30DQ Search Results

20F001N

Abstract: SF1012 valor VALOR SF1012 YCL-20F001N 20f001n ycl diode T35 -4-D6 SF1012 valor ST7032 16PT-004S ycl 20f001n
Contextual Info: 5- &KLS%ULGJH • *OXHOHVVFRQQHFWLRQWRPRVW/$1 FKLSV • 8SWR0ESV6\QF:$1OLQN • 8SWRNESV$V\QF:$1OLQN ZLWKLQWHUQDOEDXGUDWHJHQHUDWRU • DGGUHVV/$1WDEOH • • • • • $785(6 • +LJKSHUIRUPDQFHVLQJOHFKLSIXOO

Contextual Info: HB56SW872ESN Series, HB56SW864ESN Series 64 MB Unbuffered EDO DRAM DIMM 8-Mword X 72/64-bit, 4 k Refresh, 2-Bank Module 36/32 pcs of 4 M X 4 Components HITACHI ADE-203-761C (Z) Rev. 3.0 Nov. 1997 Description The HB56SW872ESN, HB56SW864ESN belong to 8 Byte DIMM (Dual In-line Memory Module) family,

Contextual Info: PRELIMINARY MICRON I 4’ 8 M E Gx64 SDRAM SODIMMs TECHNOLOGY, INC. SMALL-OUTLINE -s = WT | j Q II I t U n n i V I For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html II I t I I | j I I I I

SA1381

Abstract: SS823 RDATA13 3RA61 AC21T n25h VSS1490 bwd9 HAD44 HAD48
Contextual Info: A B C D REVISIONS ZONE LTR CN8237/CX29704 PCB:BT01-D255-011 A DESCRIPTION INITIAL APPROVED DATE RELEASE 1 1 DL1 DELAYLINE 2.5NS 1 2 U7 3 CN8237 SEGMENTATION SCLK0 R124 18 DL2 B3SCLK0 A3SCLK1 R116 18 DELAYLINE 2.5NS POWER VDD PINS E7, E8, E11, E12, E15, E16

ADSP-21160

Abstract: KLS65
Contextual Info:   DSP Microcomputer ADSP-21160 Preliminary Technical Data 6800$5< . < ($785(6 ‡ ‡ ‡ ‡ ‡ y r a n i l m a i l c i e Pr chn a Te Dat ‡ ‡ ‡ ‡ ‡ DUAL-PORTED SRAM CORE PROCESSOR TIMER INSTRUCTION CACHE TWO INDEPENDENT DUAL-PORTED BLOCKS 32 x 48-BIT

marking code 17W

Abstract: ZM marking
Contextual Info: OBSOLETE 2, 4 MEG X 72 SDRAM DIMMs MICRON I TECHNOLOGY, INC. MT9LSDT272A, MT18LSDT472A SYNCHRONOUS DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View

IL324

Abstract: ZM14 062 JRC
Contextual Info: ADVANCE 1, 2 MEG X 32 SDRAM DIMM MICRON I TECHNOLOGY, INC. MT2LSDT132U MT4LSDT232UD SYNCHRONOUS DRAM M O D U L E F or the latest data sheet revisions, please refer to the Micron Web site: www.m icron.com /m ti/m sp/htm l/datasheet.htm l FEATURES * * * * *

Contextual Info: IBM13T2649JC 2M x 64 1 Bank S D R A M SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: CAS Latency • • • • • • jfcK I Clock Frequency jtcK

Contextual Info: M 5 M 4 1 6 1 6 B J , T P , R T - 6 , - 7 , - 8 , - 6 S , " i ' S , ” 8 S FAST PAGE MODE 16777216-BIT 1048576-WORD BY 16-BfT DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 16-bit dynamic RAMS, fabricated with the high performance CMOS process,and is ideal for

Contextual Info: ADVANCE MICRON I 1 , 2 MEG X 32 SDRAM DIMM TECHNOLOGY, INC. SYNCHRONOUS ¡¡£fg * I JU For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html IWI a \ IWI f J I J I I I I V I V / I / w FEATURES

U7846

Abstract: 8MX64
Contextual Info: visti VP864648Q41B 8Mx64-Bit SDRAM SODIMM Module Preliminary Description The VP864648041B SODIMM are 8Mx64-bit small-outline dual-in-line synchronous dynamic RAM module SODIMM . It is mounted with 8 pieces of 8 Mx 8 synchronous DRAM (VG36648041BT), and each in

Contextual Info: IB M 1 1 D 2 4 0 0 B A IB M 1 1 D 2 3 7 0 B A IB M 1 1 E 2 4 0 0 B A IB M 1 1 E 2 3 7 0 B A 2M X 36/2M x 40 D R A M M odules Features Optimized for use in ECC applications High Performance C M O S process Single 5V, ± 0.5V Power Supply All inputs & outputs are fully TTL & CM O S

Contextual Info: TMS28F004Axy, TMS28F400Axy 52 42 88 BY 8-B IT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SMJS829A - JANUARY 1996 - REVISED AUGUST 1997 • Organization . . . 524288 By 8 Bits 262144 By 16 Bits • Array-Blocking Architecture - One 16K-Byte Protected Boot Block

Contextual Info: IBM11T2645HP 2M X 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • System Performance Benefits: - Reduced noise 18 VSs/18VCC pins

Contextual Info: IBM11T2640HP 2M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • Performance: -60 ! -70 ! i^RAC ! RAS Access Tim e 60ns ! 70ns j

Contextual Info: IBM11M4730H IBM11M4730HB 4M x 72 D RAM M O D U LE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • System Performance Benefits: • 4Mx72 Dual Bank Fast Page Mode DIMM -Buffered inputs (except RAS, Data)

ez9m

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ohd3

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Contextual Info: Metalized Polypropylene Film Capacitor HHC SERIES HIGH PULSE CAPACITOR Features Ɣ&RPSDFWVL]HDQGUHVLQFDVH Ɣ%HVWIRUKLJKIUHTXHQF\DQGKLJKFXUUHQW Applications Ɣ+LJKIUHTXHQF\FLUFXLW+LJKYROWDJHUHVRQDQW FLUFXLW6QXEEHUFLUFXLWDQG3URWHFWLRQRI

la 7630

Contextual Info: IBM11T2645HP 2M X 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • System Performance Benefits: - Reduced noise 18 Vss/18VCC pins

M5M41816

Abstract: M5M418160B m5m418160bj
Contextual Info: v r r S V B 'S '- f '. S ’* M 5 M 4 1 8 1 6 0 B J , T P , R T - 6 , - 7 , - 8 , - 6 S / 'S , 8 8 FAST PAGE MODE 16777216-BIT 1048576-WQRD BY 16-BIT } DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 16-bit dynamic RAMS, fabricated with the high performance CMOS process,and is ideal for

Contextual Info: IB M 1 1 M 4 7 3 5 H B 4M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Au contacts • Optimized for ECC applications • 4Mx72 Dual Bank EDO Mode DIMM • System Performance Benefits: • Performance: -Buffered inputs (except RAS, Data)

Contextual Info: HYMD116645A8-K/H/L 16UX64 DDR SDRAM Unbuffered DIMM SERIAL PRESENCE DETECT Bin Sort : K D D R 266A @ C L=2 , H (D D R 2 6 6 B @ C L = 2 .5 ), L(D D R 200@ C L =2) Function Supported Hexa Value Function Description s $ t*# H K Nu m b er o f Bytes w ritten into serial m em ory a t m odule

FOH 300

Contextual Info:  #RTKN '630LFURFRPSXWHU $'63/ 3URGXFW1DPH+HUH 3UHOLPLQDU\7HFKQLFDO'DWD 3UHOLPLQDU\7HFKQLFDO'DWD $785(6 3HUIRUPDQFH W W W W W W W  6LQJOH&\FOH ,QVWUXFWLRQ ([HFXWLRQ 6LQJOH&\FOH &RQWH[W 6ZLWFK %XV $UFKLWHFWXUH $OORZV 'XDO 2SHUDQG )HWFKHV LQ (YHU\ ,QVWUXFWLRQ &\FOH