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IXYS Corporation IXFH30N50P MOSFETs 500V 30A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFH30N50P		2,894			1 $10.15 10 $6.01 100 $6.01 1000 $5.36 10000 $5.36	Buy Now
TTI	IXFH30N50P	Tube			300	1 - 10 - 100 - 1000 $5.10 10000 $5.10	Buy Now
Nisshinbo Micro Devices RP130N501A-TR-FE LDO Voltage Regulators Low Noise 150mA LDO Regulator
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	RP130N501A-TR-FE		2,858			1 $0.95 10 $0.57 100 $0.36 1000 $0.24 10000 $0.17	Buy Now
IXYS Corporation IXFH30N50Q3 MOSFETs Q3Class HiPerFET Pwr MOSFET 500V/30A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFH30N50Q3		560			1 $14.83 10 $9.08 100 $9.08 1000 $7.69 10000 $7.69	Buy Now
TTI	IXFH30N50Q3	Tube	30		30	1 - 10 - 100 $8.69 1000 $7.69 10000 $7.69	Buy Now
IXYS Corporation IXTH30N50L2 MOSFETs 30.0 Amps 500V 0.002 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTH30N50L2		266			1 $31.20 10 $22.68 100 $22.68 1000 $22.68 10000 $22.68	Buy Now
TTI	IXTH30N50L2	Tube			300	1 - 10 - 100 - 1000 $19.84 10000 $19.84	Buy Now
IXYS Corporation IXTT30N50L2 MOSFETs LINEAR L2 SERIES MOSFET 500V 30A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTT30N50L2		44			1 $18.65 10 $11.65 100 $11.65 1000 $10.32 10000 $10.32	Buy Now
TTI	IXTT30N50L2	Tube			300	1 - 10 - 100 - 1000 $10.33 10000 $10.33	Buy Now

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30N50 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TO-3P weight Abstract: ixys ixfh 30n50p QG SMD TRANS PLUS220SMD 123B16 Contextual Info: Advance Technical Information PolarHVTM Power HiPerFET MOSFET VDSS ID25 IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS on trr = 500 V = 30 A Ω = 200 mΩ < 200 ns TO-3P (IXFQ)	Original	30N50P 30N50PS PLUS220 TO-3P weight ixys ixfh 30n50p QG SMD TRANS PLUS220SMD 123B16	PDF
ixys ixfh 30n50p Contextual Info: Advance Technical Information PolarHVTM Power HiPerFET MOSFET VDSS ID25 IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS on trr = 500 V = 30 A Ω = 200 mΩ < 200 ns TO-3P (IXFQ)	Original	30N50P 30N50PS PLUS220 ixys ixfh 30n50p	PDF
IXFR32N50 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 500 V 29 A 500 V 30 A trr ≤ 250 ns RDS(on) 0.16 Ω 0.15 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 247TM IXFR32N50	PDF
IXFR32N50 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 RDS(on) 0.16 Ω 0.15 Ω 500 V 29 A 500 V 30 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 125OC IXFR32N50	PDF
Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 30N50P VDSS ID25 RDS on Electrically Isolated Back Surface = 500 V = 17 A ≤ 225 mΩ Ω N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings	Original	30N50P ISOPLUS220TM E153432 405B2	PDF
30n50 Contextual Info: Photoelectric sensors FZAM 30N5002 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 300 . 1500 mm alignment / soiled lens indicator	Original	30N5002 30n50	PDF
Contextual Info: Photoelectric sensors FZAM 30N5003 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 100 . 700 mm alignment / soiled lens indicator	Original	30N5003	PDF
Contextual Info: Photoelectric sensors FZAM 30N5003 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 100 . 700 mm alignment / soiled lens indicator	Original	30N5003	PDF
Contextual Info: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing	Original	30N5004	PDF
Contextual Info: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing	Original	30N5004	PDF
30N50 Abstract: IXFR32N50 Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 32N50 IXFR 30N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 500 V 30 A 500 V 29 A trr £ 250 ns RDS(on) 0.15 W 0.16 W Preliminary data Symbol Test Conditions	Original	ISOPLUS247TM 32N50 30N50 30N50 IXFR32N50	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C	Original	30N50 32N50 125OC	PDF
Contextual Info: PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement Mode Avalanche Rated RDS on = 500 V = 30 A ≤ 200 mΩ Ω TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR	Original	30N50P 30N50PS O-247 30N50P O-247 PLUS220	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS RDS on trr = 500 V = 30 A ≤ 200 mΩ Ω ≤ 200 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings	Original	30N50P 30N50PS O-247 30N50P O-247	PDF

Contextual Info: Photoelectric sensors FZAM 30N5003 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 100 . 700 mm alignment / soiled lens indicator	Original	30N5003	PDF
32N50 Abstract: 30n50 Contextual Info: H iPerFET Power M O SFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFH 30N50 IXFH 32N50 p V DSS ^D25 500 V 30 A 0.16 f i 500 V 32 A trr £ 250 ns 0.15 Û DS on Preliminary data Sym bol Test C onditions V DSS Tj = 2 5 °C to 1 5 0 °C	OCR Scan	30N50 32N50 32N50 5A/25 6A/25	PDF
Contextual Info: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing	Original	30N5004	PDF
Contextual Info: Photoelectric sensors FZAM 30N5002 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 300 . 1500 mm alignment / soiled lens indicator	Original	30N5002	PDF
fast IXFX Abstract: MD 202 TO-264-aa TO-268 transistor tl 187 IXFK 125OC 32N50Q Contextual Info: VDSS HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q ID25 RDS on 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	30N50Q 32N50Q 247TM O-264 125OC 728B1 fast IXFX MD 202 TO-264-aa TO-268 transistor tl 187 IXFK 125OC 32N50Q	PDF
30N50 Abstract: 32N50 32N50Q IXFR30N50 IXFR32N50 Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS Electrically Isolated Back Surface IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions	Original	ISOPLUS247TM 30N50Q 32N50Q 247TM 125OC 30N50 32N50 32N50Q IXFR30N50 IXFR32N50	PDF
Contextual Info: Photoelectric sensors FZAM 30N5001 Fiber optic sensors & cables dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 600 mm sensing distance Tw 110 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator	Original	30N5001	PDF
Contextual Info: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing	Original	30N5004	PDF
Contextual Info: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing	Original	30N5004	PDF
32n50 Abstract: 32n50k transistor ixfh application note 30N50 1910 0016 diode 125OC IXFH30N50 IXFH32N50 Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C	Original	30N50 32N50 125OC 32n50 32n50k transistor ixfh application note 30N50 1910 0016 diode 125OC IXFH30N50 IXFH32N50	PDF

30N50 Search Results

30N50 Price and Stock

IXYS Corporation IXFH30N50P

Nisshinbo Micro Devices RP130N501A-TR-FE

IXYS Corporation IXFH30N50Q3

IXYS Corporation IXTH30N50L2

IXYS Corporation IXTT30N50L2

30N50 Datasheets Context Search

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IXFR32N50

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