318E Search Results

sot-223 body marking D K Q F

Contextual Info: MOTOROLA Order this document by MMFT108T1/D SEMICONDUCTOR TECHNICAL DATA T Field Effect Transistor N-Channel Enhancement-Mode Logic Level SOT-223 MMFT108T1 TM OS 2 ,4 DRAIN TMOS FET TRANSISTOR N-CHANNIEL — ENHANCEMENT CASE 318E-04, STYLE 3 SOT-223 TO-261AA

MAC12SM

Abstract: MCR100-8 thyristor C106M MAC12N Mcr22-8 301 maC97A8 MCR106-6 MAC22 mac97
Contextual Info: SCRs Silicon Controlled Rectifiers Style 4 K A K K G TO−92 Note 1 (TO−226AA) Case 029 Style 10 0.8 30 2N5060 60 2N5061 100 2N5062 200 2N5064 100 MCR100−3 200 MCR100−4 400 MCR100−6 600 MCR100−8 200 A SOT−223 Case 318E Style 10 G A K TO−225AA

motorola p1f

Abstract: P1F motorola SOT-223 P1f P1F marking p2f marking "device marking" ah sot223 NPN marking BH BS3 MARKING AS3 MARKING
Contextual Info: SOT-223 Devices Maximum die size 80 mil x 100 mil CASE 318E-04 Plastic-Encapsulated General Purpose Amplifiers Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h p E @ lc Device I Max mA Marking V BR CEO Min I BH 80 40 250 150 80 40 25 150 NPN I BCP56T1

Contextual Info: PZTA42T1* CASE 318E-04, STYLE 1 TO-261AA M A X IM U M R A T IN G S Rating Symbol Value v CEO 300 Vdc Collector-Base Voltage (Open Emitter) VCBO 300 Vdc Emitter-Base Voltage (Open Collector) v EBO Collector-Em itter Voltage (Open Base) Collector Current (DC)

transistor P2P

Contextual Info: PZTA92T1* CASE 318E-04, STYLE 1 TO-261AA M AXIM UM RATINGS Unit Symbol Value Collector-Emitter Voltage v CEO -3 0 0 Vdc Collector-Base Voltage v CBO -3 0 0 Vdc Emitter-Base Voltage Ve b o - 5 .0 Vdc 'C -5 0 0 mAdc Total Power Dissipation up to T ^ = 25 C‘

MT108

Abstract: MMFT108T1
Contextual Info: MOTOROLA SEMICONDUCTOR ~ w TECHNICAL Order this document byMMH108T1/D DATA Field Effect ~ansistor MMFTI08TI N-Channel Enhancement-Mode Logic Level SOT-223 TMOS- 2,4 DRAIN 1 GATE @ CASE 318E+4, STVLE 3 SOT-223 ~0-261AA MAXIMUM RATINGS I Rating I Drain-t&SourceVoltage

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 TO−261 CASE 318E−04 ISSUE N DATE 10 AUG 2009 SCALE 1:1 D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE E 1 2 3 b e1 e 0.08 (0003) C q A A1 DIM

Contextual Info: PZT2907AT1* M A X IM U M R A T IN G S Rating Collector-Emitter Voltage Symbol Value CASE 318E-04, STYLE 1 TO-261AA Unit v CEO -6 0 Vdc Collector-Base Voltage VCBO -6 0 Vdc Emitter-Base Voltage Ve b O - 5.0 Vdc Collector Current 'c -6 0 0 mAdc Total Power Dissipation, T ^ = 25 ‘C*

Contextual Info: PZTA42T1* CASE 318E-04, STYLE 1 TO-261AA M A X IM U M R A T IN G S Rating Symbol Value C o lle c to r - E m itte r V o lta g e ( O p e n B a s e ) v CEO 300 Vdc COLLECTOR C o lle c to r - B a s e V o lta g e ( O p e n E m itte r) VCBO 300 Vdc 24 v EBO 6.0

751A-02

Abstract: 318D-03 751B-03
Contextual Info: 2 CASE 318-07 SOT-23 TO-236AB CASE 318D-03 SC-59 CASE 646-06 1 CASE 751A-02 SO-14 4r 3 CASE 318E-04 SOT-223 (TO-261AA) CASE 648-08 1 Small-Signal Tuning and Switching Diodes CASE 751B-03 SO-16 Packaging options include plastic DIPs and surface mount packages. Most SOT-23, SC-59 and SOT-223 package devices

MT108 motorola transistor

Abstract: mt108 MMFT108T1 SMD310
Contextual Info: MOTOROLA Order this document by MMFT108T1/D SEMICONDUCTOR TECHNICAL DATA Field Effect Transistor MMFT108T1 N–Channel Enhancement–Mode Logic Level SOT–223  2, 4 DRAIN TMOS FET TRANSISTOR N–CHANNEL — ENHANCEMENT 1 GATE 4 3 SOURCE 1 2 3 CASE 318E–04, STYLE 3

AKD SOT223

Contextual Info: PZT2222AT1* CASE 318E-04, STYLE 1 TO-261AA M A X IM U M R A T IN G S R atin g S ym bol V alue C o lle cto r-E m itte r V oltage v CEO 40 Vdc C o lle cto r-B a se V oltage v CB O 75 Vdc E m itter-B ase Voltage (O p en C ollector) v EBO 60 V dc 'C 600 m A dc

Contextual Info: PZT3904T1G, SPZT3904T1G General Purpose Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−223 CASE 318E

SCR 2N6399

Abstract: SCR C106m SCR 1 c106d C106B mCr106M SCR C106D1 CASE369A 2N650 2N6509 SCR 2N6403
Contextual Info: SCRs Silicon Controlled Rectifiers Style 4 K A K K G TO–92 1 (TO–226AA) Case 029 Style 10 0.8 30 2N5060 0.8 60 2N5061 100 2N5062 200 2N5064 100 MCR100–3 200 MCR100–4 400 MCR100–6 600 MCR100–8 200 4.0 4.0 4.0 SOT–223 Case 318E Style 10 G A K

transistor P2D

Abstract: SOT-223 AKD AKD SOT223
Contextual Info: PZTA92T1* CASE 318E-04, STYLE 1 TO-261AA MAXIMUM RATINGS Rating Symbol Value Unit v CEO -3 0 0 V dc C o lle cto r-B a se V oltage v CBO -3 0 0 V dc E m itter-B ase V oltage v EBO - 5.0 Vdc 'C -5 0 0 m A dc C o lle cto r-E m itte r Voltage C o lle cto r C urrent

diode MARKING c9

Abstract: MV7005T1 V7005
Contextual Info: MV7005T1* CASE 318E-04, STYLE 2 TO-261AA MAXIMUM RATINGS Symbol Value Unit Reverse Voltage Rating Vr 15 Volts Forward Current if 50 mA Pd 280 28 mW/cC Total Power Dissipation @ T /\ = 25: C Derate above 25-C Junction Temperature Storage Temperature Range Tj

t6661

Abstract: ft960 marking 6Z SOT23 702 sot23 sot 23 70.2 sot-23 mosfet Marking SA s 6z sot223 marking marking 6Z 25 marking 6z sot
Contextual Info: SMALL-SIGNAL TMOS MOSFETs continued CASE 318-07 (TO-236AB) SOT-23 STYLE 22 CASE 318E-04 (TO-261AA) SOT-223 STYLE 6 Table 18 — Surface Mount TMOS MOSFETs The follow ing is a listing of sm all-sig na l surface m ount T M O S MO SFETs. Case 318-07 — TO-236AB (SOT-23) — N-Channel

CSS-319E

Abstract: 91mm CSS-318E 319e 0204A
Contextual Info: CHINA SEMICONDUCTOR CORPORATION Feature § § § § 0.36 inch 9.1mm Digit height. Case mold type Excellent character appearance Wide viewing angle Mechanical Dimension Typical Internal Equivalent Circuit SINGLE DIGIT DISPLY CSS-318E/319E Model no. § CSS-318E/319E Orange (GaAsP/ GaP)

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT–223 TO–261 CASE 318E–04 ISSUE K DATE 01/02/2000 SCALE 1:1 A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S INCHES DIM MIN MAX A 0.249 0.263 B 0.130

SPZT3904T1G

Abstract: transistor marking 1am
Contextual Info: PZT3904T1G, SPZT3904T1G General Purpose Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−223 CASE 318E

turn encoder

Abstract: qei encoder language c example 318EC ti gp 1292 smd marking code pJ 1059
Contextual Info: TE X AS INS TRUM E NTS - ADVANCE INFO R MAT ION Stellaris LM4F232H5QC Microcontroller D ATA SHE E T D S -LM4F 232H5 Q C- 1 4 0 0 7 . 2 6 0 1 S P M S 318E C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2013 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

tic 223

Abstract: liA SOT23 7S1B-03
Contextual Info: CASE 29-04 T0 -2 2 6 AA TO-92 1 3 2 CASE 318E-04 (TO-261AA) SOT-223 CASE 318-07 (TO-236AB) SOT-23 14 CASE 646-06 (TO-116) Plastic-Encapsulated Transistors CASE 7S1B-03 SO-16 M o to ro la 's p la s tic tra n s is to rs and d io d e s e n co m p a ss huncreds of devices spanning the gamut from general-purpose

Contextual Info: PZTA64T1* CASE 318E-04, STYLE 1 TO-261AA M AXIMUM RATINGS Rating Symbol Value C o lle c to r - E m itte r V o lta g e VCES - 30 Vdc C o lle c to r - B a s e V o lta g e VCBO -3 0 Vdc ve b o - 10 Vdc 1.5 W a tts - 500 m Adc E m itte r - B a s e V o lta g e

Contextual Info: PZTA96T1* CASE 318E-04, STYLE 1 TO-261AA M A XIM U M RATINGS Rating Symbol Value Unit v CEO - 450 Vdc Collector-Base Voltage v CBO - 450 Vdc Emitter-Base Voltage Ve b o -5 .0 Vdc 'C -5 0 0 mAdc Collector-Emitter Voltage Collector Current Total Power Dissipation up to T /\ = 25 C*