314 TRANSISTOR Search Results

TRANSISTOR K 314

Abstract: foto transistor Q62702-P1668 Q62702-P1675
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 314 SFH 314 FA SFH 314 SFH 314 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm SFH 314 und bei 880 nm (SFH 314 FA) • Hohe Linearität

Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 314 SFH 314 FA SFH 314 SFH 314 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm SFH 314 und bei 880 nm (SFH 314 FA) • Hohe Linearität • 5 mm-Plastikbauform

TRANSISTOR K 314

Abstract: SFH 314 SFH314FA
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 314 SFH 314 FA SFH 314 SFH 314 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm (SFH 314) und bei 880 nm (SFH 314 FA)

TRANSISTOR K 314

Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 314 SFH 314 FA SFH 314 SFH 314 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm (SFH 314) und bei 880 nm (SFH 314 FA)

Contextual Info: 2007-04-03 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.0 SFH 314, SFH 314 FA SFH 314 SFH 314 FA Features: Besondere Merkmale: • Spectral range of sensitivity: 460 nm.1080 nm SFH 314 , 740 nm. 1080 nm (SFH 314 FA) • Package: 5mm Radial (T 1 ¾), Epoxy

Contextual Info: 2014-01-14 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.1 SFH 314, SFH 314 FA SFH 314 SFH 314 FA Features: Besondere Merkmale: • Spectral range of sensitivity: 460 nm.1080 nm SFH 314 , 740 nm. 1080 nm (SFH 314 FA) • Package: 5mm Radial (T 1 ¾), Epoxy

SFH 314

Abstract: Q62702-P1668 Q62702-P1675 Q62702-P1755 Q62702-P1756 Q62702-P1757 Q62702-P1758 TRANSISTOR K 314
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 314 SFH 314 FA SFH 314 SFH 314 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm SFH 314 und bei 880 nm (SFH 314 FA) • Hohe Linearität • 5 mm-Plastikbauform

TRANSISTOR K 314

Abstract: GEX06630 Q62702-P1668 Q62702-P1675 Q62702-P1755 Q62702-P1756 Q62702-P1757 Q62702-P1758
Contextual Info: SFH 314 SFH 314 FA NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 314 SFH 314 FA feo06652 .Neu: Area not flat 1.8 1.2 5.9 5.5 4.0 3.4 0.6 0.4 Chip position GEX06630 feof6652 29.5 27.5 Cathode Diode Collector (Transistor) 6.9 6.1 5.7 5.5

TRANSISTOR K 314

Abstract: foto transistor SFH 314 phototransistor 500-600 nm GEX06630 Q62702-P1668 Q62702-P1675 Q62702-P1755 Q62702-P1756 Q62702-P1757
Contextual Info: SFH 314 SFH 314 FA NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor Area not flat 6.9 6.1 5.7 5.5 5.9 5.5 1.8 1.2 29.5 27.5 Cathode Diode Collector (Transistor) ø5.1 ø4.8 0.8 0.4 2.54 mm spacing 0.6 0.4 SFH 314 SFH 314 FA feo06652 .Neu: 4.0

2SD1897

Abstract: 2SD1757K
Contextual Info: Transistors 2SD1897 2SD1757K 96-768-D91 (94S-314-D95) 317

2SD2576

Abstract: 2SD2394 D310 2SD2167 D348 transistor D348
Contextual Info: Transistors 2SD2167 2SD2394 / 2SD2576 92S-358–D310 (94L-1098-D348) 314

Contextual Info: SIEMENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 314 SFH 314 FA Area not flat 5.9 5.5 JX6 0.4 GEX06630 Collector Transistor Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. Wesentliche Merkmale

MARK 8E diode

Abstract: SOT89 MARKING 8E KIA78L09F 8E sot-89 mark 8E 8e sot89 sot89 8e sot-89 SOT-89 marking 8e marking 4 SOT89
Contextual Info: SEMICONDUCTOR KIA78L09F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking No. 8 E 1 314 2. Marking 2 Item Marking Description Device Mark 8E KIA78L09F * Grade - - Lot No. 314 3 Year 0~9 : 2000~2009 14 Week 14 : 14th Week Note * Grade : Transistor only.

KIA78L*F

Abstract: 8J marking marking 8j sot-89 marking 8J KIA78L18F sot-89 MARKING SPECIFICATION SOT-89 marking 314
Contextual Info: SEMICONDUCTOR KIA78L18F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking No. 8 J 1 314 2. Marking 2 Item Marking Description Device Mark 8J KIA78L18F * Grade - - Lot No. 314 3 Year 0~9 : 2000~2009 14 Week 14 : 14th Week Note * Grade : Transistor only.

KIA78L*F

Abstract: marking 314 marking 8G KIA78L12F sot-89 MARKING SPECIFICATION SOT-89 8g sot 314 transistor SOT-89 8G
Contextual Info: SEMICONDUCTOR KIA78L12F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking No. 8 G 1 314 2. Marking 2 Item Marking Description Device Mark 8G KIA78L12F * Grade - - Lot No. 314 3 Year 0~9 : 2000~2009 14 Week 14 : 14th Week Note * Grade : Transistor only.

MARK 8F

Abstract: KIA78L*F KIA78L10F 8f diode sot-89 marking sot-89 marking 314 SOT89 transistor marking kia78l
Contextual Info: SEMICONDUCTOR KIA78L10F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking No. 8 F 1 314 2. Marking 2 Item Marking Description Device Mark 8F KIA78L10F * Grade - - Lot No. 314 3 Year 0~9 : 2000~2009 14 Week 14 : 14th Week Note * Grade : Transistor only.

KIA78L*F

Abstract: marking 314 SOT-89 8i KIA78L15F sot-89 MARKING SPECIFICATION SOT-89
Contextual Info: SEMICONDUCTOR KIA78L15F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking No. 8 I 1 314 2. Marking 2 Item Marking Description Device Mark 8I KIA78L15F * Grade - - Lot No. 314 3 Year 0~9 : 2000~2009 14 Week 14 : 14th Week Note * Grade : Transistor only.

NE68018

Abstract: 814T
Contextual Info: Medium Power Bipolar Transistors Pide MAQ fr I TEST Hfe Fax on dBM TYP (dBM) NE46100 2.0 12.5 100 19 27 10 100 9.8 5.5 100 250 Chip 00 D 314 NE46134 1.0 12.5 100 20.5 27.5 10 50 9 5.5 100 250 SOT-89 34 D 314 NE85634 1.0 10 40 13 22 10 40 11 6.5 120 100 SOT-89

a 314j

Abstract: ST7MDT20M-EPB ADC software program st72521 cpu 314 AN1131 ST72 ST7MDT20-DVP2
Contextual Info: AN1131 APPLICATION NOTE MIGRATING APPLICATIONS FROM ST72511/311/314/124 TO ST72521/321/324 by Microcontroller Division Applications 1 INTRODUCTION This application note provides information on migrating ST72511/311R, 314N, 314/124J applications to the ST72521/321R, 321/324J family. The ST72521/321R, 321/324J family is designed and manufactured in a more recent technology.

cpu 314

Abstract: A 314J ADC software program st72521 ic 311 pdf datasheets AN1131 ST72 324J 124j
Contextual Info: AN1131 APPLICATION NOTE MIGRATING APPLICATIONS FROM ST72511/311/314/124 TO ST72521/321/324 by Microcontroller Division Applications 1 INTRODUCTION This application note provides information on migrating ST72511/311R, 314N, 314/124J applications to the ST72521/321R, 321/324J family. The ST72521/321R, 321/324J family is designed and manufactured in a more recent technology.

ctx128

Abstract: IC 8021-2 CTX128 diode SE271 CSA 20.00MX ZTT-4.00MG ZTB455E CSX750PCC ECS-327SMO ECS-10-13-1H
Contextual Info: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 14-176 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 177-313 INCLUDES SMT INCLUDES SMT A B S C 6E 3. I Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 314-333

BF314

Abstract: tfk 248 TFK 29 16go TFK 4 314 TFK 450 ic251 TFK 175 TRANSISTOR K 314 BF 251
Contextual Info: BF 314 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Feafures: • Kleine R ückwirkungskapazität

Contextual Info: TO SHIBA 2SD1314 2S D1 314 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 20.5MAX. • • ^3.3 ±0.2 High DC Current Gain : —100 (Min.) Low Saturation Voltage : Vqe (sat)~^V (Max.)

TRANSISTOR K 314

Abstract: telefunken ta 350 bf314
Contextual Info: < TELEFUNKEN ELECTRONIC Ô1C D • ñRSDDTb D Q D S n b 2 ■ ALÛÛ T ; - 3 1 - / 7 mitPdjJIMtiM electronic B F 314 ; Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Application« Video Input stages in common base configuration Features: