27H1 Search Results

5STP 27H1800

Abstract: 27H1200 27H1800
Contextual Info: Key Parameters VDSM = 1800 ITAVM = 3000 ITRMS = 4710 ITSM = 47000 VT0 = 0.88 rT = 0.103 V A A A V mΩ Phase Control Thyristor 5STP 27H1800 Doc. No. 5SYA 1048-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

5STP27H1800

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1800 V 3000 A 4710 A 47000 A 0.88 V 0.103 mΩ Ω Phase Control Thyristor 5STP 27H1800 Doc. No. 5SYA1048-02 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1800 V 3000 A 4710 A 47000 A 0.88 V 0.103 mΩ Ω Phase Control Thyristor 5STP 27H1800 Doc. No. 5SYA1048-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

UPB566

Abstract: UPB562AC upb566c UPB571C nec upB562AC UPB551C UPB554C UPB571 uPB555 UPB552C
Contextual Info: Additional Silicon Monolithic Circuit Products NEC/ CALIFORNIA 1SE D • L^27H14 0DD17fl7 5 ■ AMPLIFIERS PART NUMBER BW * GHz Gv @ 0.5 GHz (dB) UPC1655C UPC1656C 0.9 1.2 18 19 PldB @ 0.5 GHz (dBm) NF @ 0.5 GHz (dB) 5.5 10.5 5.0 10.5 (V) Icc (mA) PACKAGE

5STP27H1800

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 1800 V = 3000 A = 4710 A = 50.54x1 A 3 = 0.88 V = 0.103 mΩ Phase Control Thyristor 5STP 27H1800 Doc. No. 5SYA1048-03 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: VDSM = 1800 V ITAVM = 3000 A ITRMS = 4710 A ITSM = 47000 A VT0 = 0.88 V rT = 0.103 mΩ Phase Control Thyristor 5STP 27H1800 Doc. No. 5SYA1048-02 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: TO SHIBA 2SK2839 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2839 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 4V Gate Drive

SCN68562

Abstract: scn68562 Users guide 8085 assembly language SC26C562 SC68C562 SC68C562A8A SC68C562C1A SC68C562C1N SCN26562 6230ah
Contextual Info: Philips Semiconductors Section 1 CDUSCC User’s Guide ICs for Data Communications CONTENTS Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 572 Table of Contents Forward . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

GTO hvdc thyristor

Abstract: 5STP 57U4200 abb thyristors 5STP03D6500 6" thyristor for HVDC field controlled thyristor ABB Thyristor Field measurements on High Power Press Pack Semiconductors 5STP20N8500 GTO thyristor ABB
Contextual Info: Phase Control and Bi-directionally Controlled Thyristors ABB Semiconductors The work-horse of power conversion Since its introduction almost 50 years ago, the Phase Control Thyristor has been the back-bone of the high power electronics industry. Its field of application ranges from kW DC-drives

7H1B

Abstract: 2SK2741
Contextual Info: 2SK2741 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2741 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.12 Ω (typ.) High forward transfer admittance

Contextual Info: 8 Mbit / 16 Mbit x8 Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet FEATURES: • Organized as 1M x8 / 2M x8 • Latched Address and Data • Single Voltage Read and Write Operations - 3.0-3.6V for SST39LF080/016 - 2.7-3.6V for SST39VF080/016

RCV56DPF-PLL

Abstract: rbs 6201 manual RBS 6201 TECHNICAL 102184B CX06827 RBS 3106 L8773A RBS 6201 P2109-V90 CX81801
Contextual Info: AT Commands for CX81801 SmartV.XX, CX06833 SMXXD, CX81300 SmartACF, and CX06827 SCXXD Modems Reference Manual Doc. No. 102184B July 1, 2003 AT Commands for CX81801/CX06833/CX81300/CX06827 Modems Reference Manual Revision Record Revision B A Date 7/1/2003 5/23/2003

2SK2839

Contextual Info: 2SK2839 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2839 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gatedrive Low drain−source ON resistance : RDS (ON) = 30 mΩ (typ.) High forward transfer admittance

CX93001

Abstract: cx93010 CX93001-EIS CX930xx REM-201692B CX93011 CSM92-SP CX20548 CX930xx-2x Conexant CX93010
Contextual Info: AT Commands for CX930xx-2x Modem Reference Manual REM-201692B October 23, 2008 AT Commands for CX930xx-2x Modem Reference Manual Revision Record Revision A B Date July 29, 2008 October 23, 2008 Comments Initial release Rev B release 2008 Conexant Systems, Inc.

CX86501

Abstract: mt5656rj S000364A digital pads modem Stellaris digital pad fr 107 MIC 3 x 4 numeric keypad for interfacing 3 x 4 telephone keypad datasheet NVM02-16 credit card in india statistic table digit 3000 keypad
Contextual Info: RJModem MT5656RJ AT Commands Reference Guide RJModem AT Commands Reference Guide MT5656RJ Product Number S000364A, Version A Copyright This publication may not be reproduced, in whole or in part, without prior expressed written permission from MultiTech Systems, Inc. All rights reserved.

CX93001-EIS

Abstract: CX93001 CX93010 Conexant CX93040 CX930xx REM-201692C CX930xx-2x Conexant CX93010 CX93011 CSM92-SP
Contextual Info: AT Commands for CX930xx-2x and CX93040-1x Modems Reference Manual REM-201692C June 27, 2011 AT Commands for CX930xx-2x and CX93040-1x Modem Reference Manual Revision Record Revision A B C Date July 29, 2008 October 23, 2008 June 27, 2011 Comments Initial release

Contextual Info: TO SHIBA 2SK2839 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2839 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive

Contextual Info: TOSHIBA 2SK2839 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV] 2SK2839 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U n it in mm 4V G ate D rive

2SK2839

Contextual Info: 2SK2839 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2839 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gatedrive z Low drain−source ON-resistance : RDS (ON) = 30 mΩ (typ.) z High forward transfer admittance

2SK2839

Contextual Info: TO SHIBA 2SK2839 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2839 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 4V Gate Drive

marking IA

Contextual Info: TOSHIBA 2SK2742 TOSHIBA FIELD EFFECT TRANSISTOR 1 Ç K SILICON N CHANNEL MOS TYPE L2-tt- M O SV 1 7 û 1 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

CX930xx

Abstract: cx93010 CX93011 cx93010 cx20548 CSM92-SP CX93011 CSMxx CX93021 CX20548 102752B Conexant CX93010
Contextual Info: AT Commands for CX930xx Modem Reference Manual Doc. No. 102752B April 6, 2006 AT Commands for CX930xx Modem Reference Manual Revision Record Revision A B Date 9/28/2005 4/6/2006 Comments Initial release. Rev. B release. 2005, 2006 Conexant Systems, Inc.

S7114

Abstract: SST39LF080 SST39VF080
Contextual Info: 8 Mbit x8 Multi-Purpose Flash SST39LF080 / SST39VF080 SST39LF/VF0803.0 & 2.7V 8Mb (x8) MPF memories Data Sheet FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF080 – 2.7-3.6V for SST39VF080 • Superior Reliability

2SK2742

Contextual Info: 2SK2742 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2742 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.28 Ω (typ.) l High forward transfer admittance