30SEP2003 Search Results

ATH12K12-9

Contextual Info: ATH12K12 Series —12-V Input 12-A, 12-V Input Non-Isolated Wide-Output Adjust Power Module REVISION 00 30SEP2003 Features NOMINAL SIZE = • Up to 12-A Output Current • 12-V Input Voltage • Wide-Output Voltage Adjust (1.2 V to 5.5 V) • Efficiencies up to 94 %

DC OVERCURRENT PROTECTION CIRCUIT

Abstract: 18-A ATH18K12-9 ATH18K12-9S PTH12020W TR-332
Contextual Info: ATH18K12 Series —12-V Input 18-A, 12-V Input Non-Isolated Wide-Output Adjust Power Module REVISION 00 30SEP2003 Features NOMINAL SIZE = 1.5 in x 0.87 in (38,1 mm x 22,1 mm) Description The ATH18K12 series of non-isolated power modules offers OEM designers a

3348DC

Contextual Info: M29W400DT M29W400DB 4 Mbit 512 Kb x 8 or 256 Kb x 16, boot block 3 V supply Flash memory Features „ Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read SO44 (M)(1) „ Access time: 45, 55, 70 ns „ Programming time – 10 s per byte/word typical

Contextual Info: 2 THIS DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L 20 LOC GP R 1G H T S R E S E RV E D. R EV 1S I O N S DIST 00 p LTR DESCRIPTION DATE DWN APVD A REV PER E C O - 0 0 6 5 2 5

J-STD-020B

Abstract: M29W400D M29W400DB M29W400DT TFBGA48
Contextual Info: M29W400DT M29W400DB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME

Contextual Info: Part Details for P/N: 3-179161-2 • Products | Catalog | Brands | Industries | Commerce | Supplier | Customer Service | About | Home Current Brand View Home Document Search Text Search Alternate Part Search Multiple Part Comparison View All Tyco Electronics Brands

Contextual Info: M29W400DT M29W400DB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 45, 55, 70ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

Contextual Info: Part Details for P/N: 259015-1 • Products | Catalog | Brands | Industries | Commerce | Supplier | Customer Service | About | Home Current Brand View Home Document Search Text Search Alternate Part Search View All Tyco Electronics Brands AMP Part Number Search

1N914

Abstract: A0-A21 M29F032D
Contextual Info: M29F032D 32 Mbit 4Mb x8, Uniform Block 5V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70 ns ■ PROGRAMMING TIME – 10µs per Byte typical

M29F032D

Abstract: A0-A21 JESD97
Contextual Info: M29F032D 32 Mbit 4Mb x8, Uniform Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70 ns ■ PROGRAMMING TIME – 10µs per Byte typical ■ 64 UNIFORM 64Kbyte MEMORY BLOCKS

Contextual Info: M29W400DT M29W400DB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 45, 55, 70ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

RTM 862

Abstract: wafer connector
Contextual Info: 2 THIS £l DRAWING IS UNPUBLISHED. C O P Y R I G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION RIGHTS LOC RESERVED. GP REV I S I O N S D I ST 00 LTR DE S C R B1 PTION DATE DWN REV PER E C O - 0 0 6 5 2 5 REV PER ECO023222 29MAR2ÜÜ6

Contextual Info: 2 THIS DRAWING IS UNPUBLISHED. BY C O P Y R I G HT 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 H T $ LOC GP RESERVED. REV ISIONS D I ST 00 LTR DE S C R 01 PROPOSED 02 ADDED TIN-PLATED 03 NOTES 04 ADDED PTION DATE DWN 23BEC20Ü3 LS l;

M29W400D

Abstract: JESD97 M29W400DB M29W400DT TFBGA48
Contextual Info: M29W400DT M29W400DB 4 Mbit 512 Kb x 8 or 256 Kb x 16, boot block 3 V supply Flash memory Features • Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read ■ Access time: 45, 55, 70 ns ■ Programming time – 10 µs per byte/word typical

M29W400

Abstract: JESD97 M29W400D M29W400DB M29W400DT TFBGA48 numonyx m29
Contextual Info: M29W400DT M29W400DB 4 Mbit 512 Kb x 8 or 256 Kb x 16, boot block 3 V supply Flash memory Features • Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read ■ Access time: 45, 55, 70 ns ■ Programming time – 10 µs per byte/word typical

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT - RELEASED FOR PUBLICATION 6 5 4 3 2 - LOC - ALL RIGHTS RESERVED. - 1 REVISIONS DIST - P LTR F DESCRIPTION DATE REV PER ECO 14-003443 DWN APVD CT 3-21-14 DH 15.34 4.9 HOUSING D D 1 HOUSING: LCP, UL94V0, COLOR: BLACK.

Contextual Info: M29W400DT M29W400DB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 45, 55, 70ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical