313 J Search Results

Q62702-P1667

Abstract: Q62702-P1674 Q62702-P1751 Q62702-P1752 Q62702-P1754
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 313 SFH 313 FA SFH 313 SFH 313 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm SFH 313 und bei 880 nm (SFH 313 FA) • Hohe Linearität • 5 mm-Plastikbauform

transistor 313

Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 313 SFH 313 FA SFH 313 SFH 313 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm (SFH 313) und bei 880 nm (SFH 313 FA)

foto transistor

Abstract: Q62702-P1667 Q62702-P1674 Q62702P3598
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 313 SFH 313 FA SFH 313 SFH 313 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm SFH 313 und bei 880 nm (SFH 313 FA) • Hohe Linearität

Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 313 SFH 313 FA SFH 313 SFH 313 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm SFH 313 und bei 880 nm (SFH 313 FA) • Hohe Linearität • 5 mm-Plastikbauform

transistor 313

Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 313 SFH 313 FA SFH 313 SFH 313 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm (SFH 313) und bei 880 nm (SFH 313 FA)

Contextual Info: Alio Rechle vorbehallen/ 411 rights reserred u 09 66 313 3601 M 3 3 M 3 2 M 3 3 D e lo il. 313 6601 09 66 313 7601 09 66 313 3602 4-40 UNC 1 31892 05/05/04 JH 09 66 313 6602 4-40 UNC 2 29773 1 8 -A P R -0 2 cv 09 66 313 4-40 UNC 3 27960 0 1 /d e c /0 0 ALSPACE

Q62702-P1667

Abstract: Q62702-P1674 Q62702-P1751 Q62702-P1752 Q62702-P1753 Q62702-P1754
Contextual Info: SFH 313 SFH 313 FA NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 313 SFH 313 FA fexf6626 fex06626 .Neu: Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im

BC211

Abstract: BC313 BC 313 bc 374 BC313A NPN pnp MATCHED PAIRS h21e IT 313 TR BC transistor DA 313
Contextual Info: *B C 313 BC 313 A PNP SILICON TRANSISTORS, PLANAR TRANSISTORS PNP S ILIC IU M , P LAN A R îfc Preferred device Dispositif recommandé The BC 313 and BC 313 A are intended for a wide variety of medium power medium speed switching and AF amplifier application ; they

foto transistor

Abstract: OHF02331 p1752 phototransistor 500-600 nm GEX06260 Q62702-P1667 Q62702-P1674 Q62702-P1751 Q62702-P1752 Q62702-P1753
Contextual Info: SFH 313 SFH 313 FA NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 313 SFH 313 FA fex06626 .Neu: Area not flat 1.8 1.2 29 27 Cathode Diode Collector (Transistor) 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 0.8 0.4 2.54 mm spacing 0.6 0.4 0.6 0.4

0 702 010

Abstract: nino ir 749
Contextual Info: i D R AW IN G R E V I S I O N S 10° TYP I ' ï & E A 1.209 1 . 536 2.079 2.724 SIZE 9 15 25 37 B .984 .312 1.852 2.500 C .642 .970 1.510 2.158 D .500 .500 .500 .500 E .313 .313 .313 .313 F .592 .918 1.462 2.1(4 G .749 .749 .749 .749 H .3(4 .314 .314 .314

ericsson antenna air 32

Abstract: ericsson antenna air 21 2480/ericsson antenna air 32 CMS 2015 PBA 313 01/2S Ericsson Microelectronics bluetooth transmitter circuit diagram Ericsson antennas ltcc Synton ericsson antenna
Contextual Info: PBA 313 01 Bluetooth Radio PBA 313 01/2 Bluetooth 1.0b , PBA 313 01/3 (Bluetooth 1.1) Key Features • RF output power Class 2 • Compliant to Bluetooth specification 1.0b or 1.1 • Forms a complete radio with: - an antenna - a crystal or existing 13 MHz

ericsson antenna air 21

Abstract: ericsson antenna air 32 ericsson air 21 antenna 2480/ericsson antenna air 32 Ericsson Radio Module
Contextual Info: PBA 313 01 Bluetooth Radio PBA 313 01/2 Bluetooth 1.0b , PBA 313 01/3 (Bluetooth 1.1) Key Features • RF output power Class 2 • Compliant to Bluetooth specification 1.0b or 1.1 • Forms a complete radio with: - an antenna - a crystal or existing 13 MHz

Contextual Info: •Plug Receptacles 10 oJ WIW1IW1 IWIW1W1 y co_ 1 in i LO o 35.8 6 5 4 ,3 2 1 | | fcTI |" 7 ] [T l'j'fT ] ["o"| p T | | J | n z m 37.8 CO HRS No. Product No. 313-1003-5 M RF03-6PR-SM T ■Receptacles HRS No. Product No. 313-1002-2 M RF03-6R-SM T 313-1007-6

Contextual Info: PBA 313 01 Preliminary Bluetooth radio PBA 313 01/2 Bluetooth 1.0B , PBA 313 01/3 (Bluetooth 1.1) Key Features • RF output power Class 2 • Compliant to Bluetooth Specification 1.0B or 1.1 • Forms a complete radio with only - an antenna - a crystal or existing 13 MHz reference

transformer 3000 kVA

Abstract: VIP96 20 kva transformer Single phase power factor correction 1000 kVA transformer
Contextual Info: Issued March 1997 232-5036 Data Pack F Data Sheet Power monitoring DPMs VIP96 RS stock no. 313-249 VIPD RS stock no. 313-255 VIPD-3 RS stock no. 313-261 These units provide high accuracy, true rms multifunction analysis of electricity usage in a single compact panel mounting or DIN rail mounting

PCM 2905

Abstract: bluetooth positioning system block diagram LTCC Substrate ROK101002
Contextual Info: Preliminary July 1999 PBA 313 01/2 Bluetooth Radio Description Key Features PBA 313 01/2 is a short-range microwave frequency radio transceiver for Bluetooth communication links that are designed to operate in the globally available ISM frequency band, 2.4–2.5 GHz.

Contextual Info: Alio Rechle vorbehallen/ 411 rights reserred u 3 Nook Dol. D e lo il. 0 1 /d e c /0 0 ALSPACE A ll Oioi. in rim O rig. Size DIN A Insp. 09 66 313 3603 4-40 UNC 1 31892 05/05/04 JH 09 66 313 6603 4-40 UNC 2 29773 1 8 -A P R -0 2 cv 09 66 313 7603 4-40 UNC

Contextual Info: Alio Rechle vorbehallen/ 411 rights reserred 3 k 5 2 1 D C B D ol. D e lo il. 31892 05/05/04 JH 09 66 313 3600 3.1 * 0.1 1 09 66 313 6600 3.1 ± 0.1 2 29773 1 8 -A P R -0 2 cv 09 66 313 3.1 ± 0.1 3 27960 0 1 /d e c /0 0 ALSPACE Mod. O ol. Nome Pari 7600 n u mb e r

Contextual Info: 6/23/2014 Serie 313 - 5.08mm Close Horizontal PCB Header WR-TBL - Product Catalog Electromechanical Components Back to product families Serie 313 - 5.08mm Close Horizontal PCB Header WR-TBL Picture Downloads Characteristics Crosslinks MATERIAL MECHANICAL Colour

full bridge with IRFP450 schematic

Abstract: irfp450 mosfet full bridge 600 watt smps schematic switching with IRFP450 schematic sic diode 4h sic "silicon carbide" FET 500 WATT smps ixys dsei DSEI 12 06A
Contextual Info: 600 V, 1- 40 A, Schottky Diodes in SiC and Their Applications Anant Agarwal, Ranbir Singh, Sei-Hyung Ryu, James Richmond, Craig Capell, Scott Schwab, Brice Moore and John Palmour Cree, Inc, 4600 Silicon Dr., Durham, NC 27703, Anant_Agarwal@cree.com Ph. 919 313-5539, Fax: (919) 313-5696

CO-6FPFA-SB-CX75

Contextual Info: HPIugs •Complete locking type HRS No. Product No. 313-1006-3 MRF03-6P-0.8D 50Q :CO-6F-DSB-CX-50 A12B0733-01 750 : CO-6FPFA-SB-CX75 1X0.12 Manufactured by Junkosha Co., Ltd. Manufactured by Hitachi Cable, Ltd. 313-1001-0 MRF03-6P-1.27 750 : UL20537 PF75VCAS

full bridge with IRFP450 schematic

Abstract: CPWR-AN02 smps fan speed control 4h sic irfp450 mosfet full bridge HFA08TB60 IRFP450 full bridge 100C IRFP450 Cree SiC MOSFET
Contextual Info: 600 V, 1- 40 A, Schottky Diodes in SiC and Their Applications Anant Agarwal, Ranbir Singh, Sei-Hyung Ryu, James Richmond, Craig Capell, Scott Schwab, Brice Moore and John Palmour Cree, Inc, 4600 Silicon Dr., Durham, NC 27703, Anant_Agarwal@cree.com Ph. 919 313-5539, Fax: (919) 313-5696

Contextual Info: SIEM ENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 313 SFH 313 FA Area not flat Collector Transistor Approx, weight 0.5 g MaBe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale

lc proximity detector ic

Abstract: lc oscillator AM313
Contextual Info: IC FOR PROXIMITY DETECTOR AM 313 GENERAL DESCRIPTION The AM 313 is a bipolar monolithic Integrated Circuit designed for proximity detection applications. The function is based on the damping of an LC oscillator which switches a transistor and LED output. FEATURES