3150Q Search Results
3150Q Price and Stock
Wima SMDTC03150QA00KP00Capacitor: polyester; 150nF; 40VAC; 63VDC; ±10%; MKT; SMD; 2220 |
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SMDTC03150QA00KP00 | 1,000 |
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SMDTC03150QA00KP00 |
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SMDTC03150QA00KP00 | 500 | 1 |
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KEMET Corporation PEG123MB3150QT1150 - 30%V - Tape and Reel (Alt: PEG123MB3150QT1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PEG123MB3150QT1 | Tape & Reel | 2,000 |
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PEG123MB3150QT1 | Tape & Reel | 2,000 |
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KEMET Corporation PEH169VB3150QU2CAP 150UF 400VDC -10% TO 30% 35 X 60MM SCRW TERM CAN 0.5 OHM - Boxed Product (Development Kits) (Alt: PEH169VB3150QU2) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PEH169VB3150QU2 | Box | 200 |
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PEH169VB3150QU2 | 90 |
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PEH169VB3150QU2 | Bulk | 50 |
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KEMET Corporation PEH169UA3150QU2150.PF 350V - Boxed Product (Development Kits) (Alt: PEH169UA3150QU2) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PEH169UA3150QU2 | Box | 29 Weeks | 200 |
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PEH169UA3150QU2 | Bulk | 50 |
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KEMET Corporation PEG124GB3150QT1Aluminum Electrolytic Capacitor, 150 uF, 16 V, -10%, +30%, 2000 hours @ 125?C, Axial Leaded - Tape and Reel (Alt: PEG124GB3150QT1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PEG124GB3150QT1 | Tape & Reel | 28 Weeks | 2,000 |
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PEG124GB3150QT1 | Tape & Reel | 2,000 |
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PEG124GB3150QT1 | 25 Weeks | 1,000 |
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3150Q Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: \dt LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT) ADVANCE INFORMATION IDT71T024 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71T024 is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. It is fabricated using ID Ts highreliability CMOS technology. This state-of-the-art technology, |
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128kxidt71t024576-bit71t024 | |
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Contextual Info: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71V024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology, |
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128kxidt71v024lt71v024l576-bit+1 | |
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Contextual Info: m PRELIMINARY GM76FV8128,GM76FU8128,GM76FS8128,GM76FR8128 LG Semicon Co.,Ltd. 131,072 w o r d s x 8 b i t CMOS STATIC RAM Description Pin Configuration The GM76FV8128 / GM76FU8128 / GM76FS8128 / GM76FS8128 is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a |
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gm76fv8128gm76fu8128gm76fs8128gm76fr8128+2 | |
automatic transfer switch circuit diagram
Abstract: sanyo optical pickup unit LA7266 EN3357 sanyo OPTICAL PICK-UP auto iris driver DC auto iris LC9907 dc iris driver block diagram of iris based security system
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en3357lc9907automatic transfer switch circuit diagramsanyo optical pickup unit+6 | |
1S08SContextual Info: KM68FV1000, KM68FS1000, KM68FR1Q00 Family CMOS SRAM 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4nm Full CMOS • Organization : 128Kx8 bit > Power Supply Voltage KM 68FV1000 Fam ily. 3.0V - 3.6V |
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km68fv1000km68fs1000km68fr1q00128kx8+7 | |
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Contextual Info: P re lim in a ry K M 6 8 F S 2 0 0 0 Z , K M 6 8 F R 2 0 0 0 Z Fami l y C M O S SR A M D o c u m e n t Title 2 56 Kx 8 SUper Low Powe r and Low Voltage Full C M O S SRAM Data Sheets for 48-CSP R evision H isto ry RevNo. H Istorv D r a f t D a ta R em a r k |
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48-csp | |
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Contextual Info: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71V024L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology, |
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128kxidt71v024lt71v024l576-bit+1 | |
3150Q
Abstract: KM68FS1000
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km68fv1000km68fs1000km68fr1000100ns+3 | |
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Contextual Info: LOW POWER 2V CMOS SRAM 1 MEG 64Kx 16-BIT ADVANCE INFORMATION IDT71T016 FEATURES: DESCRIPTION: • 64K x 16 Organization • Wide Operating Voltage Range: 1.8 to 2.7V • Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options • Speed Grades: 150ns, 200ns |
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16-bitidt71t016150ns200ns+3 | |
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Contextual Info: P re lim in a ry K M 6 8 F S 1 OOOZ, K M 6 8 F R 1 0 0 0 Z F a m i l y CMOS SRAM Documerat Title 12 8K x8 Super Low Powe r and Low Voltage Full C M O S SRAM Data Sheets for 48-CSP Revision History R e v . N o. H Istorv Draft Data R em ark Rev. 0.0 -1 's t edition |
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48-csp18rth | |
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Contextual Info: KM68FV1000, KM68FS1000, KM68FR1000 Family CMOS SRAM Document Title 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial draft March 15,1996 Advance 0.1 Revise - Erase 100ns from KM68FS1000 Family |
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km68fv1000km68fs1000km68fr1000100ns+2 | |
3771 8 pin ic
Abstract: 3771 ic 8 pin 8 pin ic 3771 3771 1A7A1 3771- IC
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16-bitidt71v016l100ns44-pin+9 | |
SANYO sh2a027-1
Abstract: 3116-SIP12S ic 4040 MPP36S SIP14H 3047a 3151-QIP100E 3149-DIP48S 3037A-DIP20H 3029A-DIP28S
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004a-dip14tk010a-dip22005a-dip14t011a-dip24+16 | |
land pattern for TSOP 2 44 PINContextual Info: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71V024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology, |
OCR Scan |
128kxidt71v024l100ns32-pin+4 | |
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woy transistorContextual Info: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71T024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology, |
OCR Scan |
128kxidt71t024l150ns200ns+4 | |
KM616FS2000TI-12Contextual Info: KM616FV2000, KM616FS2000, KM616FR2000 Family CMOS SRAM 128Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology: Q.4nm Full CMOS • Organization: 128Kx16 • Power Supply Voltage KM616FV2000 Family : 3.0V - 3,6V |
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km616fv2000km616fs2000km616fr2000128kx16+3 | |