SI6466ADQ Search Results

Si6466ADQ

Abstract: S-00984
Contextual Info: Si6466ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V 8.1 0.020 @ VGS = 2.5 V 6.6 D TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6466ADQ * Source Pins 2, 3, 6 and 7 must be tied common.

Contextual Info: Si6466ADQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.014 at VGS = 4.5 V 8.1 0.020 at VGS = 2.5 V 6.6 • Halogen-free • TrenchFET Power MOSFETs • 100 % Rg Tested RoHS COMPLIANT D TSSOP-8 D

0715

Abstract: AN609 Si6466ADQ
Contextual Info: Si6466ADQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si6466ADQ

Contextual Info: Si6466ADQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.014 at VGS = 4.5 V 8.1 0.020 at VGS = 2.5 V 6.6 • Halogen-free • TrenchFET Power MOSFETs • 100 % Rg Tested RoHS COMPLIANT D TSSOP-8 D

Si6466ADQ

Abstract: Si6466ADQ-T1
Contextual Info: Si6466ADQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V 8.1 0.020 @ VGS = 2.5 V 6.6 D TrenchFETr Power MOSFET D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D * Source Pins 2, 3, 6 and 7

74232

Abstract: Si6466ADQ Si6466ADQ-T1 Si6466DQ Si6466DQ-T1
Contextual Info: Specification Comparison Vishay Siliconix Si6466ADQ vs. Si6466DQ Description: Package: Pin Out: N-Channel, 2.5 V G-S MOSFET TSSOP-8 Identical Part Number Replacements Si6466ADQ-T1-E3 Replaces Si6466DQ-T1-E3 Si6466ADQ-T1 Replaces Si6466DQ-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Si6466ADQ

Abstract: Si6466ADQ-T1
Contextual Info: Si6466ADQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V 8.1 0.020 @ VGS = 2.5 V 6.6 D TrenchFETr Power MOSFET D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D * Source Pins 2, 3, 6 and 7

Contextual Info: Si6466ADQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.014 at VGS = 4.5 V 8.1 0.020 at VGS = 2.5 V 6.6 • Halogen-free • TrenchFET Power MOSFETs • 100 % Rg Tested RoHS COMPLIANT D TSSOP-8 D

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

q406 transistor

Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

si5480

Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT