30H1 Search Results

30H1 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TRS30H120H		Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 1200 V, 30 A, TO-247-2L	Datasheet

30H1 Datasheets (21)

Part	Manufacturer	Description	Datasheet Type	PDF
NCE30H15K	NCEPOWER	NCE30H15K is a channel enhancement mode power MOSFET with 30V drain-source voltage, 150A continuous drain current, and low on-resistance of 4.0mΩ at VGS=10V, using advanced trench technology for high efficiency in switching applications.	Original	PDF
AK30H12	AK Semiconductor	N-Channel Enhancement Mode Power MOSFET AK30H12 with 30V drain-source voltage, 120A continuous drain current, and 3.5mΩ maximum RDS(ON) at 10V gate-source voltage, featuring low gate charge and high switching performance in TO-220-3L package.	Original	PDF
AK30H15	AK Semiconductor	AK30H15 N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 150A continuous drain current, RDS(ON) less than 3.0 mΩ at VGS=10V, and low gate charge for high-frequency switching applications.	Original	PDF
NCE30H10K	NCEPOWER	NCE30H10K is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 100A continuous drain current, and low on-resistance of 4.0mΩ typical at 10V gate-source voltage, using advanced trench technology for high efficiency switching applications.	Original	PDF
NCE30H12K	NCEPOWER	NCE30H12K is an N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 120A continuous drain current, and low on-resistance of 4.5mΩ maximum at 10V gate-source voltage, utilizing advanced trench technology for high efficiency and thermal performance.	Original	PDF
NCE30H11K	NCEPOWER	NCE30H11K is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 110A continuous drain current, and low on-resistance of 2.6mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications.	Original	PDF
NCE30H10BK	NCEPOWER	30V, 100A NCE30H10BK Power MOSFET with advanced trench technology, offering low RDS(ON) of 3.5mΩ at VGS=10V, high cell density for ultralow on-resistance, and optimized for power switching, hard switching, and high-frequency applications.	Original	PDF
AK30H10	AK Semiconductor	AK30H10 N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 100A continuous drain current, and 5.5mΩ maximum RDS(ON) at 10V VGS, suitable for high-frequency switching applications.	Original	PDF
AK30H14K	AK Semiconductor	AK30H14K N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 140A continuous drain current, RDS(ON) less than 3.0mΩ at VGS=10V, low gate charge, and high ESD capability in TO-252-2L package.	Original	PDF
NCE30H15	NCEPOWER	NCE30H15 is a channel enhancement mode power MOSFET with 30V drain-source voltage, 150A continuous drain current, and low on-resistance of less than 3.0mΩ at VGS=10V, using advanced trench technology for high efficiency and thermal performance.	Original	PDF
NCE30H10BG	NCEPOWER	NCE30H10BG is a Channel Enhancement Mode Power MOSFET with 30V VDS, 100A ID, and low RDS(ON) of 3.5mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in power switching applications.	Original	PDF
NCE30H11BK	NCEPOWER	NCE30H11BK is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 110A continuous drain current, and low on-resistance of 2.7mΩ at VGS=10V, using advanced trench technology for high efficiency in DC/DC converters and synchronous rectifiers.	Original	PDF
NCE30H15BG	NCEPOWER	30V, 150A NCE30H15BG channel enhancement mode power MOSFET with advanced trench technology, RDS(ON) less than 2.3mΩ at VGS=10V, low gate charge, suitable for DC/DC converters and high-frequency switching applications.	Original	PDF
NCE30H11BG	NCEPOWER	NCE30H11BG is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 110A continuous drain current, and low on-resistance of 2.3mΩ at VGS=10V, using advanced trench technology for high efficiency in switching applications.	Original	PDF

NCE30H10	NCEPOWER	NCE30H10 is a channel enhancement mode power MOSFET with 30V drain-source voltage, 100A continuous drain current, and ultralow RDS(ON) of 4mΩ typical at VGS=10V, designed for high-frequency switching applications.	Original	PDF
NCE30H11G	NCEPOWER	NCE30H11G N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 110A continuous drain current, 2.4mΩ RDS(ON) at VGS=10V, and 3.0mΩ at VGS=4.5V, utilizing advanced trench technology for low on-resistance and high efficiency in power switching applications.	Original	PDF
NCE30H14K	NCEPOWER	30V, 140A NCE30H14K trench MOSFET with RDS(ON) less than 3.0mOhm at VGS=10V, designed for high-frequency switching, power supply, and hard-switched circuits, featuring low gate charge and high avalanche capability.	Original	PDF
NCE30H15B	NCEPOWER	NCE30H15B is a 30V N-channel enhancement mode power MOSFET with advanced trench technology, offering RDS(ON) less than 2.2mΩ at VGS=10V and 3.5mΩ at VGS=4.5V, continuous drain current up to 150A, and low gate charge for high-frequency switching applications.	Original	PDF
NCE30H15BK	NCEPOWER	NCE30H15BK N-channel enhancement mode power MOSFET with 30 V drain-source voltage, 150 A continuous drain current, and low on-resistance of 2.5 mΩ typical at 10 V gate-source voltage, suitable for high-frequency switching applications.	Original	PDF
NCE30H10G	NCEPOWER	NCE30H10G is an N-channel enhancement mode power MOSFET with 30V drain-source voltage, 100A continuous drain current, and low on-resistance of 1.9mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications.	Original	PDF

30H1 Price and Stock

Filter by Manufacturer

Select Manufacturer


STMicroelectronics FERD30H100SB-TR DIODE FERD 100V 30A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	FERD30H100SB-TR	Cut Tape	10,458		1	1 $1.10 10 $0.86 100 $0.68 1000 $0.49 10000 $0.49	Buy Now
	FERD30H100SB-TR	Digi-Reel	10,458		1	1 $1.10 10 $0.86 100 $0.68 1000 $0.49 10000 $0.49	Buy Now
	FERD30H100SB-TR	Tape & Reel	7,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.39	Buy Now
Avnet Americas	FERD30H100SB-TR	Tape & Reel	5,000	15 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.40	Buy Now
Mouser Electronics	FERD30H100SB-TR		15,316			1 $1.09 10 $0.86 100 $0.68 1000 $0.49 10000 $0.39	Buy Now
STMicroelectronics	FERD30H100SB-TR		15,419		1	1 $1.07 10 $0.84 100 $0.66 1000 $0.52 10000 $0.52	Buy Now
Avnet Silica	FERD30H100SB-TR		7,500	16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	FERD30H100SB-TR			16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
PanJit Group MBR30H150FCT_T0_00001 DIODE ARR SCHOTTKY 150V ITO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MBR30H150FCT_T0_00001	Tube	1,920		1	1 $1.79 10 $1.79 100 $0.76 1000 $0.55 10000 $0.45	Buy Now
Vishay Semiconductors MB30H100CTHM3-I DIODE ARR SCHOT 100V 15A TO263AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MB30H100CTHM3-I	Tape & Reel	800		800	1 - 10 - 100 - 1000 $1.04 10000 $0.93	Buy Now
Shenzhen Kedajia Electronics Co Ltd VSEB0730H-1R2MC FIXED IND 1.2UH 18.5A 4.6MOHM MA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	VSEB0730H-1R2MC	Cut Tape	659		1	1 $2.20 10 $1.81 100 $1.49 1000 $1.49 10000 $1.49	Buy Now
	VSEB0730H-1R2MC	Digi-Reel	659		1	1 $2.20 10 $1.81 100 $1.49 1000 $1.49 10000 $1.49	Buy Now
Qualcomm B39431B3730H110 FILTER SAW 433.92MHZ 6-SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	B39431B3730H110	Digi-Reel	611		1	1 $1.49 10 $1.22 100 $0.99 1000 $0.81 10000 $0.81	Buy Now
	B39431B3730H110	Cut Tape	611		1	1 $1.49 10 $1.22 100 $0.99 1000 $0.81 10000 $0.81	Buy Now
Richardson RFPD	B39431B3730H110				9,000	1 - 10 - 100 - 1000 - 10000 $0.71	Buy Now

Find more 30H1 price and stock on Findchips.com

30H1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MBR30H100CT Abstract: MBR30H90CT MBRF30H100CT MBRF30H90CT Contextual Info: New Product MBR F,B 30H90CT & MBR(F,B)30H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB 2 MBR30H90CT 30H100CT PIN 1 PIN 2 PIN 3	Original	30H90CT 30H100CT O-220AB ITO-220AB MBR30H90CT MBR30H100CT MBRF30H90CT MBRF30H100CT O-263AB J-STD-020, MBR30H100CT MBR30H90CT MBRF30H100CT MBRF30H90CT	PDF
30H1601 Abstract: ABB thyristor 5 5SYA2020 Contextual Info: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 1800 3108 4882 47x103 0.984 0.081 V A A A V mΩ Phase Control Thyristor 5STP 30H1801 Doc. No. 5SYA1066-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	30H1801 5SYA1066-01 30H1801 30H1601 30H1401 5SYA2020 5SYA2034 CH-5600 30H1601 ABB thyristor 5 5SYA2020	PDF
30H1801 Contextual Info: V IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 1800 3108 4882 47x103 0.984 0.081 V A A A V mΩ Ω Phase Control Thyristor 5STP 30H1801 Doc. No. 5SYA1066-01 Dec. 03 • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	30H1801 5SYA1066-01 30H1801 30H1601 30H1401 YA1066-01 5SYA2020 5SYA2034 CH-5600	PDF
30H100CT Abstract: 30H100C Contextual Info: New Product MBR F,B 30H90CT & MBR(F,B)30H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB 2 MBR30H90CT 30H100CT PIN 1 PIN 2 PIN 3	Original	30H90CT 30H100CT O-220AB ITO-220AB MBR30H90CT MBR30H100CT MBRF30H90CT MBRF30H100CT O-263AB J-STD-020, 30H100CT 30H100C	PDF
30h100c Abstract: 30H10 30h1 30H100 Contextual Info: New Product MBR F,B 30H90CT & MBR(F,B)30H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB 2 MBR30H90CT 30H100CT PIN 1 PIN 2 PIN 3	Original	30H90CT 30H100CT O-220AB ITO-220AB MBR30H90CT MBR30H100CT MBRF30H90CT MBRF30H100CT O-263AB J-STD-020, 30h100c 30H10 30h1 30H100	PDF
Contextual Info: 5STP 30H1801 5STP 30H1801 Old part no. T 989-3030-18 Phase Control Thyristor Properties High operational capability Possibility of serial and parallel connection Applications Controlled rectifiers AC drives Key Parameters V DRM , V RRM = 1 800 I TAVm = 3 108	Original	30H1801 1768/138a, T/086/03a Jul-11 30HOn-state	PDF
30H100 Contextual Info: MBR F,B 30H90CT, MBR(F,B)30H100CT www.vishay.com Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AB ITO-220AB MBR30H90CT 30H100CT PIN 1 PIN 2	Original	30H90CT, 30H100CT O-220AB ITO-220AB MBR30H90CT MBR30H100CT MBRF30H90CT MBRF30H100CT O-263AB MBRB30H90CT 30H100	PDF
30H100 Contextual Info: MBR F,B 30H90CT, MBR(F,B)30H100CT www.vishay.com Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AB ITO-220AB MBR30H90CT 30H100CT PIN 1 PIN 2	Original	30H90CT, 30H100CT O-220AB ITO-220AB MBR30H90CT MBR30H100CT MBRF30H90CT MBRF30H100CT O-263AB J-STD-020, 30H100	PDF
30H100CT Abstract: 30h100c MBRB30H100CT MBR30H100CT MBR30H90CT MBRF30H100CT MBRF30H90CT 30h100 Contextual Info: New Product MBR F,B 30H90CT & MBR(F,B)30H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB 2 MBR30H90CT 30H100CT PIN 1 PIN 2 PIN 3	Original	30H90CT 30H100CT O-220AB ITO-220AB MBR30H90CT MBR30H100CT MBRF30H90CT MBRF30H100CT O-263AB J-STD-020, 30H100CT 30h100c MBRB30H100CT MBR30H100CT MBR30H90CT MBRF30H100CT MBRF30H90CT 30h100	PDF
VW3A Abstract: S1139 30H1 Contextual Info: i i/e 508* i g A3H JO 133HS 31V0S 9NIMVdQ U3W01SÌD 868e^l°Q) 6AA00 IV ON 3Q03 39V0 V y]9wnN idvd 9 319Vi ]3S 1H9I3W oszs-n I 3ZI S ( 3dÀ1-A 90d) A19H3SSV 9NISÌ10H dVO NO111SOd2I S3IN3S (S20' )fr9'0 3WVN A{\|a\|psuuo^]_[ 31 .¿C./SCA/ 9NISnOH 319V1 33S	OCR Scan	133HS 31V0S U3W01S 6AA00 319V1 8995-80I 319Vi 310V1 J31VW H19N31 VW3A S1139 30H1	PDF
40404040H Abstract: 6115 l500m DPZ256 Contextual Info: RPR 1 3 1993 DPZ256X32V3 256K X 32 FLASH ELPROM VERSA-STACK M ODULE PRELIM IN ARY DESCRIPTION: The D P Z 2 5 6 X 3 2 V 3 "V E R S A -S T A C K " m odule is a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers	OCR Scan	DPZ256X32V3 56X32V3 12fiK IhroughZ256X32 125-c 120ns 150ns 170ns 200ns 40404040H 6115 l500m DPZ256	PDF
COLOR tv tube charger circuit diagrams Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents	Original	vse-db0001-1102 I8262 COLOR tv tube charger circuit diagrams MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a	PDF
GMR30H125C Abstract: GMR30H125CTA3T GMR30H125CTB3T GMR30H125CTP3T Contextual Info: A Power Discrete 30H125C A MICROELECTRONICS HIGH VOLTAGE POWER SCHOTTKY RECTIFIER DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. Major Ratings and Characteristics Values Unit 2 X 15 A VRRM 125 V	Original	GMR30H125C O-220AB O-263-2 O-220FPAB O-263-2 GMR30H125C GMR30H125CTA3T GMR30H125CTB3T GMR30H125CTP3T	PDF
GTO hvdc thyristor Abstract: 5STP 57U4200 abb thyristors 5STP03D6500 6" thyristor for HVDC field controlled thyristor ABB Thyristor Field measurements on High Power Press Pack Semiconductors 5STP20N8500 GTO thyristor ABB Contextual Info: Phase Control and Bi-directionally Controlled Thyristors ABB Semiconductors The work-horse of power conversion Since its introduction almost 50 years ago, the Phase Control Thyristor has been the back-bone of the high power electronics industry. Its field of application ranges from kW DC-drives	Original	5SYA2006 5SYA2020 5SYA2034 5SYA2036 5SYA2048 5SYA2049 5SYA2051 5SZK9104 5SZK9105 CH-5600 GTO hvdc thyristor 5STP 57U4200 abb thyristors 5STP03D6500 6" thyristor for HVDC field controlled thyristor ABB Thyristor Field measurements on High Power Press Pack Semiconductors 5STP20N8500 GTO thyristor ABB	PDF

Contextual Info: 16/32-Bit Architecture XC2200M Derivatives 16/32-Bit Single-Chip Microcontroller with 32-Bit Performance XC2000 Family / Base Line User’s Manual V2.0 2009-03 M ic r o co n t ro l l e r s Edition 2009-03 Published by Infineon Technologies AG 81726 Munich, Germany	Original	16/32-Bit XC2200M 16/32-Bit 32-Bit XC2000 RBUF01SRH RBUF01SRL B158-H9251-G2-X-7600	PDF
vfd ac motor detailed circuit diagram Abstract: CMS11 vfd circuit diagram for ac motor using pwm bbc cs1 MB89890 detailed vfd circuit diagram for motor single phase vfd circuit diagram on off control of SMALL dc motor using dtmf vfd using pid 0007H Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM25-00105-1E F2MC-8L FAMILY 8-BIT MICROCONTROLLER APPLICATION NOTE Volume II 1. The products described in this manual and the specifications thereof may be changed without prior notice. To obtain up-to-date information and/or specifications, contact your Fujitsu sales representative or Fujitsu authorized	Original	CM25-00105-1E MB89910 vfd ac motor detailed circuit diagram CMS11 vfd circuit diagram for ac motor using pwm bbc cs1 MB89890 detailed vfd circuit diagram for motor single phase vfd circuit diagram on off control of SMALL dc motor using dtmf vfd using pid 0007H	PDF
t53 1946-g402 Abstract: BJ8-20 cl67 Contextual Info: WET TANTALUM: Silver Case Type W PRODUCT FEATURES • • • • Polar Elastomer or Glass Seal Low DC Leakage Operating Range -55°C to +85°C and with voltage derating to +125°C • Voltage Range 6 to 125VDC • Capacitance Range 1.7 to 1200^F Tansitor’s Type W capacitors are porous anode types which	OCR Scan	125VDC MIL-C-3965 MIL-C-39006. t53 1946-g402 BJ8-20 cl67	PDF
bosch mp 5.2 ecu Abstract: STK power amplifier 2145 STK and STR integrated circuits, 2011 edition RH76 ecu bosch 7.4.4 ICL Logic metal detector circuit with pcb bosch mp 3.2 ecu xc2000 instruction set IC BOSCH ISO 9141 Contextual Info: 16/32-Bit Architecture XC27x8X Derivatives 16/32-Bit Single-Chip Microcontroller with 32-Bit Performance XC2000 Family / Premium Line User’s Manual V1.0 2011-01 Microcontrollers Edition 2011-01 Published by Infineon Technologies AG 81726 Munich, Germany	Original	16/32-Bit XC27x8X 16/32-Bit 32-Bit XC2000 RBUF01SRH RBUF01SRL bosch mp 5.2 ecu STK power amplifier 2145 STK and STR integrated circuits, 2011 edition RH76 ecu bosch 7.4.4 ICL Logic metal detector circuit with pcb bosch mp 3.2 ecu xc2000 instruction set IC BOSCH ISO 9141	PDF
ecu bosch 7.4.5 Abstract: gtm infineon vhdl code for 8-bit crc-8 HP 0AA8h BOSCH ECU information bosch mp 5.2 ecu STK and STR integrated circuits, 2011 edition tricore loader floating point FAS coding using vhdl 040-H Contextual Info: 16/32-Bit Architecture XC27x2X Derivatives 16/32-Bit Single-Chip Microcontroller with 32-Bit Performance XC2000 Family / Compact Line User’s Manual V1.1 2011-03 Microcontrollers Edition 2011-03 Published by Infineon Technologies AG 81726 Munich, Germany	Original	16/32-Bit XC27x2X 16/32-Bit 32-Bit XC2000 RBUF01SRH RBUF01SRL ecu bosch 7.4.5 gtm infineon vhdl code for 8-bit crc-8 HP 0AA8h BOSCH ECU information bosch mp 5.2 ecu STK and STR integrated circuits, 2011 edition tricore loader floating point FAS coding using vhdl 040-H	PDF
0000-1FFFH Abstract: X88C75 application 80C51 AN64 AN66 X88C75 Contextual Info: APPLICATION NOTES A V A I L A B L E • AN64 • AN66 X88C75AN62 SLIC E2 X88C75 SLIC® E2 Microperipheral SLIC Port Expander and E2 Memory FEATURES • High Performance CMOS —Fast Access Time, 120ns —Low Power • 60mA Active • 100µA Standby • PDIP, PLCC, and TQFP Packaging Available	Original	X88C75AN62 AN64EAN66 X88C75 120ns 0000-1FFFH X88C75 application 80C51 AN64 AN66	PDF
Contextual Info: 16-Bit Architecture XE167xM/XE164xM/XE 162xM Derivatives 16-Bit Single-Chip Real Time Signal Controller XE166 Family / Base Line User’s Manual V2.0 2009-03 M ic r o co n t ro l l e r s Edition 2009-03 Published by Infineon Technologies AG 81726 Munich, Germany	Original	16-Bit XE167xM/XE164xM/XE 162xM 16-Bit XE166 RBUF01SRH RBUF01SRL B158-H9256-G2-X-7600	PDF
PCR 406 J Abstract: MPC5605 MPC5606B MPC5605B PCR 606 J MPC5607BRM transistor pcr 606 j MPC5607B APC UPS CIRCUIT DIAGRAM 7M 0880 IC pin ,j10 Contextual Info: MPC5607B Microcontroller Reference Manual Devices Supported: MPC5607B MPC5606B MPC5605B MPC5607BRM Rev. 6 30 Jun 2010 MPC5607B Microcontroller Reference Manual, Rev. 6 Freescale Semiconductor 1 Preliminary—Subject to Change Without Notice Chapter 1 Overview	Original	MPC5607B MPC5607B MPC5606B MPC5605B MPC5607BRM PCR 406 J MPC5605 MPC5606B MPC5605B PCR 606 J MPC5607BRM transistor pcr 606 j APC UPS CIRCUIT DIAGRAM 7M 0880 IC pin ,j10	PDF
SST39LF016 Abstract: SST39LF080 SST39VF016 SST39VF080 30H1 SST39VF080-70-4C-B3K 27H1 Contextual Info: 8 Mbit / 16 Mbit x8 Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 SST39LF/VF080 / 0163.0 & 2.7V 8Mb / 16Mb (x8) MPF memories Data Sheet FEATURES: • Organized as 1M x8 / 2M x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF080/016	Original	SST39LF080 SST39LF016 SST39VF080 SST39VF016 SST39LF/VF080 SST39LF080/016 SST39VF080/016 SST39VF080/0161 48-tfbga-B3K-6x8-450mic-2 SST39VF016 30H1 SST39VF080-70-4C-B3K 27H1	PDF
Arduino Mega2560 Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM	Original	CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l	PDF

30H1 Search Results

30H1 Result Highlights (1)

30H1 Datasheets (21)

30H1 Price and Stock

STMicroelectronics FERD30H100SB-TR

PanJit Group MBR30H150FCT_T0_00001

Vishay Semiconductors MB30H100CTHM3-I

Shenzhen Kedajia Electronics Co Ltd VSEB0730H-1R2MC

Qualcomm B39431B3730H110

30H1 Datasheets Context Search

MBR30H100CT

30H1601

30H1801

30H100CT

30h100c

30H100

30H100

30H100CT

VW3A

40404040H

COLOR tv tube charger circuit diagrams

GMR30H125C

GTO hvdc thyristor

vfd ac motor detailed circuit diagram

t53 1946-g402

bosch mp 5.2 ecu

ecu bosch 7.4.5

0000-1FFFH

PCR 406 J

SST39LF016

Arduino Mega2560