30A BIPOLAR Search Results

Contextual Info: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES High speed switching Low Saturation Voltage VCE sat =3.0V@IC=30A Industry Standard TO-3P Package 1000V IC 30A C G C RoHS Compliant E

Contextual Info: AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features 1100V VCES High speed switching Low Saturation Voltage VCE sat =3.0V@IC=30A Industry Standard TO-3P Package 30A IC C G RoHS Compliant C

Contextual Info: AP30G120SW Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features High speed switching VCES Low Saturation Voltage VCE sat =3.0V@IC=30A IC 1200V 30A C CO-PAK, IGBT with FRD RoHS Compliant G C

Contextual Info: AP30G120ASW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features High Speed Switching VCES Low Saturation Voltage V CE sat =2.9V@IC=30A CO-PAK, IGBT With FRD RoHS Compliant IC 1200V 30A C C

AP30G120SW

Abstract: AP30G120 ictc 500V N-Channel IGBT TO-3P
Contextual Info: AP30G120SW Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High speed switching VCES ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A IC 1200V 30A C ▼ CO-PAK, IGBT with FRD ▼ RoHS Compliant

v120t

Abstract: AP30G120W
Contextual Info: AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1200V IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package 30A C G ▼ RoHS Compliant

ap30g120w

Contextual Info: AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1100V 30A IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package C G ▼ RoHS Compliant

Contextual Info: Advanced Power Electronics Corp. AP30G100W-HF-3 N-Channel Insulated Gate Bipolar Power Transistor VCES 1000V High Speed Switching C Low Saturation Voltage 30A IC Typical V CE sat = 3.0V at IC=30A G Industry-standard TO-3P C C RoHS-compliant, halogen-free

transistor TO-3P Outline Dimensions

Contextual Info: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1000V 30A IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package C G G C ▼ RoHS Compliant

Contextual Info: Advanced Power Electronics Corp. AP30G120W-HF-3 N-Channel Insulated Gate Bipolar Power Transistor VCES 1200V High Speed Switching C Low Saturation Voltage 30A IC Typical VCE sat = 3.0V at IC=30A RoHS-compliant halogen-free TO-3P package G C C G E TO-3P E

Contextual Info: Advanced Power Electronics Corp. AP30G120SW-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching V CES 1200V Low Saturation Voltage C tab 30A IC Typical VCE(sat)= 3.0V at IC=30A G Internal "Co-Pak" Fast Recovery Diode C C RoHS-compliant, halogen-free TO-3P package

30G120ASW

Contextual Info: Advanced Power Electronics Corp. AP30G120ASW-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching V CES 1200V Low Saturation Voltage C tab 30A IC Typical VCE(sat)= 2.9V at IC=30A G Internal "Co-Pak" Fast Recovery Diode C C RoHS-compliant, halogen-free TO-3P package

Contextual Info: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features

BUZ11

Abstract: buz11 application note BUZ1 TB334 TA9771
Contextual Info: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features

AVALANCHE TRANSISTOR

Abstract: transistor irf250 5 pin relay 12v 30a IRF250 irf250 dc motor MOSFET IRF250 irf250 datasheet TB334 160V 30A TRANSISTOR
Contextual Info: IRF250 Data Sheet March 1999 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET • 30A, 200V Ordering Information IRF250 TO-204AE • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

TA9771

Abstract: BUZ11 TB334
Contextual Info: BUZ11 Semiconductor Data Sheet 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET October 1998 File Number 2253.1 Features • 30A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.040Ω (BUZ11 field effect transistor designed for applications such as

Contextual Info: if* ? S IRF250, IRF251, IRF252, IRF253 Semiconductor y y 25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 25A and 30A, 150V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate

TA9771

Contextual Info: BUZ11 Semiconductor Data Sheet June 1999 30A, 50 V, 0.040 Ohm, N-Channel Power MOSFET File Number 2253.2 Features • 30A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

HGTG30N120D2

Abstract: AN7254 AN7260 HGTG20N100D2 717 MOSFET
Contextual Info: HGTG30N120D2 S E M I C O N D U C T O R 30A, 1200V N-Channel IGBT April 1995 Features Package • 30A, 1200V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time - 580ns GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL

p30N06LE

Abstract: P30N06 RFP30N06LE MOSFET P30N06L 107E3 p30n0
Contextual Info: m HARRIS RFP30N06LE S E M I C O N D U C T O R 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFET MegaFET January 1994 Package Features TO-220AB • 30A.60V TOP VIEW • r DS(ON) - 0.047£2 • 2KV ESD Protected DRAIN

TA9771

Abstract: buz11
Contextual Info: intelai I BUZ11 Data S heet Ju n e 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET F ile N u m b e r 2253.2 Features • 30A, 50V This is an N-Channel enhancem ent mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

30a bipolar

Abstract: PVAPOX
Contextual Info: BIPOLAR TRANSISTORS Multi-epitaxial Mesa GLASS THERMAL OXIDE Al P-VAPOX N + P+ P N - N N+ Features Icm up to 30A Vceo up to 700V yvon1SEC3 More than 55 silicon lines Variety of package options

30N120D2

Contextual Info: m a r i a HGTG30N120D2 s 30A, 1200V N-Channel IGBT A p ril 1995 Features Package • 30A, 1200V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 580ns • High Input Impedance • Low Conduction Loss Description The H G T G 30 N 1 20 D 2 is a M O S g ate d high vo lta g e sw itch in g

Contextual Info: Product Overview NGTB30N60IHLWG: IGBT 600V 30A Induction Heating For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides