30UH Search Results

Contextual Info: 1. M echanical D im ensions: 2 . S c h e m a tic : o- B 0 .7 0 8 Max o- 3. E le c tric a l S p e c ific a tio n s: @25°C OCL: 5 0 u H ± 1 5% @ 10KHz, 0.1V OAdc OCL: 30uH Typical @ 10KHz, 0.1V 12Adc DC Res.: 0 .0 2 0 O hm s Max Lead D ia m e te r: Notes:

Contextual Info: 1. D im e n s io n s : 2 . S c h e m a tic : 1 CT:2CT ^ n. 1 o o 6 PRIMARY -o 5 SECONDARY -o 4 3. Electrical S p e c if ic a t i o n s : ISOLATION: @25°C 300VAC PRI TO SEC TURNS RATIO: ( 1 - 3 ) : ( 6 - 5 - 4 ) = 1:2CT OCL: P 1 - 3 0.100 30uH Typ @10DKHz 5 0 m V

Contextual Info: ELECTRICAL CHARACTERISTICS: Inductance: 10-7with 6-9 short3.00mH±10% @100kHz,50mV Leakage Inductance: 10-7 with 6-9 -42-5 short 30uH Max @100kHz,50mV DC Resistance: line side 10-6=9-7 1.5 Ohms Max chipe side 1-5 with 2-4 short 2.3 Ohms Max @25°C Turn Ratio: Chip:Line: 1CTS:1.8CTS @100KHz,50mV

Contextual Info: VZSW 9000»! 30UH3 WOD'INUJMMM ie o s z z x m asna d TiujMnjp smi 4« u o p j» pa|npdn aq tou 3G aW KSSH W Q ixapu fi^Sn ainjaf| ._ 1MDa* P •»W*n a n im a ì aro Guim djq ■aiou jo|jd ut pafpns UOflDU&SSQ UNIII suo^usuìqiv »l“ S ■ $ -E > VI 4*W

Contextual Info: 2 1. D im e n s io n s : Q <JD io - C M S ch em a tic: X D 6XF0256 < . DQ m C LO YYWW rO o 6 3. E lectrical OCL: 25uH x o OCL: 30uH Typ @ 100KHz, 0 .1 V e a c h Irm s: 5 .35A U o IP & f e . S pecifications: @25“C Min @ 100KHz, 0 .1 V (e a c h ) LL: Pins

52uH

Abstract: 52uH inductor
Contextual Info: 2. S c h e m a tic : 1. M e c h a n ic a l D im e n s i o n s : 1 o- 1 .3 3 2 9 .0 0 Nom B 1 5 . DO Max Max 2 1 A o O- 3. E l e c t r i c a l S p e c ific atio n s: In d u c ta n c e ; 52uH ±15% in In d u c ta n c e : 30uH Min 1 .0 K H z ,0 .1 V with <\i

Contextual Info: ELECTRICAL CHARACTERISTICS: Turns Ratio: 1:1±2% @100KHz,50mV Inductance: Pri 40uH Min @100KHz,50mV Inductance: at -40ºC 30uH Min @100KHz,50mV Leakage Inductance: 0.12uH Max @100KHz,50mV Interwinding Capacitance: 13pF Max @100KHz,50mV Primary Pins: 2-6

Contextual Info: ELECTRICAL CHARACTERISTICS: Turns Ratio: 1:1±2% @100KHz,50mV Inductance: Pri 45uH Min @100KHz,50mV Inductance: at -40ºC 30uH Min @100KHz,50mV Leakage Inductance: 0.12uH Max @100KHz,50mV Interwinding Capacitance: 13pF Max @100KHz,50mV Primary Pins: 2-6

Contextual Info: SIGN PART NUMBER: X USB-M2XFXX DATE TR - tape/reel w/pich up pad TU - tube TO - tape/reel w/out pad _ DESCRIPTION APPROVER THIS IS CAD DRA WING, DO NOT REVISE MANUALL Ylll M aterial • • • • • Plating: 6 - selective flash gold 8 - selective 30uH gold

xfatm8q14

Abstract: XFATM8Q4 xfmrs
Contextual Info: XFMRS 25 1 10/100BASE-T QUAD PORT MODULE • • • MEETS OPEN CIRCUIT INDUCTANCE OCL SPECIFICATIONS OF 350uH MIN WITH 8mA DC BIAS FROM 0-70oC CMR CHOKE COIL OCL IS 30uH MIN CUSTOM DESIGNS AVAILABLE FOR MOST APPLICATIONS Electrical Specifications: Part

Contextual Info: 1. M e c h a n ic a l D im e n s i o n s : 2 . S c h e m a t ic : o- 1.33 Max . oCiJ X X ~n ~n < T\ -f»Ln cr> I -S < s § 3. E l e c t r i c a l S p e c ific atio n s: Inductance: 45uH ± 10% ZOKHz, 1.0V Inductance: 30uH Typ @ Z0KHz, 1.0V, 10Adc Current Rating: 10ADC

Contextual Info: ELECTRICAL CHARACTERISTICS: Turns Ratio: 1CT:.2.5CS±2% @100KHz,0.5V Inductance: Pri 22mH Min @100KHz,0.5V Leakage Inductance: Sec 30uH Max Interwinding Capacitance:100pF Max @100KHz,0.5V CD: Pri 150pF Max DC Resistance: Pri 2.5 Ohms±25% Sec 5.8 Ohms±25% @25°C

DV 3287 C

Abstract: 53B26 DV 3287 b
Contextual Info: Y@ ! 8HPT 9h‡hÃTurr‡ Cvdd 100nF Vdd TEST wupen SUPTEST VDDA Level Peak Detector Sine Filter @2 fc 270pF LowPass Filter @ fc I Limiter 150k 68mH INB 47nF Vdd VREF Demodulator Preampl +i clk Anti-Alias Filter Current Ref. 30uH DATA LowPass Filter @ fc Q

XF0709A-AD39S

Contextual Info: 1. Mechanical Dimensions: 2 . S ch em atic: Line Chip 1 O -0 8 30- -o 5 2 0 4o- 3. E lectrica l S p ecifica tio n s: @25°C SHED □ □ □ □ □ □ □ □ I— 5 .7 7 — I _L OCL: Pins 1 - 4 3mH±6% @10KHz 0.1V, Tie Pins 2 - 3 1 Cww: H r Pins 1 - 4 30uH Max @100KHz 0.1V, Tie Pins 2 -3 , Short Chip

SMARTDAA

Contextual Info: LAN0069-50 SMART-DAA Transformer z z z z Approved by Conexant for their SMART-DAA solution RoHS Compliant Surface Mountable package Operating Temperature 0°C~70°C Electrical Specifications @25℃ OCL: 30uH Min. Turn Ratio: @10KHz/10mVrms Pri:Sec=1:2±1%

Contextual Info: mil ELECTRICAL CHARACTERISTICS: Turns Ratio: Pri:Sec=1:2±2% @100KHz,50mV Inductance: pri: 30mH min @100KHz,50mV SEC Leakage lnductance:30uH Max @100KHz,50mV DC Resistance: Pri: 3.0 ohm max @25°C Sec: 5.0 ohm max @25°C Interwinding Capacitance: 120pF Max @100KHz,50mV

S5012

Contextual Info: ISDN S-INTERFACE TRANSFORMER P/N: S5012 DATA SHEET A. CHARACTERISTIC DATA: 1. F= 96KHz, CWI+II 200pF 2. RI= RII 0.55Ω, RIII=RIV 1.6Ω 3. RV~VIII= 1.1Ω 4. ∆Idc= 5mA, TU AMB 60°C B. ELECTRICAL SPECIFICATIONS @ 25°C 1. LI+II 30uH (NI+II SERIES) AT 10KHz 100mVrms(core 1, 2)

1S5T

Abstract: T151D
Contextual Info: 2. Schem atic: 1. M e c h a n ic a l D im e n s i o n s : 1 o- 7R HO Z O- Mhy 3. E l e c t r i c a l Sp ecifications: Inductance: 5 1 .3 5 u H ± 1 0 % @1 OOKHz,0.25V Inductance: 30uH Min @1.0KHz,0.1V with 5.0Adc DC Resistance: 0.022 Ohm s Max D 10.0 ± 3 .0

208H

Contextual Info: 1. M e c h a n ic a l "1 9 .4 0 D im e n s io n s : 2. S c h e m a tic : 1 o- -o 2 o- -o 3 4 Max X x D 3 ~ -~ ! r XFMRS x f 0306 CO -C M C 1 B, D IN □ dE o □ to CN Top view 3. E le c tric a l S p e c ific a tio n s : OCL: 30uH N om @ 100KHz 0.1V Each Wdq

LAN0066-50

Abstract: LAN0066 SMARTDAA
Contextual Info: LAN0066-50 SMART-DAA Transformer Approved by Conexant for their SMART-DAA solution Surface Mountable package Operating Temperature 0°C to 70°C Electrical Specification @25℃ OCL: Pri:30uH Min. Turn Ratio: Pri:Sec=1:1.666±1% Hi-POT : 2000 Vrms D.C.R: Pri: 0.225 ohm Max.

80306

Abstract: KMP8 TO 220H
Contextual Info: 803 Series www.murata-ps.com Horizontal Mount Toroidal Inductors SELECTION GUIDE Inductance DC Current DC Resistance ±10% H Max. A Max. Ω 75 150 75 150 30 220 1.0 1.0 1.0 3.5 2.0 3.0 0.10 0.14 0.064 0.09 0.60 0.10 Order Code 80301C 80302C 80303C 80304C

APT54GA60B

Abstract: APT54GA60BD30 APT54GA60SD30 MIC4452 SD30
Contextual Info: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise

APT10035LLL

Abstract: APT100GT120JRDL
Contextual Info: 1200V APT100GT120JRDL G *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.

APT28GA60BD15

Abstract: APT6017LLL MIC4452
Contextual Info: APT28GA60BD15 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low