UPC1656C Search Results

C1656C

Abstract: AD 8723
Contextual Info: 850 MHz WIDE-BAND SILICON MMIC AMPLIFIER UPC1656C NOISE FIGURE AND VOLTAGE GAIN vs. FREQUENCY FEATURES • 850 MHz FREQUENCY RESPONSE @ 3 dB DOWN • POWER GAIN OF 19 d B @ f = 500 MHz • 10.5 dBm OUTPUT POWER m T> • LOW COST PACKAGE • 50 £2 GAIN BLOCK

UPC1656C

Abstract: nec 8749
Contextual Info: 850 MHz WIDE-BAND SILICON MMIC AMPLIFIER UPC1656C NOISE FIGURE AND VOLTAGE GAIN vs. FREQUENCY FEATURES • 850 MHz FREQUENCY RESPONSE @ 3 dB DOWN VCC = 10 V 25 10 • 10.5 dBm OUTPUT POWER Gain, GS dB • LOW COST PACKAGE • 50 Ω GAIN BLOCK GS 20 8 6

UPC1656C

Abstract: p124-4 TIPC-16-56
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC1656C SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT WIDE BAND AMPLIFIER DESCRIPTION The ¿iPC1656C CONNECTION DIAGRAM Top View is a silicon monolithic integrated circuit especially designed as a wide band amplifier convering HF band

upb566c

Abstract: UPB562AC UPB552C UPB554C UPB569C UPB571 uPB555 UPB566 UPC1663C UPB551C
Contextual Info: AMPLIFIE PART NUMBER PACKAGE UPC1655C UPC1656C 'At 3 dB down. DIFFERENTIAL AMPLIFIERS PART NUMBER DIFFERENTIAL GAIN* PROPAGATION DELAY SUPPLY VOLTAGE PACKAGE ns UPC1663B UPC1663C UPC1663P UPC1664C *AII gain select pins are open SILICON PRESCALERS PART NUMBER FREQUENCY

UPB566

Abstract: UPB562AC upb566c UPB571C nec upB562AC UPB551C UPB554C UPB571 uPB555 UPB552C
Contextual Info: Additional Silicon Monolithic Circuit Products NEC/ CALIFORNIA 1SE D • L^27H14 0DD17fl7 5 ■ AMPLIFIERS PART NUMBER BW * GHz Gv @ 0.5 GHz (dB) UPC1655C UPC1656C 0.9 1.2 18 19 PldB @ 0.5 GHz (dBm) NF @ 0.5 GHz (dB) 5.5 10.5 5.0 10.5 (V) Icc (mA) PACKAGE

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

transistor t06

Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX

UPC1651

Abstract: UPC1651G UPCI65IG 1SV80 UPCI651G UPC1656C UPC1653 uPC1655 uPC1656 uPC1655C
Contextual Info: California Eastern Laboratories AN-SI-1005 APPLICATION NOTE Silicon Microwave Broadband Amplifier MMICs Introduction In the field of communications equipment, and particularly consumer equipment such as cable TV and super high frequency recievers or television tuners, there is a great demand for amplifiers in the range from UHF to microwave.

Contextual Info: 850 MHz WIDE-BAND SILICON MMIC AMPLIFIER UPo i 656c NOISE FIGURE AND VOLTAGE GAIN vs. FREQUENCY FEATURES 850 MHz FREQUENCY RESPONSE @ 3 dB DOWN POWER GAIN OF 19 dB @ f = 500 MHz 10.5 dBm OUTPUT POWER a -a LOW COST PACKAGE 50 Q GAIN BLOCK o z 60 DESCRIPTION

uPC1656C

Abstract: Monolithic Amplifier NEC
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC1656C SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT WIDE BAND AMPLIFIER DESCRIPTION The 656C CONNECTION DIAGRAM Top View is a silicon monolithic integrated circuit especially designed as a wide band amplifier convering HF band

mmic a08

Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18

nec 8749

Abstract: UPC1656C TA 8639 P
Contextual Info: 850 MHz WIDE-BAND SILICON MMIC AMPLIFIER ijpci656C NOISE FIGURE AND VOLTAGE GAIN vs. FREQUENCY FEATURES 850 MHz FREQUENCY RESPONSE @ 3 dB DOWN POWER GAIN OF 19 dB @ f = 500 MHz 10.5 dBm OUTPUT POWER m T> LOW COST PACKAGE 50 n GAIN BLOCK i O 50 DESCRIPTION

1656C

Abstract: UPC1656C
Contextual Info: 850 MHz WIDE-BAND SILICON MMIC AMPLIFIER npC1656C FEATURES NOISE FIGURE AND v o l t a g e - vs. FREQUENCY g a in • 850 MHz FREQUENCY RESPONSE @ 3 dB DOWN

UPC1651

Abstract: UPC1651G UPCI651G 1SV80 UPC1653 UPC1654A UPC1656C UPC1652G uPC1652 uPC1655
Contextual Info: California Eastern Laboratories AN-SI-1005 APPLICATION NOTE Silicon Microwave Broadband Amplifier MMICs Introduction In the field of communications equipment, and particularly consumer equipment such as cable TV and super high frequency recievers or television tuners, there is a great demand for amplifiers in the range from UHF to microwave.