New Product SUP90N04-2m8P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.0028 at VGS = 10 V 90 0.003 at VGS = 4.5 V 90 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 240 nC |
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sup90n04-2m8po-220absup90n04-2m8p-e32011/65/eu+3 | |
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Contextual Info: Si6466ADQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.014 at VGS = 4.5 V 8.1 0.020 at VGS = 2.5 V 6.6 • Halogen-free • TrenchFET Power MOSFETs • 100 % Rg Tested RoHS COMPLIANT D TSSOP-8 D |
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si6466adqsi6466adq-t1-ge308-apr-05 | |
Si6467BDQContextual Info: Si6467BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.0125 at VGS = - 4.5 V - 8.0 0.0155 at VGS = - 2.5 V - 7.0 0.020 at VGS = - 1.8 V - 6.0 • Halogen-free • TrenchFET Power MOSFETs Pb-free |
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si6467bdqsi6467bdq-t1si6467bdq-t1-ge318-jul-08 | |
Si6404DQContextual Info: Si6404DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.009 at VGS = 10 V 11 30 0.010 at VGS = 4.5 V 10 0.014 at VGS = 2.5 V 8.8 • Halogen-free • TrenchFET Power MOSFETS: 2.5 V Rated • 30 V VDS RoHS |
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si6404dqsi6404dq-t1-ge318-jul-08 | |
Si6466ADQContextual Info: Si6466ADQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.014 at VGS = 4.5 V 8.1 0.020 at VGS = 2.5 V 6.6 • Halogen-free • TrenchFET Power MOSFETs • 100 % Rg Tested RoHS COMPLIANT D TSSOP-8 D |
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si6466adqsi6466adq-t1-ge318-jul-08 | |
S8060Contextual Info: Tape Information Vishay Siliconix MICRO FOOT 3 x 2: 0.8 mm PITCH, 0.275 mm BUMP HEIGHT 4.00 ± 0.10 4.00 ± 0.10 + 0.10 Ø 1.50 - 0.00 A 2.00 ± 0.05 B B 1.75 ± 0.1 3.5 ± 0.05 0.30 8.0 +- 0.10 SECTION A-A A SECTION B-B Notes 1. 10-sprocket hole pitch cumulative tolerance ± 0.2. |
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10-sprocket93-5211-x92-5210-xs-80609-rev+3 | |
80681
Abstract: c312a sup90n04-2m8p
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sup90n04-2m8po-220absup90n04-2m8p-e318-jul-08+2 | |
Si6410DQContextual Info: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D |
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si6410dqsi6410dq-t1-ge318-jul-08 | |
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Contextual Info: New Product SUM110N04-2m1P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.0021 at VGS = 10 V 110 0.0024 at VGS = 4.5 V 110 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 240 nC |
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sum110n04-2m1po-263sum110n04-2m1p-e32002/95/ec+3 | |
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Contextual Info: Si6404DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.009 at VGS = 10 V 11 30 0.010 at VGS = 4.5 V 10 0.014 at VGS = 2.5 V 8.8 • Halogen-free • TrenchFET Power MOSFETS: 2.5 V Rated • 30 V VDS RoHS |
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si6404dqsi6404dq-t1-ge32002/95/ec2011/65/eu+2 | |