30HS Search Results

10HS

Abstract: 10HSA 10HSB 10HSC 11HS 11HSA 11HSB 11HSC 12HS
Contextual Info: HS Series SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “Characteristics” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.

4V3HSB

Abstract: 18HSC 10HS 10HSA 10HSB 10HSC 11HS 11HSA 11HSB 11HSC
Contextual Info: HS Series SILICON PLANAR ZENER DIODES Max. 0.5 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Power Dissipation Ptot Value

FG2000DV-90

Contextual Info: mvmex b4E D • 7 5 cJ4t.21 DDDST^3 ID 6 ■ PRX FG2000DV ■. ■■■"' POUEREX INC Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France(43) 72.75.15 Asymmetric

F634

Abstract: irf635 IRF634d IRF637
Contextual Info: IRF634, IRF635 IRF636, IRF637 23 H A R R I S N-Channel Power MOSFETs Avalanche Energy Rated A u g u st 1991 Package Features T O -22 0 A B • 8.1A and 6.5A, 250V - 275V T O P VIEW • rps on = 0.45ft and 0.68H • Single Pulse Avalanche Energy Rated • S O A is Power-Dissipatlon Limited

D5073

Abstract: LPC47N249 marvell 88SA8040 INVENTEC KNOCKHILL 10 tc7007 D5070 l556 PLC1045P 63A05
Contextual Info: KNOCKHILL MP BUILD 2005.01.10 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : KNOCKHILL 10 SIZE CODE A3 CS SHEET REV DOC. NUMBER TC7007 1 A05 OF 63 TABLE OF CONTENTS

SRAM 64Kx16

Abstract: D010 D012
Contextual Info: ELECTRONIC DESIGNS S1E D INC ^E D I B * e * e n i e D # * l g n » In c . * 64Kx16 Static RAM CMOS, Module The EDI8F1664C is a high speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8 CMOS Static RAMs. The 32Kx8 RAMsare organized as two banks of32Kx16

Contextual Info: 82EDI EDI8F32128C Electronic D m Ij í m Inc. High Speed Four Megabit SRAM Module 128KX32 Static RAM CMOS, High Speed Module p ìio m u h m ìiy Features The EDI8F32128C is a high speed4 megabit Static RAM module organized as 128K words by 32 bits. This module is

10HS

Abstract: 10HSA 10HSB 10HSC 11HS 11HSA 11HSB 11HSC 12HS
Contextual Info: HS Series SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “Characteristics” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.

18HSC

Abstract: 16HSC 15HSC 10HS 10HSA 10HSB 10HSC 11HS 11HSA 11HSB
Contextual Info: HS Series SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 OC Parameter Power Dissipation Symbol Ptot Value Unit 1) mW 500 Junction Temperature Tj 175 O Storage Temperature Range TS - 55 to + 175 O 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.

10HS

Abstract: 10HSA 10HSB 10HSC 11HS 11HSA 11HSB 11HSC 12HS 12HSA
Contextual Info: HS Series SILICON PLANAR ZENER DIODES Max. 0.5 Min. 27.5 Max. 1.9 Cathode Band Part No. XXX Max. 3.9 ST "ST" Brand Min. 27.5 Glass Case JEDEC DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Power Dissipation Ptot Value Unit 1)

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

Contextual Info: ^EDI EDI8F12256C Péchente P—Igni tnc. High Speed Three Megabit SRAM Module 256Kx12 Static RAM CMOS, High Speed Module r a iu iiO M m f Features TheEDI8F12256C is a high speed 3 megabit Static RAM module organized as 256K words by 12 bits. This module is

10HS

Abstract: 10HSA 10HSB 10HSC 11HS 11HSA 11HSB 11HSC 12HS 2.4HSA
Contextual Info: HS Series SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “Characteristics” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.

digital ic

Abstract: LB1252
Contextual Info: » É J 7 * ^ 7 0 7b DOOllOb 1 I f D V S 'f-JS SANYO SEMICONDUCTOR C0RP~7b LB1252 • m o n o lith ic digital IC CIRCUIT DRAWING No.3021 ^vT i iT MICRO-PRINTER DRIVER ARRAY s • 3003A Features ■ Small input current permitting small output current from LSI: V |\p 6 V , l|\|=400juA typ.