31MAY2011 Search Results

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 LOC HM ALL RIGHTS RESERVED. D 23.45 [ .923 ] 1 REVISIONS DIST 00 P LTR DESCRIPTION DATE DWN APVD A RLSD; ECO-11-010701 31MAY2011 GG RA B REV; ECO-13-016164 15OCT2013

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION 5 6 7 2 3 4 - TE CONNECTIVITY REVISIONS L0C DIST AA 00 ALL RIGHTS RESERVED. P ECHANICAL: LTR DESCRIPTION DATE DWN APVD 3 ADD A DASH NUMBER 2- 1840801-1 31MAY2011 PP LJ A ECO—11—017525 01SEP2011 RL

2N62K3

Abstract: STD2N62K3 STP2N62K3
Contextual Info: STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3 N-channel 620 V, 3 Ω, 2.2 A SuperMESH3 Power MOSFET in D²PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB Order codes VDSS RDS on max ID PTOT 3 2 3 STB2N62K3

GP20

Abstract: J-STD-002 RGP20A RGP20J
Contextual Info: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 RGP20A thru RGP20J Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction

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Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 GP20A thru GP20J Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction

Contextual Info: STH260N6F6-2 N-channel 60 V, 0.0016 Ω, 180 A H²PAK-2 STripFET VI DeepGATE™ Power MOSFET Preliminary data Features Order code VDSS RDS on max ID STH260N6F6-2 60 V < 0.002 Ω 180 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness

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Contextual Info: MSP430F543xA, MSP430F541xA www.ti.com SLAS655B – JANUARY 2010 – REVISED OCTOBER 2010 MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • • • • Low Supply Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active

Contextual Info: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 DTV56, DTV56F, DTV56B Vishay General Semiconductor High Voltage Damper Diodes TO-220AC FEATURES ITO-220AC • Glass passivated chip junction • High breakdown voltage capability

Contextual Info: PD- 96152A IRF7754GPbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free Halogen-Free VDSS RDS(on) max ID -12V 25mΩ@VGS = -4.5V 34mΩ@VGS = -2.5V

Contextual Info: TPS728xx Series www.ti.com SBVS095 – AUGUST 2007 200mA Low-Dropout Linear Regulator with Pin-Selectable Dual-Voltage Level Output FEATURES 1 • • • • 2 • • • • • Very Low Dropout: 230mV Typical at 200mA 3% Accuracy Over Load/Line/Temperature

Contextual Info: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 CGP20, DGP20 Vishay General Semiconductor Miniature Clamper/Damper Glass Passivated Rectifier FEATURES • Superectifier structure • Cavity-free glass passivated junction SUPERECTIFIER

Contextual Info: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 BYS459-1500S, BYS459F-1500S & BYS459B-1500S Vishay General Semiconductor High Voltage Damper Diodes TO-220AC FEATURES ITO-220AC • Glass passivated chip junction • Fast reverse recovery time

Contextual Info: MSP430F543xA, MSP430F541xA www.ti.com SLAS655B – JANUARY 2010 – REVISED OCTOBER 2010 MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • • • • Low Supply Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active

S1DA

Abstract: s1ma
Contextual Info: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 S1BA thru S1MA Vishay General Semiconductor Standard Surface Mount Glass Passivated Rectifier FEATURES • • • • • • • Low profile package Ideal for automated placement

Contextual Info: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 DTV32, DTV32F, DTV32B Vishay General Semiconductor High Voltage Damper Diodes TO-220AC FEATURES ITO-220AC • Glass passivated chip junction • High breakdown voltage capability

Contextual Info: STH260N6F6-2 N-channel 60 V, 1.7 mΩ typ., 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet — production data Features Order code VDSS RDS on max ID STH260N6F6-2 60 V < 2.4 mΩ 180 A • Low gate charge ■ Very low on-resistance

Contextual Info: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 BYS459-1500, BYS459F-1500 & BYS459B-1500 Vishay General Semiconductor High Voltage Damper Diodes TO-220AC FEATURES ITO-220AC • Glass passivated chip junction • Fast reverse recovery time

Contextual Info: TPS728xx Series www.ti.com SBVS095 – AUGUST 2007 200mA Low-Dropout Linear Regulator with Pin-Selectable Dual-Voltage Level Output FEATURES 1 • • • • 2 • • • • • Very Low Dropout: 230mV Typical at 200mA 3% Accuracy Over Load/Line/Temperature

TPD4E001DRSR

Contextual Info: TPD4E001 SLLS682F – JULY 2006 – REVISED MAY 2011 www.ti.com 4-CHANNEL ESD PROTECTION ARRAY WITH 1.5-pF IO CAPACITANCE Check for Samples: TPD4E001 FEATURES • 1 • 2 • • • • • • • 4-Channel ESD Clamp Array to Enhance System-Level ESD Protection

sb160a

Abstract: SB140A
Contextual Info: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 SB120A thru SB160A Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching

7531 standard

Abstract: ST marking so-8 SLVU2.8-8A1 so-8 marking STMicroelectronics STMicroelectronics marking code date SO-8 marking ZZ 3M Philippines 78MG
Contextual Info: SLVU2.8 Low voltage unit for Gigabit Ethernet protection Features • Peak pulse current : IPP = 30 A 8/20 µs ■ Low capacitance : Ctyp = 1.5 pF ■ Stand-off voltage : VR = 2.8 V ■ Low leakage current : IRmax = 0.2 µA ■ ECOPACK 2 compliant component

Contextual Info: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 DTV56, DTV56F, DTV56B Vishay General Semiconductor High Voltage Damper Diodes TO-220AC FEATURES ITO-220AC • Glass passivated chip junction • High breakdown voltage capability

Contextual Info: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 DTV32, DTV32F, DTV32B Vishay General Semiconductor High Voltage Damper Diodes TO-220AC FEATURES ITO-220AC • Glass passivated chip junction • High breakdown voltage capability