30JUL07 Search Results

Contextual Info: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . C O P Y R IG H T RELEASED BY ^ C O E L E C T R O N IC S C O R P O R A T IO N . FO R ALL P U B L IC A T IO N R IG H T S R E V IS IO N S 50 RESERVED. LTR D E S C R IP T IO N REL PER DATE DWN JR 30JUL07 ECR 0 7 —0 1 7 1 ¿

do-204al

Abstract: 1N5391 1N5399 JESD22-B102D J-STD-002B 1N5392 1N5393 1N5394 1N5396 1N5398
Contextual Info: 1N5391 thru 1N5399 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC

1n5062g

Abstract: DO-204AC JESD22-B102D J-STD-002B 1N5059GP 1N5062GP
Contextual Info: 1N5059GP thru 1N5062GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation

BYW27-100GP

Abstract: BYW27-200GP
Contextual Info: BYW27-100GP thru BYW27-800GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction ed* t n e Pat * Glass-plastic encapsulation technique is covered by

Contextual Info: CPV362M4UPbF Vishay High Power Products IGBT SIP Module Fast IGBT FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses RoHS • HEXFRED soft ultrafast diodes COMPLIANT • Optimized for high speed over 5 kHz

Contextual Info: CPV364M4FPbF Vishay High Power Products IGBT SIP Module Fast IGBT FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses RoHS • HEXFRED soft ultrafast diodes COMPLIANT • Optimized for medium speed 1 to 10 kHz

Contextual Info: CPV363M4KPbF Vishay High Power Products IGBT SIP Module Short Circuit Rated Ultrafast IGBT FEATURES • Short circuit rated ultrafast: Optimized for high speed over 5.0 kHz (see fig. 1 for current vs. frequency curve), and short circuit rated to 10 µs at 125 °C, VGE = 15 V

Si2337DS-T1-E3

Abstract: Si2337DS Si2337DS Rev. A
Contextual Info: New Product Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a rDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ) • TrenchFET Power MOSFET RoHS 7 COMPLIANT TO-236 (SOT-23) S G 1

BY251GP

Abstract: BY255GP JESD22-B102D J-STD-002B
Contextual Info: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation

gi756 diode

Abstract: GI752 GI750 GI751 GI758 JESD22-B102D J-STD-002B P600 GI756
Contextual Info: GI750 thru GI758 Vishay General Semiconductor High Current Axial Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 µA • High forward current capability • High forward surge capability • Solder dip 260 °C, 40 seconds

Si2351DS

Abstract: marking code vishay SILICONIX SI2351DST1E3
Contextual Info: Si2351DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES • TrenchFET Power MOSFET MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 3.0 0.205 at VGS = - 2.5 V - 2.2 Qg (Typ) • PWM Optimized • 100 % Rg tested 3.2 nC

GP08D

Abstract: GP08B DO-204AL GP08A GP08J JESD22-B102D J-STD-002B
Contextual Info: GP08A thru GP08J Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat *Glass Encapsulation

DO-204AC

Abstract: GPP20M GPP20A JESD22-B102D J-STD-002B
Contextual Info: New Product GPP20A thru GPP20M Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 µA • High forward surge capability

GP02-40

Abstract: 20E-3 DO-204AL GP02-20 JESD22-B102D J-STD-002B
Contextual Info: GP02-20 thru GP02-40 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifierr FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction ed* t n e Pat *Glass Encapsulation technique is covered by

1N5624GP

Abstract: 1N5627GP JESD22-B102D J-STD-002B 1n5626gp
Contextual Info: 1N5624GP thru 1N5627GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation

SI4940DY

Contextual Info: New Product Si4940DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (Ω) ID (A) 0.036 at VGS = 10 V 5.7 0.059 at VGS = 4.5 V 4.4 • TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT SO-8 D1 S1 1 8 D1

Contextual Info: New Product Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • PWM-Optimized TrenchFET Power MOSFET • 100 % Rg Tested • Avalanche Tested

SI4483EDY

Contextual Info: Si4483EDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 30 ID (A) 0.0085 at VGS = - 10 V - 14 0.014 at VGS = - 4.5 V - 11 • TrenchFET Power MOSFET • ESD Protection: 3000 V RoHS APPLICATIONS COMPLIANT • Notebook PC

Si6991DQ

Contextual Info: SPICE Device Model Si6991DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUP28N15-52

Contextual Info: SPICE Device Model SUP28N15-52 Vishay Siliconix N-Channel 150-V D-S 175° MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74193

Abstract: 74193 data sheet 74193 datasheet
Contextual Info: SPICE Device Model Si4904DY Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4701BDY

Abstract: Si4701BDY-T1-E3
Contextual Info: New Product Si4701BDY Vishay Siliconix Load Switch with Level-Shift PRODUCT SUMMARY VDS2 V 30 rDS(on) (Ω) ID (A) 0.015 at VGS2 = 10 V 7.0 0.021 at VGS2 = 4.5 V 6.0 RoHS 5, 6, 7 3, 4 VIN S2 COMPLIANT Q2 SO-8 8 S1 1 8 VHV VON/OFF 2 7 VIN S2 3 6 VIN S2 4 5

v5401

Abstract: Si4866BDY
Contextual Info: SPICE Device Model Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUV90N06-05

Abstract: SUV90N0
Contextual Info: SUV90N06-05 Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0052 at VGS = 10 V 0.0072 at VGS = 4.5 V ID (A) 90a • TrenchFET Power MOSFET • 175 °C Junction Temperature • PWM Optimized APPLICATIONS