304 SOT23 Search Results

303 sot23

Abstract: 304 SOT23
Contextual Info: Central TM Semiconductor Corp. 303 R3 28-Mar 2001 SOT-23 CASE - MECHANICAL OUTLINE DATA SHEETS LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR 304 R3 ( 28-Mar 2001)

BFR 965

Abstract: mpsa 46 BAW 62 SOT23 4148 SOD-123 bc 544 BRF91A smd bf MPS 808 BC 241 BFS 505 SMD
Contextual Info: Cross Reference Conventional Devices to SMD Conventional Devices SMDPackages Conventional Devices SOD-123 SMDPackage Conventional Devices SOT-23 (cont’d) SMDPackage SOT-23 (cont’d) BA 282 BA 582 BB 304 BB 804 MPSA 05 SMBTA 05 BA 389 BA 585 BC 337 BC 817

MMBD3004BRM

Contextual Info: MMBD3004BRM SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE ARRAY This device features two series-connected diode pairs which can be connected to form a full-wave bridge. It is housed in a very small SOT23-6L surface mount package. SOT23-6L FEATURES 4 5 High Reverse Voltage Rating

smd transistor LY

Abstract: transistor smd 303 smd transistor 304
Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS84 FEATURES PINNING - SOT23 • Low threshold voltage PIN SYMBOL DESCRIPTION • Direct interface to C-MOS, TTL, etc. 1 • High-speed switching 2 g s gate

sot 326

Abstract: 338 sot-23 NE68530 NE02139
Contextual Info: Low Noise Bipolar Transistors ' *- i NHG* Vcc 1111UM HF K ’ TYP ÛA TYP VCE V M Ì I TEST Part TYP (dB) fr TYP la tu t Hfis TYP 1c F a im SURFACE MOUNT PLASTIC NE68018 2.0 6 5 ’ 1.8 10.0 6 10 9.5 10.0 100 35 (SOT-343) 18 7 1.2 13.5 8 20 15.0 9.0 100

NE68018

Contextual Info: Low Noise Bipolar Transistors i ir * J * k ji W ft •i íU fÁ A Vac S I P W W NF - fi* ' VtP t y p m tm VCE V) (Sm I* Ic TYP (mA) (dB) tr W tfce iiS lS 1 PÉ TtP «m SURFACE MOUNT PLASTIC Faxon PÄ M w SS Daratnd Doc No. NE68018 2.0 6 5 1.8 10.0 6 10

B204

Abstract: u101b transistor c114 RCR406 R221 CAPACITOR GUIDE SLOP224-2 tl431 sot23 texas SLOP-224-3 opamp applications schematics C408 diode
Contextual Info: Universal Operational Amplifier Evaluation Module With Shutdown User’s Guide 1998 Mixed-Signal Products SLVU009 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information

sod87 dimension

Abstract: BAV45 SOD80 sod80 dimension sod87 dimension datasheet SC59 SO20 MSB301 MSB302 BZA100
Contextual Info: SECTION 18 PACKING AND PACKING QUANTITIES contents page SCOPE 18 - 2 SURFACE-MOUNT DEVICES 18 - 2 Tape specification 18 - 2 Reel specification 18 - 7 Packing quantities 18 - 8 LEADED DEVICES Axial diodes 18 - 9 18 - 9 Tape specification 18 - 9 Reel specification

surface mount transistor A103

Abstract: TLV2271 slvd002 B204 u101b R409 U202 Voltage regulator R306 operational amplifier as summing amplifier r315
Contextual Info: Universal Operational Amplifier Evaluation Module User’s Guide March 1999 Mixed-Signal Products SLVU006A IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information

TLV2271

Abstract: R316 u101b SLVD002 Texas Instruments Power Supply TLV2771 b202 capacitors C104 C109 C111
Contextual Info: UNIVERSAL OPERATIONAL AMPLIFIER EVALUATION MODULE USER’S GUIDE Literature Number: SLVU006 May 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue

marking 1F7

Abstract: ZXTN04120HFF TS16949 ZXTP05120HFF ZXTP05120HFFTA
Contextual Info: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications

Contextual Info: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications

ot 409

Abstract: SOT 23 PD FH62U
Contextual Info: ૹ߅࢟വ! IC FH62 Positive Voltage RegulatorZ ᑵሶ࢟Ꮞᆮኹ໭ DESCRIPTION & FEATURES 概述及特點 The FH62 series is a group of positive voltage output, three-pin regulators. That provide a high current even when the input/output voltage differential is small.

DIODE SMD 10 25L

Abstract: 20L DIODE ZENER DIODE SMD 10 - 25L motorola smd diodes 1500w tvs diode SMD 20L SMD SOT-23 smc diodes motorola motorola diode smd 35v Diode zener smd 152 sot-23 st microelectronics smd zener
Contextual Info: ^ew7b .6 Edit/0 SMD DATA BOOK 1999 * • LO W V f SCHOTTKY IN SMA, SMB, SMC, DPAK CASE r e c t if ie r s With a forward voltage drop as low as .35V, these devices are well suited for battery powered, hand-held applications such as pagers, laptops, and cell phones.

aba diode

Contextual Info: Central" CMPD4150 semiconductor Corp. HIGH CURRENT HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4150 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package,

panasonic inverter dv 707 manual

Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
Contextual Info: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594

Contextual Info: SIEMENS Silicon Low Leakage Diode BAS 116 • Low-leakage applications • Medium speed switching times • Single diode Type Marking Ordering Code tape and reel BAS 116 JVs Q62702-A919 Pin Configuration Package1) SOT-23 i-o 3 o1-0

BB813

Abstract: TE sod323 d bb833
Contextual Info: Microwave, RF & Tuner Diodes Varactor Tuning D io d e s 1Type M a x im u m R a t in g 5 VRM BB 419 BB439 BB512 BB515 BB525 BB535 BB545 BB 619 B B 620 BB 639 BB 640 BB 804 BB811 BB813 BB 814 BB833 BBY 51 (Dual) BBY51-03W B B Y 52 (Dual) BBY52-03W ^or c o m P*ete p a c k a g e

LQFP-48 thermal pad

Abstract: exposed QFP 144 CQFP 240 QFP-128 20 x 14 pad exposed QFP 128 BGA-64 pad LQFP-64 thermal pad 2-CQFP SOT23-6 1152 BGA 144
Contextual Info: Thermal Characteristics of IC Assembly method for using this board is specified by the SEMI standard G38-87. These standards are available in the SEMI International Standards book, Volume 4, for packaging. INTRODUCTION The purpose of this document is to provide a centralized

Contextual Info: SENITRON INDUSTRIES LTD 43E D • 013766^ QQQ01SQ 0 H S L C B T - n - z 3 SERIES L Transient Voltage Suppressor ■ Glass Passivated Junction Voltage Range 6.5 to 90 Volts ■ 1.5kW Peak Pulse Power 1.0 Watt Steady State ■ Low Capacitance PEAK POWER DERATING CURVE

MA4T64500

Abstract: 4558 MA4T64535 557 sot143 micro X
Contextual Info: Silicon Low Noise Transistors Silicon Bipolar High fT Low Noise Microwave Transistors M A 4T64500 Series Features • fT to 9 GHz MA4T64535 Micro-X Low Noise Figure I •High Associated Gain ■Hermetic and Surface Mount Packages Available + ■Can be Screened to JANTX, JANTXV

marking SH SOT23

Abstract: smd marking 619 BB505B smd marking bb marking 12 SOD123 SOD-123 BB801 BB409 BA 811 SIEMENS marking
Contextual Info: SIEMENS AKTIEN 6E SEL LSCHAF 47E D 0235bDS OOebBST T « S I E G NF-Dioden / AF Diodes PIN Diodes Glass Package Type Max. ratine3s 1/r h mA V Marking Fig. nX 50 150 < 50 0.55 1 < 40 100 < 1 DO-35 DHD - 2 20 o 0.92 0.28 1 1 < 0.7 22 100 100 < 1 < 1.1 SOD-123

MARKING CODE 21S

Abstract: 12NA50
Contextual Info: Si-N Channel MOS FET Triode BF 543 P relim inary Data • For RF stages up to 300 MHz preferably in FM applications • loss = 4 mA, g s = 12 mS ESD:Electrostatic discharge sensitive device, observe handling precaution! Type Marking O rdering code (taped

Contextual Info: SEPIITRON INDUSTRIES LTP 43E P WM 013700^ □□□Qllfl 2 « S L C B T - \ 1- ^ 3 S E RI E S Transient Voltage Suppressor •Glass Passivated Junction Voltage Range 6.5 to 90 Volts ■1.5KW Peak Pulse Power Low Capacitance ■5W Steady State PEAK POWER DERATING CURVE